RD15HVF1_10

Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD15HVF1 DRAWING 9.1+/-0.7 1.3+/-0.4 3.6+/-0.2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W DESCRIPTION RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica -tions. OUTLINE 3.2+/-0.4 12.3MIN High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz High Efficiency: 60%typ. on VHF Band High Efficiency: 55%typ. on UHF Band 4.8MAX 9+/-0.4 FEATURES 12.3+/-0.6 2 1.2+/-0.4 0.8+0.10/-0.15 123 APPLICATION 3.1+/-0.6 5deg 4.5+/-0.5 For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. 0.5+0.10/-0.15 2.5 2.5 RoHS COMPLIANT 9.5MAX note: RD15HVF1-101 is a RoHS compliant products. Torelance of no designation means typical value. RoHS compliance is indicate by the letter “G” after the lot Dimension in mm. marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) PINS 1:GATE 2:SOURCE 3:DRAIN RD15HVF1 6 Jul 2010 1/10 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD15HVF1 UNIT V V W W A °C °C °C/W RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω junction to case RATINGS 30 +/-20 48 1.5(Note2) 4 150 -40 to +150 2.6 Note 1: Above parameters are guaranteed independently. Note 2: Over 300MHz use spec is 6W ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH Pout1 ηD1 Pout2 ηD2 PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=0.6W, f=175MHz,Idq=0.5A VDD=12.5V, Pin=3W, f=520MHz,Idq=0.5A VDD=15.2V,Po=15W(PinControl) f=175MHz,Idq=0.5A,Zg=50Ω Load VSWR=20:1(All Phase) VDD=15.2V,Po=15W(PinControl) f=520MHz,Idq=0.5A,Zg=50Ω Load VSWR=20:1(All Phase) MIN 1.5 15 55 15 50 LIMITS TYP MAX. 100 1 2.0 2.5 18 60 18 55 No destroy UNIT uA uA V W % W % - Load VSWR tolerance No destroy - Note : Above parameters , ratings , limits and conditions are subject to change. RD15HVF1 6 Jul 2010 2/10 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD15HVF1 Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0 Ta=+25°C Vds=10V RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL CHARACTERISTICS CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE 100 CHANNEL DISSIPATION Pch(W) 80 40 20 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) Ids(A) 60 0 2 4 6 Vgs(V) 8 10 Vds-Ids CHARACTERISTICS 10 Ta=+25°C Vds VS. Ciss CHARACTERISTICS 80 Vgs=10V Vgs=9V Vgs=8V Vgs=7V Vgs=6V Vgs=5V Ta=+25°C f=1MHz 8 6 4 2 0 0 2 4 6 Vds(V) 8 10 60 Ciss(pF) 40 20 0 0 5 10 Vds(V) 15 20 Ids(A) Vgs=4V Vgs=3V Vds VS. Coss CHARACTERISTICS 100 80 Coss(pF) 60 40 20 0 0 5 10 Vds(V) 15 20 Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 10 8 Crss(pF) 6 4 2 0 0 5 10 Vds(V) 15 20 Ta=+25°C f=1MHz RD15HVF1 6 Jul 2010 3/10 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD15HVF1 Pin-Po CHARACTERISTICS 25 Po RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 50 40 30 Gp Ta=+25°C f=175MHz Vdd=12.5V Idq=0.5A 100 Po 100 80 ηd Po(dBm) , Gp(dB) , Idd(A) 80 60 40 20 Ｉｄｄ 20 Pout(W) , Idd(A) 15 10 5 0 0.0 Ta=25°C f=175MHz Vdd=12.5V Idq=0.5A Idd ηd(%) 20 10 0 0 10 20 Pin(dBm) 30 40 20 0 0 0.5 Pin(W) 1.0 1.5 Pin-Po CHARACTERISTICS 50 40 30 20 Gp Ta=+25°C f=520MHz Vdd=12.5V Idq=0.5A Pin-Po CHARACTERISTICS 100 25 20 ηd 100 80 60 Po Ta=25°C f=520MHz Vdd=12.5V Idq=0.5A Po Po(dBm) , Gp(dB) , Idd(A) 80 60 40 20 Ｉｄｄ Pout(W) , Idd(A) ηd(%) ηｄ 10 5 0 0 1 2 3 Pin(W) 4 40 20 0 10 0 0 10 20 Pin(dBm) 30 40 Idd 0 5 6 V dd-Po CHARACTERISTICS 25 20 15 Idd Ta=25°C f=175MHz Pin=0.6W Idq=0.5A Zg=ZI=50 ohm Po Vdd-Po CHARACTERISTICS 5 4 3 2 1 0 25 20 15 Idd Ta=25°C f=520MHz Pin=3W Idq=0.5A Zg=ZI=50 ohm 5 4 3 2 1 0 4 6 8 10 Vdd(V) 12 14 Po Idd(A) Po(W) 10 5 0 4 6 8 10 Vdd(V) 12 14 Po(W) 10 5 0 RD15HVF1 4/10 Idd(A) ηd(%) 15 ηd(%) ηｄ 60 6 Jul 2010 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TYPICAL CHARACTERISTICS Vgs-Ids CHARACTERISTICS 2 10 8 6 +75°C Vds=10V Tc=-25~+75°C -25°C +25°C Ids(A) 4 2 0 0 2 4 6 Vgs(V) 8 10 TEST CIRCUIT(f=175MHz) Vgg C1 Vdd 9.1kOHM L3 C3 8.2kOHM 100OHM C2 L1 175MHz RD15HVF1 L2 RF-IN 56pF 56pF RF-OUT 82pF 25pF 25pF 25pF 25pF 25pF 22 45 62 73 92 100 7 10pF 25pF 25pF 7 12 40 42 74 95 100 Note:Board material-Teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm C1:2200pF 10uF in parallel C2:2200pF*2 in parallel C3:2200pF,330uF in parallel L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire RD15HVF1 6 Jul 2010 5/10 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD15HVF1 Vdd RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W TEST CIRCUIT(f=520MHz) Vgg C1 9.1kOHM L3 C3 8.2kOHM 100OHM 10pF L1 15pF L2 RF-OUT 56pF 12pF 5pF C2 520MHz RD15HVF1 RF-IN 56pF 7 90 100 7 90 100 C1:2200pF 10uF in parallel C2:2200pF*2 in parallel C3:2200pF,330uF in parallel L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2:2Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire Note:Board material-Teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm RD15HVF1 6 Jul 2010 6/10 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=520MHz Zout f=520MHz Zin f=175MHz Zout Zo=50ohm f=175MHz Zin Zin , Zout f (MHz) 175 520 Zin (ohm) 2.34-j8.01 5.42+j9.22 Zout (ohm) 3.06+j0.74 6.02+j12.34 Conditions Po=15W, Vdd=12.5V,Pin=0.6W Po=15W, Vdd=12.5V,Pin=3.0W RD15HVF1 6 Jul 2010 7/10 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD15HVF1 S12 S22 (ang) 26.0 27.7 36.1 41.8 48.1 57.7 65.3 70.3 73.5 74.6 73.9 73.9 72.6 62.8 59.6 57.8 54.8 51.4 49.4 (mag) 0.556 0.547 0.560 0.571 0.588 0.625 0.647 0.683 0.716 0.734 0.765 0.777 0.788 0.859 0.870 0.877 0.880 0.886 0.892 (ang) -130.2 -150.4 -157.8 -160.1 -161.8 -164.3 -167.5 -170.9 -173.7 -176.8 179.4 178.0 176.3 159.0 155.7 152.4 149.0 145.7 142.1 (mag) 0.023 0.024 0.025 0.025 0.026 0.030 0.036 0.044 0.053 0.062 0.072 0.076 0.082 0.135 0.143 0.153 0.163 0.170 0.178 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W RD15HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. [MHz] 50 100 150 175 200 250 300 350 400 450 500 520 550 800 850 900 950 1000 1050 S11 (mag) 0.717 0.726 0.744 0.748 0.755 0.770 0.787 0.804 0.821 0.838 0.849 0.854 0.862 0.900 0.904 0.909 0.910 0.910 0.911 (ang) -145.9 -163.9 -171.1 -173.6 -175.9 -179.0 177.6 174.6 171.2 168.2 165.1 163.7 161.7 145.0 141.3 137.9 134.6 131.2 127.5 (mag) 23.274 12.054 8.049 6.804 5.886 4.622 3.731 3.092 2.623 2.229 1.938 1.845 1.695 0.971 0.864 0.790 0.738 0.662 0.612 S21 (ang) 101.8 85.7 74.7 70.2 66.3 58.6 51.5 45.3 39.1 33.2 28.3 26.1 22.9 4.2 0.0 -1.4 -4.4 -6.8 -8.4 RD15HVF1 6 Jul 2010 8/10 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2. RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. RD15HVF1 6 Jul 2010 9/10 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD15HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W Keep safety first in your circuit designs ! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials - These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. - Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. - All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (http://www.mitsubishichips.com). - When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. 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Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. - The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. - If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. - Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. RD15HVF1 6 Jul 2010 10/10