RD15HVF1

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD15HVF1 DRAWING 9.1±0.7 1.3±0.4 3.6±0.2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W DESCRIPTION RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica -tions. OUTLINE 3.2±0.4 12.3±0.6 4 9±0.4 FEATURES High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz High Efficiency: 60%typ. on VHF Band High Efficiency: 55%typ. on UHF Band 4.8MAX 1.2±0.4 note(3) 7.5MIN 4.5±0.5 12.3MIN 0.8±0.15 1 23 3.1±0.6 APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. 2.5 2.5 5deg 0.62±0.2 9.5MAX PINS 1:GATE 2:SOURCE 3:DRAIN 4:FIN(SOURCE) RoHS COMPLIANT note: (1)Torelance of no designation means typical value. Dimension in mm. (2) :Dipping area RD15HVF1-101 is a RoHS compliant products. :Copper of the ground work is exposed in case of frame separation. (3) RoHS compliance is indicate by the letter “G” after the lot marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) RD15HVF1 MITSUBISHI ELECTRIC 1/9 10 Jan 2006 9.3MIN MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD15HVF1 UNIT V V W W A °C °C °C/W RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω junction to case RATINGS 30 +/-20 48 1.5(Note2) 4 150 -40 to +150 2.6 Note 1: Above parameters are guaranteed independently. Note 2: Over 300MHz use spec is 6W ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH Pout1 ηD1 Pout2 ηD2 PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=0.6W, f=175MHz,Idq=0.5A VDD=12.5V, Pin=3W, f=520MHz,Idq=0.5A VDD=15.2V,Po=15W(PinControl) f=175MHz,Idq=0.5A,Zg=50Ω Load VSWR=20:1(All Phase) VDD=15.2V,Po=15W(PinControl) f=520MHz,Idq=0.5A,Zg=50Ω Load VSWR=20:1(All Phase) MIN 1.5 15 55 15 50 LIMITS TYP MAX. 100 1 2.0 2.5 18 60 18 55 No destroy UNIT uA uA V W % W % - Load VSWR tolerance No destroy - Note : Above parameters , ratings , limits and conditions are subject to change. RD15HVF1 MITSUBISHI ELECTRIC 2/9 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD15HVF1 Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0 Ta=+25°C Vds=10V RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL CHARACTERISTICS CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE 100 CHANNEL DISSIPATION Pch(W) 80 40 20 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) Ids(A) 60 0 2 4 6 Vgs(V) 8 10 Vds-Ids CHARACTERISTICS 10 Ta=+25°C Vds VS. Ciss CHARACTERISTICS 80 Vgs=10V Vgs=9V Vgs=8V Vgs=7V Vgs=6V Vgs=5V Ta=+25°C f=1MHz 8 6 4 2 0 0 2 4 6 Vds(V) 8 10 60 Ciss(pF) 40 20 0 0 5 10 Vds(V) 15 20 Ids(A) Vgs=4V Vgs=3V Vds VS. Coss CHARACTERISTICS 100 80 Coss(pF) 60 40 20 0 0 5 10 Vds(V) 15 20 Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 10 8 Crss(pF) 6 4 2 0 0 5 10 Vds(V) 15 20 Ta=+25°C f=1MHz RD15HVF1 MITSUBISHI ELECTRIC 3/9 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD15HVF1 Pin-Po CHARACTERISTICS 25 Po RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 50 40 30 Gp Ta= + 25°C f= 175M H z Vdd= 12.5V Idq= 0.5A 100 Po 100 80 ηd Po(dBm) , Gp(dB) , Idd( A ) 80 Pout( W) , Idd(A ) 60 40 20 Ｉｄｄ 20 15 10 5 0 0.0 Ta= 25°C f= 175M Hz Vdd= 12.5V Idq= 0.5A Idd ηd(%) 20 10 0 0 10 20 Pin(dBm) 30 40 20 0 0 0.5 Pin(W) 1.0 1.5 Pin-Po CHARACTERISTICS 50 40 30 20 Gp Ta= + 25°C f= 520M Hz Vdd= 12.5V Idq= 0.5A Pin-Po CHARACTERISTICS 100 25 20 ηd 100 80 60 Po Ta= 25°C f= 520M H z Vdd= 12.5V Idq= 0.5A Po Po(dBm) , Gp(dB) , Idd(A ) 80 60 40 20 Ｉｄｄ Pout(W) , Idd(A ) ηd(%) ηｄ 10 5 0 0 1 2 3 Pin(W) 4 40 20 0 10 0 0 10 20 Pin(dBm) 30 40 Idd 0 5 6 V dd-Po CHARACTERISTICS 25 20 15 Idd Ta= 25°C f= 175M Hz Pi n= 0.6W Idq= 0.5A Zg= ZI= 50 ohm Po V dd-Po CHARACTERISTICS 5 4 3 2 1 0 25 20 15 Idd Ta= 25°C f= 520M H z Pin= 3W Idq= 0.5A Zg= ZI= 50 ohm 5 4 3 2 1 0 4 6 8 10 V dd(V ) 12 14 Po Idd(A ) Po(W) 10 5 0 4 6 8 10 V dd(V ) 12 14 Po(W) 10 5 0 RD15HVF1 MITSUBISHI ELECTRIC 4/9 10 Jan 2006 Idd(A ) ηd(%) 15 ηd(%) ηｄ 60 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL CHARACTERISTICS Vgs-Ids CHARACTERISTICS 2 10 8 6 +75°C Vds=10V Tc=-25~+75°C -25°C +25°C Ids(A) 4 2 0 0 2 4 6 Vgs(V) 8 10 TEST CIRCUIT(f=175MHz) Vgg C1 Vdd 9.1kOHM L3 C3 8.2kOHM 100OHM C2 L1 175MHz RD15HVF1 L2 RF-IN 56pF 56pF RF-OUT 82pF 25pF 25pF 25pF 25pF 25pF 22 45 62 73 92 100 7 10pF 25pF 25pF 7 12 40 42 74 95 100 Note:Board material-Teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm C1:2200pF 10uF in parallel C2:2200pF*2 in parallel C3:2200pF,330uF in parallel L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire RD15HVF1 MITSUBISHI ELECTRIC 5/9 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD15HVF1 Vdd RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TEST CIRCUIT(f=520MHz) Vgg C1 9.1kOHM L3 C3 8.2kOHM 100OHM 10pF L1 15pF L2 RF-OUT 56pF 12pF 5pF C2 520MHz RD15HVF1 RF-IN 56pF 7 90 100 7 90 10 0 C1:2200pF 10uF in parallel C2:2200pF*2 in parallel C3:2200pF,330uF in parallel L1:4Turns,I.D6mm,D 1.6mm P=1 silver plateted copper wire L2:2Turns,I.D6mm,D 1.6mm P=1 silver plateted copper wire L3:4Turns,I.D6mm,D 1.6mm P=1 silver plateted copper wire Note:Board material-Teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm RD15HVF1 MITSUBISHI ELECTRIC 6/9 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=520MHz Zout f=520MHz Zin f=175MHz Zout Zo=50ohm f=175MHz Zin Zin , Zout f (MHz) 175 520 Zin (ohm) 2.34-j8.01 5.42+j9.22 Zout (ohm) 3.06+j0.74 6.02+j12.34 Conditions Po=15W, Vdd=12.5V,Pin=0.6W Po=15W, Vdd=12.5V,Pin=3.0W RD15HVF1 MITSUBISHI ELECTRIC 7/9 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD15HVF1 S12 S22 (ang) 26.0 27.7 36.1 41.8 48.1 57.7 65.3 70.3 73.5 74.6 73.9 73.9 72.6 62.8 59.6 57.8 54.8 51.4 49.4 (mag) 0.556 0.547 0.560 0.571 0.588 0.625 0.647 0.683 0.716 0.734 0.765 0.777 0.788 0.859 0.870 0.877 0.880 0.886 0.892 (ang) -130.2 -150.4 -157.8 -160.1 -161.8 -164.3 -167.5 -170.9 -173.7 -176.8 179.4 178.0 176.3 159.0 155.7 152.4 149.0 145.7 142.1 (mag) 0.023 0.024 0.025 0.025 0.026 0.030 0.036 0.044 0.053 0.062 0.072 0.076 0.082 0.135 0.143 0.153 0.163 0.170 0.178 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W RD15HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. [MHz] 50 100 150 175 200 250 300 350 400 450 500 520 550 800 850 900 950 1000 1050 S11 (mag) 0.717 0.726 0.744 0.748 0.755 0.770 0.787 0.804 0.821 0.838 0.849 0.854 0.862 0.900 0.904 0.909 0.910 0.910 0.911 (ang) -145.9 -163.9 -171.1 -173.6 -175.9 -179.0 177.6 174.6 171.2 168.2 165.1 163.7 161.7 145.0 141.3 137.9 134.6 131.2 127.5 (mag) 23.274 12.054 8.049 6.804 5.886 4.622 3.731 3.092 2.623 2.229 1.938 1.845 1.695 0.971 0.864 0.790 0.738 0.662 0.612 S21 (ang) 101.8 85.7 74.7 70.2 66.3 58.6 51.5 45.3 39.1 33.2 28.3 26.1 22.9 4.2 0.0 -1.4 -4.4 -6.8 -8.4 RD15HVF1 MITSUBISHI ELECTRIC 8/9 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RD15HVF1 MITSUBISHI ELECTRIC 9/9 10 Jan 2006