RD12MVP1_10

Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVP1 (a) 0.2+/-0.05 0.65+/-0.2 (c) (b) 7.0+/-0.2 (b) 8.0+/-0.2 6.2+/-0.2 (d) 5.6+/-0.2 4.2+/-0.2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W DESCRIPTION RD12MVP1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. OUTLINE DRAWING FEATURES •High Power Gain Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz •High Efficiency: 55%min. (175MHz) •No gate protection diode INDEX MARK [Gate] (3.6) (4.5) 0.95+/-0.2 2.6+/-0.2 TOP VIEW DETAIL A SIDE VIEW 1.8+/-0.1 BOTTOM VIEW Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source For output stage of high power amplifiers in VHF band mobile radio sets. SIDE VIEW Standoff = max 0.05 APPLICATION 0.7+/-0.1 UNIT:mm DETAIL A NOTES: 1. ( ) Typical value RoHS COMPLIANT RD12MVP1 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS ID Pin Pch Tj Tstg Rthj-c PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Channel Dissipation Junction Temperature Storage Temperature Thermal Resistance CONDITIONS VGS=0V VDS=0V Zg=Zl=50Ω Tc=25°C RATINGS 50 -5 to +20 4.0 1.0 125 +150 -40 to +125 1.5 UNIT V V A W W °C °C °C/W Junction to Case Note: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH Pout ηD PARAMETER Zero Gate Voltage Drain Current Gate to Source Leak Current Gate Threshold Voltage Output Power Drain Efficiency CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=175MHz,VDD=7.2V Pin=0.5W,Idq=1.0A VDD=9.5V,Po=10W(Pin Control) f=175MHz,Idq=1.0A,Zg=50Ω Load VSWR=20:1(All Phase) LIMITS MIN. TYP. MAX. 10 1.0 1.8 4.4 10 12 55 57 No destroy UNIT uA uA V W % - VSWRT Load VSWR tolerance Note: Above parameters, ratings, limits and conditions are subject to change. RD12MVP1 17 Aug 2010 1/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVP1 Vgs-Ids CHARACTERISTICS Ta=+25°C Vds=10V Ids RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W TYPICAL CHARACTERISTICS 60 CHANNEL DISSIPATION Pch(W) ,,, 50 40 30 20 10 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta(deg:C.) 200 Free Air On PCB with Termal sheet and Heat-sink (Size : 41 x 55mm, t=7.2 mm) CHANNEL DISSIPATION VS. AMBIENT TEMPERATURE *PCB: Glass epoxy (Size : 46.4 x 40.0mm, t=0.8 mm) Thermal sheet: GELTEC COOH-4000(t=0.5mm) 7 6 5 Ids(A) 4 3 2 1 0 0 1 2 3 4 Vgs(V) 5 6 7 Vds-Ids CHARACTERISTICS 9 Ta=+25°C Vds VS. Ciss CHARACTERISTICS 160 Vgs=7.5V Ta=+25°C f=1MHz 8 7 6 Ids(A) 5 4 3 2 1 0 0 1 2 3 4 5 Vds(V) 6 7 8 9 140 120 Vgs=6.5V Ciss(pF) 100 80 60 40 20 0 0 5 10 Vds(V) 15 20 Vgs=5.5V Vgs=4.5V Vds VS. Coss CHARACTERISTICS 160 140 120 Coss(pF) Crss(pF) 100 80 60 40 20 0 0 5 10 Vds(V) 15 20 Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 20 18 16 14 12 10 8 6 4 2 0 0 5 10 Vds(V) 15 20 Ta=+25°C f=1MHz RD12MVP1 17 Aug 2010 2/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVP1 Pin-Po CHARACTERISTICS @f=175MHz RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS @f=175MHz 14 40 Po(dBm) , Gp(dB) , Idd(A) Ta=+25°C f=175MHz Vdd=7.2V Idq=1.0A Po 90 Po 80 12 Pout(W) , Idd(A) 10 8 6 4 2 80 70 ηd(%) ηd Ta=25°C f=175MHz Vdd=7.2V Idq=1.0A Idd 30 ηｄ Gp 60 ηd(%) 60 50 40 30 20 1.5 20 40 10 Ｉｄｄ 20 0 0 5 10 15 20 Pin(dBm) 25 30 0 0 0.0 0.5 Pin(W) 1.0 Vdd-Po CHARACTERISTICS @f=175MHz 30 Ta=25°C f=175MHz Pin=0.6W Idq=1.0A Zg=ZI=50 ohm Po 6 25 20 5 Idd Po(W) 15 10 3 2 5 4 6 8 Vdd(V) 10 12 1 RD12MVP1 Idd(A) 4 17 Aug 2010 3/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W TEST CIRCUIT (f=175MHz) Vgg Vdd C1 W 19mm 19mm W RD12MVP1 175MHz L2 4.7k Ohm 9.5mm L1 100pF C2 22uF,50V RF-in 330pF 47pF 17mm 3.5mm 47pF 14mm RF-out 330pF 3mm 9.5mm 3mm 24pF 9mm 54pF Note:Board material= glass-Epoxy Substrate Micro strip line width=1.3mm/50OHM,er=4.8,t=0.8mm W:Line width=1.0mm L1:10.8nH,4Turns,D:0.43mm,1.66mm(outside diameter) L2:43.7nH,6Turns,D:0.43mm,2.46mm(outside diameter) C1,C2:2200pF RD12MVP1 17 Aug 2010 4/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W RD12MVP1 S-PARAMETER DATA (@Vdd=7.2V, Id=500mA) Freq. [MHz] 100 125 150 175 200 225 250 275 300 325 350 375 400 425 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800 825 850 875 900 925 950 975 1000 S11 (mag) 0.782 0.801 0.817 0.833 0.847 0.860 0.872 0.882 0.894 0.901 0.910 0.917 0.918 0.923 0.930 0.933 0.938 0.939 0.942 0.943 0.946 0.950 0.950 0.953 0.952 0.954 0.955 0.954 0.955 0.958 0.958 0.956 0.958 0.956 0.958 0.957 0.959 (ang) -165.5 -166.9 -168.0 -168.8 -169.7 -170.6 -171.6 -172.4 -173.0 -173.5 -174.2 -175.2 -176.1 -176.7 -177.2 -177.7 -178.1 -178.8 -179.3 179.7 179.5 179.1 178.8 178.3 177.9 177.5 176.9 176.4 176.3 175.9 175.6 175.1 174.5 174.3 174.0 173.8 173.6 (mag) 6.105 4.716 3.724 3.023 2.519 2.137 1.828 1.569 1.361 1.193 1.062 0.947 0.844 0.756 0.683 0.623 0.568 0.520 0.477 0.439 0.407 0.378 0.350 0.327 0.306 0.286 0.268 0.252 0.238 0.225 0.213 0.203 0.192 0.182 0.175 0.166 0.158 S21 (ang) 69.0 62.4 56.4 51.6 47.5 43.5 39.6 36.0 33.4 31.0 28.5 25.9 23.5 21.5 20.4 18.7 17.2 15.7 14.3 13.3 12.2 11.3 10.4 9.8 8.9 8.3 7.7 7.2 7.0 6.4 5.9 5.5 5.3 5.3 5.3 5.2 5.7 (mag) 0.024 0.022 0.021 0.019 0.016 0.015 0.013 0.012 0.010 0.008 0.007 0.006 0.005 0.004 0.005 0.005 0.006 0.007 0.008 0.009 0.011 0.011 0.012 0.013 0.014 0.015 0.016 0.018 0.018 0.020 0.021 0.022 0.023 0.024 0.025 0.026 0.026 S12 (ang) -16.8 -20.5 -25.7 -27.3 -31.1 -30.0 -34.0 -30.9 -31.7 -24.1 -20.9 -13.8 -1.5 16.0 35.4 43.3 53.6 58.5 63.6 68.8 73.9 72.4 74.8 79.1 77.0 77.2 79.2 78.9 79.9 78.9 80.1 79.0 79.6 79.3 78.3 80.7 78.8 (mag) 0.743 0.766 0.783 0.799 0.825 0.845 0.864 0.871 0.879 0.888 0.901 0.915 0.918 0.917 0.922 0.928 0.935 0.943 0.941 0.941 0.945 0.949 0.950 0.952 0.954 0.951 0.955 0.957 0.958 0.961 0.954 0.960 0.958 0.962 0.964 0.964 0.962 S22 (ang) -162.7 -164.0 -165.6 -166.4 -167.2 -167.7 -168.6 -169.6 -170.4 -171.3 -172.1 -172.9 -173.6 -174.4 -174.8 -175.5 -176.3 -176.8 -177.1 -177.8 -178.3 -178.9 -179.5 -179.8 179.8 179.4 178.9 178.6 178.1 177.7 177.5 177.3 176.8 176.4 176.0 176.0 175.8 RD12MVP1 17 Aug 2010 5/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W RD12MVP1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA) Freq. [MHz] 100 125 150 175 200 225 250 275 300 325 350 375 400 425 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800 825 850 875 900 925 950 975 1000 S11 (mag) 0.799 0.813 0.825 0.835 0.846 0.857 0.868 0.877 0.886 0.895 0.900 0.907 0.909 0.913 0.921 0.925 0.932 0.931 0.933 0.937 0.943 0.943 0.946 0.947 0.946 0.951 0.949 0.951 0.950 0.956 0.956 0.956 0.953 0.948 0.955 0.955 0.957 (ang) -169.4 -170.7 -171.3 -171.9 -172.5 -173.4 -174.3 -174.9 -175.3 -175.7 -176.4 -177.3 -178.1 -178.7 -179.1 -179.6 -180.0 179.2 178.6 178.0 177.7 177.3 177.0 176.6 175.9 175.5 175.0 174.7 174.5 174.3 173.7 173.3 172.8 172.5 172.2 172.0 171.8 (mag) 5.980 4.690 3.726 3.045 2.569 2.206 1.904 1.648 1.436 1.270 1.141 1.023 0.917 0.820 0.745 0.683 0.627 0.575 0.529 0.486 0.452 0.422 0.391 0.366 0.341 0.322 0.302 0.284 0.269 0.253 0.240 0.228 0.218 0.206 0.196 0.186 0.178 S21 (ang) 72.2 65.9 60.1 55.9 52.3 48.4 44.3 40.7 38.2 35.8 33.1 30.4 27.7 25.8 24.6 23.0 21.2 19.4 18.1 16.6 16.1 14.9 14.0 12.7 12.0 11.3 10.5 9.6 9.3 9.2 8.7 7.9 7.1 6.6 7.0 7.3 7.1 (mag) 0.021 0.020 0.019 0.017 0.016 0.015 0.013 0.011 0.010 0.009 0.008 0.007 0.007 0.005 0.006 0.006 0.007 0.007 0.008 0.009 0.010 0.011 0.013 0.013 0.015 0.015 0.016 0.017 0.019 0.020 0.020 0.021 0.023 0.024 0.024 0.025 0.026 S12 (ang) -11.2 -14.9 -17.2 -21.5 -22.4 -21.1 -21.2 -21.3 -19.9 -15.8 -11.9 -7.2 1.3 20.2 27.4 36.9 50.8 53.6 57.3 67.9 70.4 70.9 73.8 75.6 76.9 75.8 76.4 77.8 79.0 77.8 78.7 78.7 77.3 76.8 78.3 78.6 79.1 (mag) 0.757 0.780 0.785 0.794 0.821 0.846 0.863 0.864 0.864 0.876 0.891 0.906 0.915 0.908 0.910 0.921 0.933 0.937 0.935 0.931 0.935 0.945 0.948 0.946 0.946 0.945 0.949 0.952 0.955 0.954 0.950 0.952 0.953 0.958 0.959 0.958 0.956 S22 (ang) -166.6 -167.5 -168.8 -169.3 -169.3 -169.5 -170.4 -170.9 -171.4 -172.0 -172.6 -173.1 -173.9 -174.4 -174.5 -175.2 -175.9 -176.6 -176.8 -177.0 -177.4 -178.0 -178.6 -179.0 -179.3 -179.6 179.9 179.4 179.0 178.9 178.9 178.4 177.9 177.4 177.3 177.4 177.1 RD12MVP1 17 Aug 2010 6/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2. RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. RD12MVP1 17 Aug 2010 7/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVP1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W Keep safety first in your circuit designs ! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. - The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. - If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. - Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. RD12MVP1 17 Aug 2010 8/8