RD07MVS2

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 0.2+/-0.05 (0.22) (0.22) (0.25) RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION OUTLINE DRAWING RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. 6.0+/-0.15 This device have an interal monolithic zener diode from gate to source for ESD protection. 4.9+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1 1.0+/-0.05 2 FEATURES •High power gain: Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz •High Efficiency: 60%typ. (175MHz) •High Efficiency: 55%typ. (520MHz) •Integrated gate protection diode 3 (0.25) INDEX MARK (Gate) APPLICATION For output stage of high power amplifiers In VHF/UHF band mobile radio sets. 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm RoHS COMPLIANT RD07MVS2-101,T112 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) RD07MVS2 MITSUBISHI ELECTRIC 1/9 17 Jan. 2006 3.5+/-0.05 2.0+/-0.05 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 UNIT V V W W A °C °C °C/W RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Junction Temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω Junction to case RATINGS 30 -5/+10 50 1.5 3 150 -40 to +125 2.5 D G S SCHEMATIC DRAWING Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH Pout1 ηD1 Pout2 ηD2 PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=175MHz , VDD=7.2V Pin=0.3W,Idq=700mA f=520MHz , VDD=7.2V Pin=0.7W,Idq=750mA VDD=9.2V,Po=7W(Pin Control) f=175MHz,Idq=700mA,Zg=50Ω Load VSWR=20:1(All Phase) VDD=9.2V,Po=7W(Pin Control) f=520MHz,Idq=750mA,Zg=50Ω Load VSWR=20:1(All Phase) MIN 1.4 7 55 7 50 LIMITS TYP MAX. 200 1 1.7 2.4 8 60 8 55 No destroy UNIT uA uA V W % W % - Load VSWR tolerance No destroy - Note : Above parameters , ratings , limits and conditions are subject to change. RD07MVS2 MITSUBISHI ELECTRIC 2/9 17 Jan. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 Vgs-Ids CHARACTERISTICS 10.0 8.0 6.0 4.0 2.0 0.0 Ta=+25°C Vds=10V RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE *1:The m aterial of the PCB Glass epoxy (t=0.6 m m ) 60 CHANNEL DISSIPATION Pch(W) 50 40 30 20 10 0 On PCB(*1) 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) Ids(A) On PCB(*1) w ith Heat-sink 0 1 2 3 Vgs(V) 4 5 Vds-Ids CHARACTERISTICS 10 9 8 7 Ids(A) Vgs=4V Vgs=3.5V Ta=+25°C Vgs=4.5V Vgs=5V Vds VS. Ciss CHARACTERISTICS 160 140 120 Ciss(pF) 100 80 60 40 20 0 0 5 10 Vds(V) 15 20 Ta=+25°C f=1MHz 6 5 4 3 2 1 0 0 2 4 6 Vds(V) 8 10 Vgs=3V Vds VS. Coss CHARACTERISTICS 120 100 80 Coss(pF) Crss(pF) 60 40 20 0 0 5 10 Vds(V) 15 20 Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 20 18 16 14 12 10 8 6 4 2 0 0 5 10 Vds(V) 15 20 Ta=+25°C f=1MHz RD07MVS2 MITSUBISHI ELECTRIC 3/9 17 Jan. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 Pin-Po CHARACTERISTICS @f=175MHz 100 Po RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS @f=175MHz Ta=+25°C f=175MHz Vdd=7.2V Idq=700m A 12.0 Po(dBm) , Gp(dB) , Idd(A) 40 30 Gp Po 80 ηｄ 10.0 ηd Pout(W) , Idd(A) 80 ηd(%) 5 4 Idd 60 ηd(%) 40 20 Ｉｄｄ 8.0 6.0 4.0 Idd Ta=25°C f=175MHz Vdd=7.2V Idq=700m A 20 10 0 -5 0 5 10 15 20 Pin(dBm) 25 30 60 40 2.0 0.0 0 500 Pin(mW ) 20 1000 0 Pin-Po CHARACTERISTICS @f=520MHz Ta=+25°C f=520MHz Vdd=7.2V Idq=750m A Pin-Po CHARACTERISTICS @f=520MHz 14.0 100 90 Po Po(dBm) , Gp(dB) , Idd(A) 40 30 20 10 Po 80 60 ηd(%) 40 20 Ｉｄｄ 12.0 Pout(W) , Idd(A) 10.0 8.0 6.0 4.0 2.0 Idd ηｄ 80 Ta=25°C f=520MHz Vdd=7.2V Idq=750m A ηd Gp 60 50 40 30 0 0 5 10 15 20 Pin(dBm) 25 30 0 0.0 0.0 0.5 Pin(W ) 1.0 1.5 Vdd-Po CHARACTERISTICS @f=175MHz 30 25 20 Po(W) 15 10 5 0 4 6 8 10 Vdd(V) 12 14 Ta=25°C f=175MHz Pin=0.3W Icq=700m A Zg=ZI=50 ohm Po Vdd-Po CHARACTERISTICS @f=520MHz 6 5 4 Idd(A) 3 2 1 0 Po(W) 20 17.5 15 Idd Ta=25°C f=520MHz Pin=0.7W Icq=750m A Zg=ZI=50 ohm Po 10 7.5 5 2.5 0 4 6 8 10 Vdd(V) 12 14 0 2 1 RD07MVS2 MITSUBISHI ELECTRIC 4/9 Idd(A) 17 Jan. 2006 12.5 3 ηd(%) 70 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W TYPICAL CHARACTERISTICS V gs - Ids CHARACTERISTICS 2 10 8 6 Ids ( A) 4 2 0 2 3 Vgs ( V) 4 5 V ds =10V Tc =- 25~+75°C - 25°C +25°C +75°C RD07MVS2 MITSUBISHI ELECTRIC 5/9 17 Jan. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W TEST CIRCUIT(f=175MHz) V gg Vd d C1 W 19m m 4.7k O H M R F -in 19.5m m 24.5m m R D 07M VS 1 1 75M H z RD07MVS2 19m m W 22pF L C2 10u F ,50V 1m m 11.5m m 3m m 6 8O H M 6.5m m 28.5m m 3.5m m 11.5m m 10m m 5m m R F -o u t 62pF 16 pF 56pF 5m m 62pF 140pF 100pF 22pF 180p F L: E n am eled w ire 7 Tu rn s ,D :0 .43m m ,2.46m m O .D C 1 ,C 2:1000pF,0 .022u F in p a ra llel N o te :B o a rd m ate rial- T e f lo n s u b s trate M icro strip lin e w idth= 2.2m m /50O H M ,e r:2.7,t= 0.8m m W :line w idth = 1.0m m TEST CIRCUIT(f=520MHz) V gg Vdd C1 W 19 m m 4.7kO H M RF -in 46m m 6 8pF 37pF 10p F 20 pF 6pF 18p F 9m m R D 0 7 MV S 1 5 2 0M H z 3.5m m 3.5m m 3.5m m RD07MVS2 20 pF 19m m W L C2 10u F ,5 0 V 6.5m m 6.5m m 44 .5 m m RF -o u t 68 pF L: E n a m e led w ire 5 T u rn s ,D :0 .4 3m m ,2.46 m m O .D C 1 ,C 2:1000 pF ,0 .0 2 2 u F in p a ra lle l N o te :B o a rd m a te ria l- T e f lo n s u b s tra te M ic ro s trip lin e w id th = 2 .2 m m /5 0 O H M ,e r:2 .7 ,t= 0 .8 m m W :in e w idth = 1.0m m RD07MVS2 MITSUBISHI ELECTRIC 6/9 17 Jan. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS 175MHz Zin* Zout* Zo=10Ω Vdd=7.2V, Idq=700mA(Vgg adj.),Pin=0.28W Zin*=1.55+j5.53 Zout*=3.24-j0.26 175MHz Zin* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance 175MHz Zout* 520MHz Zin* Zout* Zo=10Ω Vdd=7.2V, Idq=750mA(Vgg adj.),Pin=0.7W Zin*=0.76+j0.06 Zout*=1.61-j0.52 520MHz Zin* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of input impedance 520MHz Zout* RD07MVS2 MITSUBISHI ELECTRIC 7/9 17 Jan. 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 S12 S22 (ang) -9.4 -17.0 -18.8 -22.7 -28.8 -32.8 -37.7 -39.8 -38.9 -40.4 -43.4 -41.3 -52.0 -45.6 -52.8 -58.3 -53.1 -51.4 -52.0 -40.6 -21.3 -44.2 -13.4 (mag) 0.792 0.790 0.799 0.823 0.829 0.842 0.866 0.864 0.887 0.896 0.895 0.901 0.916 0.914 0.925 0.929 0.927 0.937 0.931 0.937 0.942 0.941 0.943 (ang) -173.5 -175.1 -174.8 -174.7 -175.4 -175.7 -176.3 -176.5 -177.3 -177.8 -177.8 -178.3 -179.4 -179.4 179.7 179.3 178.9 178.2 178.2 177.4 177.4 177.2 176.7 (mag) 0.015 0.015 0.014 0.015 0.014 0.012 0.012 0.011 0.010 0.009 0.008 0.008 0.007 0.007 0.006 0.004 0.005 0.004 0.003 0.003 0.002 0.001 0.002 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W RD07MSV2 S-PARAMETER DATA (@Vdd=7.2V, Id=750mA) Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 S11 (mag) 0.899 0.903 0.903 0.909 0.911 0.919 0.923 0.927 0.931 0.934 0.939 0.940 0.942 0.944 0.948 0.948 0.950 0.953 0.951 0.954 0.954 0.956 0.956 (ang) -175.3 -177.2 -177.7 -178.4 -179.0 -179.6 179.7 178.9 178.5 177.8 177.6 177.3 176.8 176.2 175.6 175.4 174.7 174.3 174.1 173.5 173.2 172.9 172.7 (mag) 5.567 3.576 3.002 2.602 1.987 1.585 1.291 1.062 0.902 0.749 0.715 0.656 0.576 0.502 0.437 0.393 0.344 0.303 0.279 0.243 0.236 0.201 0.193 S21 (ang) 79.3 71.1 68.3 65.1 58.3 53.4 47.9 43.4 39.1 35.7 33.6 31.6 29.9 26.0 24.4 21.7 18.8 17.0 15.1 12.6 10.9 12.4 9.8 RD07MSV2 S-PARAMETER DATA (@Vdd=12.5V, Id=750mA) Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 520 550 600 650 700 750 800 850 900 950 1000 1050 1100 RD07MVS2 S11 (mag) 0.897 0.899 0.904 0.906 0.910 0.919 0.926 0.929 0.936 0.937 0.939 0.943 0.942 0.947 0.949 0.949 0.951 0.955 0.956 0.953 0.955 0.956 0.955 (ang) -173.6 -176.0 -176.8 -177.3 -178.3 -179.0 -179.9 179.3 178.6 177.9 177.6 177.2 176.6 176.0 175.5 175.1 174.4 174.0 173.7 173.1 172.8 172.5 172.1 (mag) 5.995 3.832 3.224 2.776 2.100 1.662 1.356 1.107 0.925 0.788 0.732 0.668 0.582 0.505 0.444 0.380 0.347 0.314 0.283 0.252 0.234 0.212 0.187 S21 (ang) 78.6 69.8 66.6 62.8 56.4 50.8 45.0 40.4 36.5 31.8 30.8 28.9 26.1 22.2 20.9 17.8 14.6 15.7 11.8 11.8 7.8 8.5 4.0 (mag) 0.016 0.016 0.016 0.015 0.013 0.013 0.011 0.011 0.010 0.009 0.008 0.008 0.006 0.006 0.005 0.005 0.003 0.003 0.003 0.002 0.003 0.002 0.001 S12 (ang) -8.7 -15.9 -21.2 -22.5 -28.7 -30.5 -37.5 -44.2 -44.4 -49.0 -52.4 -55.9 -51.8 -59.2 -52.6 -58.1 -50.6 -51.6 -80.2 -53.3 -67.0 -30.6 15.8 (mag) 0.763 0.764 0.778 0.800 0.813 0.826 0.853 0.860 0.879 0.891 0.893 0.897 0.911 0.913 0.922 0.923 0.929 0.934 0.934 0.939 0.943 0.940 0.943 S22 (ang) -172.0 -173.3 -173.5 -173.2 -173.2 -174.1 -174.6 -175.0 -175.9 -176.5 -176.6 -177.3 -178.1 -178.6 -179.3 -179.8 179.9 179.1 179.0 178.1 178.0 177.8 177.2 17 Jan. 2006 MITSUBISHI ELECTRIC 8/9 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RD07MVS2 MITSUBISHI ELECTRIC 9/9 17 Jan. 2006