RD12MVS1_10

Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVS1 0.2+/-0.05 (0.22) RoHS Compliance, DESCRIPTION RD12MVS1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1 4.9+/-0.15 1.0+/-0.05 2 High Power Gain: Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz High Efficiency: 57%typ. (175MHz) 3 INDEX MARK (Gate) (0.22) (0.25) (0.25) APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (input) Note ( ):center value UNIT:mm RoHS COMPLIANT RD12MVS1-101,T112 is a RoHS compliant products. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. How ever, it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e.tin-lead older alloys containing more than85% lead.) ABSOLUTE MAXIMUM RATINGS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS ID Pin Pch Tj Tstg Rthj-c PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Channel Dissipation Junction Temperature Storage Temperature Thermal Resistance CONDITIONS VGS=0V VDS=0V Zg=Zl=50Ω Tc=25°C RATINGS 50 +/- 20 4 2 50 150 -40 to +125 2.5 UNIT V V A W W °C °C °C/W Junction to Case Note: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH Pout ηD PARAMETER Zero Gate Voltage Drain Current Gate to Source Leak Current Gate Threshold Voltage Output Power Drain Efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=175MHz,VDD=7.2V Pin=1.0W,Idq=1.0A VDD=9.2V,Po=12W(Pin Control) f=175MHz,Idq=1.0A,Zg=50Ω Load VSWR=20:1(All Phase) MIN. 1.8 11.5 55 LIMITS TYP. MAX. 10 1 4.4 12 57 Not destroy UNIT uA uA V W % - Note: Above parameters, ratings, limits and conditions are subject to change. RD12MVS1 17 Aug 2010 1/7 2.0+/-0.05 FEATURES 3.5+/-0.05 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVS1 Vgs-Ids CHARACTERISTICS 10 Ta=+25°C Vds=10V RoHS Compliance, TYPICAL CHARACTERISTICS 60 CHANNEL DISSIPATION Pch(W) ... 50 40 On PCB(*1) with Heat-sink Silicon MOSFET Power Transistor, 175MHz, 12W CHANNEL DISSIPATION VS. AMBIENT TEMPERATURE *1:The material of the PCB Glass epoxy (t=0.6 mm) 8 Ids(A),GM(S) 6 4 GM Ids 30 20 10 0 0 On PCB(*1) with throgh hole and Heat-sink 2 0 40 80 120 160 AMBIENT TEMPERATURE Ta(°C) 200 0 1 2 3 4 Vgs(V) 5 6 7 Vds-Ids CHARACTERISTICS 9 Ta=+25°C Vds VS. Ciss CHARACTERISTICS 160 Vgs=7.5V Ta=+25°C f=1MHz 8 7 140 120 Ciss(pF) 100 80 60 40 20 0 Vgs=6.0V 6 Ids(A) 5 4 3 2 1 0 0 2 4 6 Vds(V) 8 10 Vgs=5.5V Vgs=5.0V Vgs=4.5V Vgs=4.0V Vgs=3.5V 0 5 10 Vds(V) 15 20 Vds VS. Coss CHARACTERISTICS 180 160 140 120 Coss(pF) 100 80 60 40 20 0 0 5 10 Vds(V) 15 20 Crss(pF) Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 20 18 16 14 12 10 8 6 4 2 0 0 5 10 Vds(V) 15 20 Ta=+25°C f=1MHz RD12MVS1 17 Aug 2010 2/7 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVS1 Pin-Po CHARACTERISTICS @f=175M Hz RoHS Compliance, TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS @f=175M Hz Silicon MOSFET Power Transistor, 175MHz, 12W 14 40 Po(dBm) , Gp(dB) , Idd(A) Ta=+25°C f=175MHz Vdd=7.2V Idq=1.0A Po 90 Po Ta=25°C f=175MHz Vdd=7.2V Idq =1.0A 80 ηｄ Gp 12 Pout(W) , Idd(A) 10 8 6 4 2 80 70 ηd(%) 17 Aug 2010 30 60 ηd(%) ηd 60 50 Idd 20 40 10 Ｉｄｄ 20 40 30 20 1000 0 -5 0 5 10 15 Pin(dBm) 20 25 30 0 0 0 200 400 600 Pin(mW) 800 V dd-Po CHARACTERISTICS @f=175M Hz 25 20 15 Po(W) Ta=25°C f=175MHz Pin=0.3W Icq =700mA Zg=ZI=50 ohm Po V gs -Ids CHARACTORISTICS 2 5 4 8 V ds=10V Tc=-25~+75°C 6 Ids(A),GM(S) +25°C -25°C +75°C Idd 3 Idd(A) 4 10 5 0 4 6 8 V dd(V ) 10 12 2 1 0 2 0 0 2 4 V gs(V ) 6 8 RD12MVS1 3/7 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVS1 Vdd C2 C3 RoHS Compliance, TEST CIRCUIT (f=175MHz) Vgg Silicon MOSFET Power Transistor, 175MHz, 12W C1 W 47pF RF-in 35mm 3mm L1 10.8nH W Contact 3.5mm Contact 3.5mm 6.0mm 5.0mm L2 43.7nH 4.7kΩ 33pF RF-out 25mm 330pF 68pF 330pF 4mm 15pF 12mm RD12MVS1 24pF 20mm 100pF Note: Board material - Teflon substrate L: Enameled wire Micro strip line width=2.2mm/50,εr:2.7,t=0.8mm L1:4Turns,D:0.43mm,φ1.66mm(outside diameter) W: line width=1.0mm L2:6Turns,D:0.43mm,φ2.46mm(outside diameter)    Chip Condencer :GRM40 C1, C2: 1000pF Copper board spring t=0.1mm C3: 10uF, 50V INPUT / OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS 175MHz Zin* Zout* Zo=50Ω Vdd=7.2V, Idq=1.0A(Vgg adj.), Pin=1.0W f=175MHz Zout* Zin*=0.965-j7.73 Zout*=1.73-j1.14 f=175MHz Zin* Zin*: Complex conjugate of input impedance Zout*: Complex conjugate of output impedance RD12MVS1 17 Aug 2010 4/7 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W RD12MVS1 S-PARAMETER DATA (@Vdd=7.2V, Id=900mA) Freq. [MHz] 25 50 75 100 125 150 175 200 225 250 275 300 325 350 375 400 425 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800 825 850 875 900 925 950 975 1000 S11 (mag) 0.824 0.816 0.817 0.829 0.837 0.845 0.852 0.860 0.870 0.876 0.886 0.891 0.902 0.903 0.909 0.907 0.912 0.923 0.928 0.934 0.932 0.936 0.932 0.935 0.939 0.939 0.943 0.945 0.943 0.939 0.943 0.948 0.951 0.953 0.952 0.954 0.944 0.951 0.954 0.955 (ang) -159.3 -169.0 -171.7 -172.8 -173.4 -173.9 -174.0 -174.3 -175.0 -175.0 -175.6 -175.8 -175.9 -176.2 -176.7 -177.6 -177.9 -178.3 -178.5 -178.6 -178.8 -179.2 179.6 179.1 179.2 179.4 179.1 178.7 177.5 177.2 176.9 176.8 177.1 176.7 176.1 175.4 174.4 174.6 175.0 175.0 S21 (mag) (ang) 26.397 93.4 13.193 85.2 8.716 79.3 6.537 74.5 5.110 68.5 4.117 64.2 3.402 60.8 2.896 57.2 2.525 53.2 2.175 48.9 1.897 46.5 1.675 43.6 1.496 41.0 1.348 38.3 1.208 35.7 1.087 33.7 0.996 31.6 0.912 29.7 0.836 27.9 0.748 25.8 0.707 23.6 0.647 23.2 0.591 20.8 0.562 20.0 0.520 17.4 0.485 15.5 0.460 15.6 0.435 15.5 0.407 13.3 0.380 12.2 0.358 10.8 0.327 8.6 0.308 8.0 0.314 8.5 0.284 7.0 0.269 9.7 0.254 6.7 0.250 6.0 0.232 1.9 0.227 7.8 S12 (mag) 0.018 0.016 0.016 0.016 0.016 0.015 0.016 0.012 0.014 0.013 0.012 0.012 0.014 0.012 0.009 0.009 0.009 0.004 0.008 0.007 0.005 0.006 0.004 0.003 0.003 0.003 0.003 0.002 0.004 0.001 0.004 0.002 0.003 0.003 0.006 0.003 0.007 0.006 0.003 0.003 (ang) -3.3 1.4 -10.9 -14.1 -18.2 -18.3 -15.1 -30.4 -29.9 -24.5 -39.4 -53.1 -32.9 -32.2 -29.2 -21.6 -32.5 -37.2 -25.9 -21.3 -46.6 -25.0 -40.9 -33.6 17.7 25.4 51.4 5.7 5.6 -16.1 58.8 -6.7 40.4 77.0 46.5 64.5 60.3 69.7 80.3 86.7 (mag) 0.761 0.765 0.778 0.787 0.800 0.796 0.810 0.836 0.858 0.855 0.859 0.860 0.886 0.898 0.898 0.893 0.903 0.910 0.917 0.925 0.922 0.922 0.939 0.939 0.938 0.930 0.932 0.946 0.949 0.940 0.935 0.943 0.945 0.948 0.946 0.950 0.946 0.952 0.959 0.950 S22 (ang) -160.3 -168.1 -170.7 -170.3 -171.7 -172.3 -172.3 -172.2 -172.2 -173.0 -173.3 -173.4 -174.5 -174.6 -175.0 -175.6 -175.7 -176.6 -176.8 -177.3 -177.6 -177.6 -178.0 -178.9 -179.3 -179.5 -179.9 -179.9 179.3 179.0 178.8 178.2 177.5 176.8 176.7 176.7 176.0 175.7 175.0 174.8 RD12MVS1 17 Aug 2010 5/7 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2. RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. RD12MVS1 17 Aug 2010 6/7 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W Keep safety first in your circuit designs ! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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