RD16HHF1_08

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD16HHF1 DRAWING 9.1+/- 0. 7 1.3+/- 0. 4 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION 3.2+/-0.4 RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. OUTLINE 3. 6+/- 0.2 4.8MAX 9+/- 0.4 High power gain: Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz 12. 3+/ -0.6 FEATURES 2 1.2+/- 0. 4 0. 8+0.10/- 0.15 APPLICATION For output stage of high power amplifiers in HF band mobile radio sets. 12.3MI N 123 0.5+0. 10/ -0.15 2. 5 2. 5 3. 1+/ -0.6 5deg 4.5+/- 0.5 9. 5MAX note: RD16HHF1-101 is a RoHS compliant products. T orelance of no designation means typical value. RoHS compliance is indicate by the letter “G” after the lot D im ension in mm . marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) RoHS COMPLIANT PINS 1:GAT E 2:SOU RCE 3:DRA IN RD16HHF1 MITSUBISHI ELECTRIC 1/8 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD16HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain to source current Channel temperature Storage temperature Thermal resistance CONDITIONS RATINGS UNIT Vgs=0V 50 V Vds=0V +/- 20 V Tc=25°C 56.8 W Zg=Zl=50Ω 0.8 W 5 A °C 150 -40 to +150 °C °C/W junction to case 2.2 Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH Pout ηD PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=0.4W, f=30MHz, Idq=0.5A VDD=15.2V,Po=16W(Pin Control) f=30MHz,Idq=0.5A,Zg=50Ω Load VSWR=20:1(All Phase) MIN 1.7 16 55 LIMITS TYP MAX. 10 1 4.7 19 65 No destroy UNIT uA uA V W % - Note : Above parameters , ratings , limits and conditions are subject to change. RD16HHF1 MITSUBISHI ELECTRIC 2/8 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD16HHF1 Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0 Vds=10V Ta=+25°C RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W TYPICAL CHARACTERISTICS CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE 80 CHANNEL DISSIPATION Pch(W) 60 Ids(A) 40 20 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) 0 2 4 6 Vgs(V) 8 10 Vds-Ids CHARACTERISTICS 8 Ta=+25°C Vgs=10V Vds VS. Ciss CHARACTERISTICS 60 50 Vgs=9V 6 Ids(A) 40 Vgs=8V Ciss(pF) 4 Vgs=7V 30 20 10 0 0 10 Vds(V) 20 30 Ta=+25°C f=1MHz 2 Vgs=6V 0 0 2 4 6 Vds(V) 8 10 Vgs=5V Vds VS. Coss CHARACTERISTICS 100 Ta=+25°C Ta=+25°C 80 f=1MHz f=1MHz Coss(pF) 60 40 20 0 0 10 Vds(V) 20 30 Ta=+25°C f=1MHz Crss(pF) 10 8 6 4 2 0 Vds VS. Crss CHARACTERISTICS Ta=+25°C f=1MHz 0 10 Vds(V) 20 30 RD16HHF1 MITSUBISHI ELECTRIC 3/8 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD16HHF1 Pin-Po CHARACTERISTICS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 50 Po(dBm) , Gp(dB),Idd(A) 40 30 20 10 Ｉｄｄ Ta=+25°C f=30MHz Vdd=12.5V Idq=0.5A Gp 100 Po 25 20 Pout(W ) Idd(A) ηd(%) 15 10 5 0 0.0 0.2 0.4 Pin(W ) 0.6 0.8 Po 100 80 ηd(%) 7 Mar 2008 80 ηｄ 60 40 20 0 -10 0 10 Pin(dBm) 20 30 ηd Ta=+25°C f=30MHz Vdd=12.5V Idq=0.5A Idd 60 40 20 0 0 Vdd-Po CHARACTERISTICS 30 25 20 Po(W ) 15 10 5 0 4 6 8 10 Vdd(V) 12 14 Ta=25°C f=30MHz Pin=0.4W Idq=0.5A Zg=ZI=50 ohm Vgs-Ids CHARACTERISTICS 2 6 5 8 Vds=10V Tc=-25~+75°C +25°C -25°C Po 6 Idd(A) Ids(A) 4 Idd 3 2 1 0 4 +75°C 2 0 2 4 6 Vgs(V) 8 10 RD16HHF1 MITSUBISHI ELECTRIC 4/8 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD16HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W TEST CIRCUIT(f=30MHz) V gg Vd d C1 L2 8.2K o hm C1 330 uF ,5 0V 2 20p F 68 pF 100 p F 1K o hm C2 RF -IN 1 ohm 22 0pF 20p F 10 0pF 82 pF L3 C1 L1 RD 1 6 HHF 1 1 0 uF ,5 0 V * 3 p c s C1 88 pF C2 RF -O UT L4 10 0pF L5 20 0pF 20 0pF 5 15 65 75 85 90 10 0 1.5 15 34 41 43 45 67 91 10 0 C 1 :1 0 0 p F ,0 .0 2 2 uF ,0 .1 uF i n p a ra lle l C 2 :4 7 0 p F * 2 i n p aralle l L 1 :1 0 Turns ,I.D 8 m m ,D 0 .9 m m c o p p e r w i re L 2 :1 0 Turns ,I.D 6mm,D 1 .6 mm s i lve r p lateted c o pp e r w i re L 3 :9 Turns ,I.D 5 .6 mm,D 0 .9 mm c o pp er w i re L 4 :4 Turns ,I.D 5 .6 mm,D 0 .9 mm,P = 0 .5 mm c o p p e r w i re L 5 :5 Turns ,I.D 5 .6 mm,D 0 .9 mm,P = 1 mm c o p p e r w i re / D i m e ns i o ns :m m N o te :B o a rd m a te ri a l-te flo n s ub s tra te mi c ro s tri p li ne w i dth= 4 .2 mm/5 0 o hm,e r:2 .7 ,t= 1 .6 mm RD16HHF1 MITSUBISHI ELECTRIC 5/8 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD16HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS Zo=50Ω f=30MHz Zout f=30MHz Zin Zin , Zout f (MHz) 30 Zin (ohm) 20.02-j89.42 Zout (ohm) 2.99-j3.66 Conditions Po=20W, Vdd=12.5V,Pin=0.4W RD16HHF1 MITSUBISHI ELECTRIC 6/8 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD16HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W RD16HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=800mA) Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 (mag) 0.928 0.761 0.676 0.650 0.679 0.709 0.742 0.775 0.801 0.826 0.844 0.861 0.874 0.884 0.892 0.900 0.903 0.908 0.912 0.912 0.913 0.913 (ang) -43.2 -96.8 -121.9 -145.8 -156.4 -162.7 -168.0 -173.0 -177.7 177.7 173.2 169.0 164.8 160.7 156.9 153.0 149.1 145.5 141.7 137.9 134.3 130.7 S21 (mag) (ang) 50.035 150.2 32.680 117.1 22.018 101.3 11.543 81.0 7.560 66.2 5.380 55.7 4.126 45.9 3.208 36.9 2.592 29.6 2.133 22.6 1.775 16.6 1.509 11.3 1.283 5.9 1.114 2.1 0.974 -1.9 0.855 -5.3 0.759 -8.4 0.678 -11.3 0.614 -13.5 0.559 -15.3 0.509 -17.3 0.467 -17.9 S12 (mag) 0.013 0.025 0.027 0.025 0.023 0.022 0.026 0.034 0.045 0.056 0.069 0.081 0.093 0.104 0.117 0.129 0.140 0.150 0.161 0.172 0.180 0.190 (ang) 60.6 34.3 24.3 20.3 27.0 46.4 63.2 74.4 78.3 78.4 78.1 75.3 73.1 69.8 67.2 63.7 60.6 56.8 53.8 50.4 47.1 43.6 (mag) 0.705 0.588 0.540 0.543 0.586 0.633 0.698 0.727 0.769 0.805 0.822 0.851 0.867 0.877 0.894 0.897 0.904 0.914 0.915 0.917 0.922 0.920 S22 (ang) -44.6 -92.6 -116.9 -138.4 -147.1 -153.2 -158.1 -163.2 -168.0 -172.8 -176.8 178.9 174.7 170.9 166.9 163.4 159.6 155.9 152.9 149.0 145.4 142.4 RD16HHF1 MITSUBISHI ELECTRIC 7/8 7 Mar 2008 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD16HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RD16HHF1 MITSUBISHI ELECTRIC 8/8 7 Mar 2008