RD12MVS1

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVS1 0.2+/-0.05 (0.22) RoHS Compliance, DESCRIPTION RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1 4.9+/-0.15 1.0+/-0.05 2 High Power Gain: Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz High Efficiency: 57%typ. (175MHz) 3 INDEX MARK (Gate) (0.22) (0.25) (0.25) APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm RoHS COMPLIANT RD12MVS1-101,T112 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead older alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS ID Pin Pch Tj Tstg Rthj-c PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Channel Dissipation Junction Temperature Storage Temperature Thermal Resistance CONDITIONS VGS=0V VDS=0V Zg=Zl=50Ω Tc=25°C RATINGS 50 +/- 20 4 2 50 150 -40 to +125 2.5 UNIT V V A W W °C °C °C/W Junction to Case Note: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH Pout ηD PARAMETER Zero Gate Voltage Drain Current Gate to Source Leak Current Gate Threshold Voltage Output Power Drain Efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=175MHz,VDD=7.2V Pin=1.0W,Idq=1.0A VDD=9.2V,Po=12W(Pin Control) f=175MHz,Idq=1.0A,Zg=50Ω Load VSWR=20:1(All Phase) MIN. 1. 8 11.5 55 LIMITS TYP. MAX. 10 1 4.4 12 57 Not destroy UNIT uA uA V W % - Note: Above parameters, ratings, limits and conditions are subject to change. RD12MVS1 MITSUBISHI ELECTRIC 1/7 10 Jan 2006 2.0+/-0.05 FEATURES 3.5+/-0.05 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVS1 V gs -Ids CHARACTERIST ICS Ta= + 25°C Vds= 10V RoHS Compliance, TYPICAL CHARACTERISTICS 60 CHANNEL DISSIPAT IO N Pc h(W) 50 40 On PCB( *1) with Heat-sink Silicon MOSFET Power Transistor, 175MHz, 12W DRAIN DISSIPATION V S. AM BIENT T EM PERATURE *1:The mater ial of the PCB Glass epoxy ( t= 0.6 mm) 10 8 Ids ( A),G M( S) 6 4 GM Ids 30 20 10 0 0 40 80 120 160 A MBIENT TEMPERA TURE Ta(°C) 200 On PCB( *1) 2 0 0 1 2 3 4 Vgs (V ) 5 6 7 V ds -Ids CHARACT ERIST ICS 9 Ta= + 25°C V ds V S. Cis s CHARACT ERIST ICS 160 Vg s= 7.5V Ta= + 25°C f= 1M Hz 8 7 140 120 Cis s (pF) 100 80 60 40 20 0 Vg s= 6.0V 6 Ids (A) 5 4 3 2 1 0 0 2 4 6 Vds ( V ) 8 10 Vg s= 5.5V Vg s= 5.0V Vg s= 4.5V Vg s= 4.0V Vg s= 3.5V 0 5 10 Vds (V ) 15 20 V ds V S. Cos s CHARACTERIST ICS 120 100 80 Coss( pF) Cr ss(pF) 60 40 20 0 0 5 10 Vds (V ) 15 20 Ta= + 25°C f= 1M Hz V ds V S. Cr s s CHARACTERIST ICS 20 18 16 14 12 10 8 6 4 2 0 0 5 10 Vds (V) 15 20 Ta= + 25°C f= 1M Hz RD12MVS1 MITSUBISHI ELECTRIC 2/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVS1 Pin- Po CHARACTERISTICS @f =175M Hz 90 Po Ta= 25°C f= 175M Hz Vdd= 7.2V Idq = 1.0A RoHS Compliance, TYPICAL CHARACTERISTICS Pin- Po CHARACTERISTICS @f =175M Hz Silicon MOSFET Power Transistor, 175MHz, 12W 14 40 Po(dBm) , G p(dB) , Idd( A) Ta= + 25°C f= 175M Hz Vdd= 7.2V Idq = 1.0A Po 80 ηｄ Gp 12 Pout( W) , Idd( A) 10 8 6 4 2 80 70 ηd( %) 10 Jan 2006 30 60 ηd( %) ηd 60 50 Idd 20 40 10 Ｉｄｄ 20 40 30 20 1000 0 -5 0 5 10 15 Pin( dBm) 20 25 30 0 0 0 200 400 600 Pin( mW) 800 V dd- Po CHARACTERISTICS @f =175M Hz 25 20 15 Po( W) Ta= 25°C f= 175M Hz Pin= 0.3W Icq = 700mA Zg = ZI= 50 ohm Po V gs - Ids CHARACTORISTICS 2 5 4 8 V ds =10V Tc =- 25~+75°C 6 Ids ( A) ,G M( S) +25°C - 25°C +75°C Idd 3 Idd( A) 4 10 5 0 4 6 8 V dd( V ) 10 12 2 1 0 2 0 0 2 4 Vgs ( V) 6 8 RD12MVS1 MITSUBISHI ELECTRIC 3/7 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVS1 Vdd C2 C3 RoHS Compliance, TEST CIRCUIT (f=175MHz) Vgg Silicon MOSFET Power Transistor, 175MHz, 12W C1 W 47pF RF-in 35mm 3mm L1 10.8nH W Contact 3.5mm Contact 3.5mm 6.0mm 5.0mm L2 43.7nH 4.7kΩ 33pF RF-out 25mm 330pF 68pF 330pF 4mm 15pF 12mm RD12MVS1 24pF 20mm 100pF Note: Board material - Teflon substrate L: Enameled wire Micro strip line width=2.2mm/50,εr:2.7,t=0.8mm L1:4Turns,D:0.43mm,φ1.66mm(outside diameter) W: line width=1.0mm L2:6Turns,D:0.43mm,φ2.46mm(outside diameter)    Chip Condencer :GRM40 C1, C2: 1000pF Copper board spring t=0.1mm C3: 10uF, 50V INPUT / OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS 175MHz Zin* Zout* Zo=50Ω Vdd=7.2V, Idq=1.0A(Vgg adj.), Pin=1.0W f=175MHz Zout* Zin*=0.965-j7.73 Zout*=1.73-j1.14 f=175MHz Zin* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of output impedance RD12MVS1 MITSUBISHI ELECTRIC 4/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVS1 S12 (mag) 0.018 0.016 0.016 0.016 0.016 0.015 0.016 0.012 0.014 0.013 0.012 0.012 0.014 0.012 0.009 0.009 0.009 0.004 0.008 0.007 0.005 0.006 0.004 0.003 0.003 0.003 0.003 0.002 0.004 0.001 0.004 0.002 0.003 0.003 0.006 0.003 0.007 0.006 0.003 0.003 (ang) -3.3 1.4 -10.9 -14.1 -18.2 -18.3 -15.1 -30.4 -29.9 -24.5 -39.4 -53.1 -32.9 -32.2 -29.2 -21.6 -32.5 -37.2 -25.9 -21.3 -46.6 -25.0 -40.9 -33.6 17.7 25.4 51.4 5.7 5.6 -16.1 58.8 -6.7 40.4 77.0 46.5 64.5 60.3 69.7 80.3 86.7 (mag) 0.761 0.765 0.778 0.787 0.800 0.796 0.810 0.836 0.858 0.855 0.859 0.860 0.886 0.898 0.898 0.893 0.903 0.910 0.917 0.925 0.922 0.922 0.939 0.939 0.938 0.930 0.932 0.946 0.949 0.940 0.935 0.943 0.945 0.948 0.946 0.950 0.946 0.952 0.959 0.950 S22 (ang) -160.3 -168.1 -170.7 -170.3 -171.7 -172.3 -172.3 -172.2 -172.2 -173.0 -173.3 -173.4 -174.5 -174.6 -175.0 -175.6 -175.7 -176.6 -176.8 -177.3 -177.6 -177.6 -178.0 -178.9 -179.3 -179.5 -179.9 -179.9 179.3 179.0 178.8 178.2 177.5 176.8 176.7 176.7 176.0 175.7 175.0 174.8 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W RD12MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA) Freq. [MHz] 25 50 75 100 125 150 175 200 225 250 275 300 325 350 375 400 425 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800 825 850 875 900 925 950 975 1000 S11 (mag) 0.824 0.816 0.817 0.829 0.837 0.845 0.852 0.860 0.870 0.876 0.886 0.891 0.902 0.903 0.909 0.907 0.912 0.923 0.928 0.934 0.932 0.936 0.932 0.935 0.939 0.939 0.943 0.945 0.943 0.939 0.943 0.948 0.951 0.953 0.952 0.954 0.944 0.951 0.954 0.955 (ang) -159.3 -169.0 -171.7 -172.8 -173.4 -173.9 -174.0 -174.3 -175.0 -175.0 -175.6 -175.8 -175.9 -176.2 -176.7 -177.6 -177.9 -178.3 -178.5 -178.6 -178.8 -179.2 179.6 179.1 179.2 179.4 179.1 178.7 177.5 177.2 176.9 176.8 177.1 176.7 176.1 175.4 174.4 174.6 175.0 175.0 S21 (mag) (ang) 26.397 93.4 13.193 85.2 8.716 79.3 6.537 74.5 5.110 68.5 4.117 64.2 3.402 60.8 2.896 57.2 2.525 53.2 2.175 48.9 1.897 46.5 1.675 43.6 1.496 41.0 1.348 38.3 1.208 35.7 1.087 33.7 0.996 31.6 0.912 29.7 0.836 27.9 0.748 25.8 0.707 23.6 0.647 23.2 0.591 20.8 0.562 20.0 0.520 17.4 0.485 15.5 0.460 15.6 0.435 15.5 0.407 13.3 0.380 12.2 0.358 10.8 0.327 8.6 0.308 8.0 0.314 8.5 0.284 7.0 0.269 9.7 0.254 6.7 0.250 6.0 0.232 1.9 0.227 7.8 RD12MVS1 MITSUBISHI ELECTRIC 5/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVS1 S12 (mag) 0.016 0.016 0.016 0.016 0.016 0.014 0.014 0.015 0.013 0.013 0.012 0.009 0.011 0.009 0.010 0.007 0.006 0.008 0.005 0.005 0.006 0.004 0.007 0.004 0.004 0.004 0.003 0.003 0.003 0.004 0.004 0.005 0.005 0.004 0.004 0.003 0.007 0.006 0.005 0.008 (ang) 0.3 -6.2 -12.3 -16.7 -18.7 -24.8 -27.4 -32.9 -33.6 -27.8 -29.3 -19.7 -46.4 -51.2 -37.5 -39.4 -76.7 -46.1 -48.1 -46.9 -25.8 -45.0 -49.7 1.3 -46.8 51.2 32.2 -36.9 83.3 29.6 47.6 68.7 60.4 66.9 92.7 68.9 65.3 87.1 90.1 90.1 (mag) 0.700 0.698 0.719 0.732 0.751 0.753 0.784 0.813 0.836 0.839 0.844 0.851 0.873 0.895 0.891 0.898 0.899 0.913 0.925 0.923 0.924 0.923 0.940 0.935 0.934 0.938 0.937 0.943 0.951 0.948 0.944 0.938 0.947 0.949 0.953 0.950 0.947 0.947 0.950 0.949 S22 (ang) -150.9 -161.8 -165.9 -164.9 -166.6 -167.1 -167.7 -167.8 -168.4 -168.9 -169.9 -170.5 -171.1 -172.0 -172.4 -172.9 -173.5 -173.9 -174.8 -175.1 -175.7 -175.9 -176.4 -177.1 -177.9 -177.9 -178.1 -178.9 -179.5 -179.9 179.8 179.6 178.7 178.4 178.1 177.8 177.4 176.6 176.1 175.2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W RD12MVS1 S-PARAMETER DATA (@Vdd=12.5V, Id=900mA) Freq. [MHz] 25 50 75 100 125 150 175 200 225 250 275 300 325 350 375 400 425 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800 825 850 875 900 925 950 975 1000 S11 (mag) 0.815 0.802 0.803 0.818 0.829 0.838 0.849 0.855 0.869 0.878 0.886 0.898 0.905 0.908 0.915 0.919 0.922 0.926 0.933 0.937 0.940 0.937 0.937 0.935 0.945 0.948 0.951 0.950 0.946 0.948 0.947 0.948 0.955 0.958 0.954 0.950 0.947 0.950 0.953 0.959 (ang) -150.5 -163.9 -167.8 -169.7 -170.6 -171.5 -171.6 -172.0 -172.9 -173.7 -174.1 -174.3 -174.5 -174.9 -175.8 -176.6 -177.3 -177.7 -177.7 -177.8 -178.5 -179.3 179.7 179.7 179.6 179.7 179.5 178.9 178.0 177.2 177.1 176.9 177.1 176.8 176.2 175.3 174.9 174.9 174.9 174.7 S21 (mag) (ang) 31.656 96.3 15.905 85.5 10.443 78.2 7.776 72.7 6.054 66.0 4.816 60.7 3.945 57.1 3.358 52.9 2.872 48.7 2.459 44.8 2.135 41.8 1.876 38.8 1.671 36.3 1.492 33.5 1.329 31.1 1.188 28.7 1.083 26.9 0.974 25.0 0.894 23.0 0.816 20.9 0.745 19.6 0.700 18.2 0.643 16.2 0.605 14.6 0.549 13.1 0.510 14.1 0.479 12.6 0.454 9.0 0.424 8.9 0.382 7.2 0.370 6.0 0.357 7.4 0.332 4.4 0.323 4.9 0.301 2.7 0.296 2.4 0.284 -1.0 0.252 -0.5 0.251 2.6 0.230 -2.3 RD12MVS1 MITSUBISHI ELECTRIC 6/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Warning! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RD12MVS1 MITSUBISHI ELECTRIC 7/7 10 Jan 2006