RD100HHF1_10

Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applications. 4-C2 24.0+/-0.6 FEATURES High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band 2 10.0+/-0.3 9.6+/-0.3 3 R1.6+/-0.15 0.1 -0.01 4.5+/-0.7 6.2+/-0.7 +0.05 APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. 5.0+/-0.3 18.5+/-0.3 RoHS COMPLIANT RD100HHF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω junction to case RATINGS 50 +/-20 176.5 12.5 25 175 -40 to +175 0.85 UNIT V V W W A °C °C °C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH Pout ηD PARAMETER Zerogate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=30MHz ,VDD=12.5V Pin=7W, Idq=1.0A VDD=15.2V,Po=100W(Pin Control) f=30MHz,Idq=1.0A,Zg=50Ω Load VSWR=20:1(All Phase) LIMITS MIN TYP MAX. 10 1 1.5 4.5 100 110 55 60 No destroy UNIT uA uA V W % - Note : Above parameters , ratings , limits and conditions are subject to change. RD100HHF1 3.3+/-0.2 17 Aug 2010 1/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Vgs-Ids CHARACTERISTICS 10 Ta=+25°C Vds=10V RoHS Compliance, TYPICAL CHARACTERISTICS 200 CHANNEL DISSIPATION Pch(W) ... 160 120 80 40 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) CHANNEL DISSIPATION VS. AMBIENT TEMPERATURE Silicon MOSFET Power Transistor 30MHz,100W 8 6 4 2 0 0 1 2 3 4 Vgs(V) 5 6 7 Vds-Ids CHARACTERISTICS 10 Ta=+25°C Vgs=6V Ids(A) Vds VS. Ciss CHARACTERISTICS 300 250 200 Ta=+25°C f=1MHz 8 6 Ids(A) Vgs=5.7V Vgs=5.4V Ciss(pF) 150 100 4 2 Vgs=5.1V Vgs=4.8V 50 Vgs=4.5V Vgs=4.2V 0 0 2 4 6 Vds(V) 8 10 0 0 10 Vds(V) 20 30 Vds VS. Coss CHARACTERISTICS 500 400 300 200 100 0 0 10 Vds(V) 20 30 Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 40 Ta=+25°C f=1MHz 30 Crss(pF) Coss(pF) 20 10 0 0 10 Vds(V) 20 30 RD100HHF1 17 Aug 2010 2/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Pin-Po CHARACTERISTICS RoHS Compliance, TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 50 Po(dBm) , Gp(dB) , Idd(A) 40 30 20 10 Ｉｄｄ Ta=+25°C f=30MHz Vdd=12.5V Idq=1A Silicon MOSFET Power Transistor 30MHz,100W 120 Po 80 Po ηd 100 Pout(W) , Idd(A) 80 ηｄ 100 80 60 40 20 0 0 2 70 60 50 Ta=25°C f=30MHz Vdd=12.5V Idq=1A Gp 60 40 20 0 ηd(%) 40 30 20 Idd 0 0 10 20 30 Pin(dBm) 40 4 6 Pin(W) 8 10 Vdd-Po CHARACTERISTICS 140 120 100 Po(W) 80 60 40 20 0 4 6 8 10 Vdd(V) 12 14 Ta=25°C f=30MHz Pin=7W Idq=1A Zg=ZI=50 ohm Po Vgs-Ids CHARACTERISTICS 2 +25°C 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10 8 6 4 2 0 0 1 2 3 4 Vgs(V) 5 6 7 +75°C -25°C Vds=10V Tc=-25~+75°C Idd(A) Idd RD100HHF1 Ids(A) ηd(%) 17 Aug 2010 3/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W TEST CIRCUIT(f=30MHz) Vgg Vdd 330uF,50V C1 L2 C1 220pF 20pF C1 L3 Pin 1000pF 4.7 OHM 180pF 82pF 220pF 20pF 200pF 82pF 82/330/82pF L4 1000pF Pout 9.1K OHM 10uF,50V 180/200pF 4.7K OHM L1 82/82pF C1 82/330/82pF 19 30 68 75 90 93 100 4.5 18 21 24 43 50 53 56 93 100 12 8 C1:100pF, 0.022uF, 0.1uF in parallel 14 L1:8Turns,I.D8mm,D1.6mm silver plateted copper wire L2:10Turns,I.D8mm,D1.6mm silver plateted copper wire L3:5Turns,I.D6mm,D0.7mm copper wire P=1mm L4:1Turns,I.D10mm,D1.6mm silver plateted copper wire Dimensions:mm Note:Board material-teflon substrate micro strip line width=4.2mm / 50 OHM,er:2.7,t=1.6mm RD100HHF1 17 Aug 2010 4/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS Zo=10Ω f=30MHz Zout f=30MHz Zin Zin , Zout f (MHz) 30 Zin (ohm) 8.86-j14.31 Zout (ohm) 0.64-j0.01 Conditions Po=115W, Vdd=12.5V,Pin=7W RD100HHF1 17 Aug 2010 5/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 S12 (mag) 0.014 0.014 0.012 0.012 0.009 0.007 0.006 0.005 0.003 0.003 0.004 0.003 0.004 0.005 0.003 0.006 0.007 0.005 0.007 0.008 0.008 0.011 (ang) 5.2 -9.9 -20.7 -34.1 -27.8 -36.9 -54.4 -30.4 13.1 -18.0 45.3 42.3 78.6 80.1 72.0 61.3 67.2 82.2 78.7 69.9 86.8 78.7 (mag) 0.770 0.764 0.786 0.842 0.880 0.908 0.946 0.941 0.952 0.974 0.963 0.971 0.975 0.965 0.972 0.973 0.964 0.974 0.969 0.973 0.973 0.971 S22 (ang) -162.1 -171.6 -171.4 -171.4 -173.6 -174.3 -176.2 -177.4 -178.3 -179.8 179.6 178.6 177.5 176.8 176.0 175.1 174.9 173.9 173.3 172.6 171.5 171.7 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W RD100HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=800mA) Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 (mag) 0.835 0.839 0.849 0.886 0.915 0.932 0.945 0.951 0.958 0.960 0.964 0.966 0.970 0.967 0.971 0.970 0.969 0.970 0.976 0.973 0.973 0.977 (ang) -158.6 -171.1 -172.9 -173.9 -175.1 -176.4 -177.3 -178.2 -179.3 -179.8 179.5 178.7 178.2 177.5 177.0 176.5 175.6 175.2 174.5 173.9 173.2 172.6 S21 (mag) (ang) 31.451 94.8 10.628 79.3 6.212 71.0 2.749 54.1 1.541 40.2 0.972 31.6 0.671 24.5 0.481 20.1 0.365 15.2 0.291 13.4 0.243 8.5 0.195 6.8 0.154 5.2 0.133 4.8 0.119 1.0 0.109 -1.3 0.092 0.6 0.080 -4.0 0.073 -1.9 0.067 -5.4 0.058 4.1 0.049 -8.7 RD100HHF1 17 Aug 2010 6/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2. RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. RD100HHF1 17 Aug 2010 7/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W Keep safety first in your circuit designs ! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these - These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. - Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. - All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. 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Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. - The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. - If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. - Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. RD100HHF1 17 Aug 2010 8/8