RD16HHF1_10

Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD16HHF1 DRAWING 9.1+/-0.7 1.3+/-0.4 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION 3.2+/-0.4 RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. OUTLINE 3.6+/-0.2 4.8MAX 9+/-0.4 High power gain: Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz 12.3+/-0.6 FEATURES 2 1.2+/-0.4 0.8+0.10/-0.15 APPLICATION For output stage of high power amplifiers in HF band mobile radio sets. 12.3MIN 123 0.5+0.10/-0.15 2.5 2.5 3.1+/-0.6 5deg 4.5+/-0.5 9.5MAX note: RD16HHF1-101 is a RoHS compliant products. Torelance of no designation means typical value. RoHS compliance is indicate by the letter “G” after the lot Dimension in mm. marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.) RoHS COMPLIANT PINS 1:GATE 2:SOURCE 3:DRAIN RD16HHF1 6 Jul 2010 1/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD16HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain to source current Channel temperature Storage temperature Thermal resistance CONDITIONS RATINGS UNIT Vgs=0V 50 V Vds=0V +/- 20 V Tc=25°C 56.8 W Zg=Zl=50Ω 0.8 W 5 A °C 150 -40 to +150 °C °C/W junction to case 2.2 Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH Pout ηD PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=0.4W, f=30MHz, Idq=0.5A VDD=15.2V,Po=16W(Pin Control) f=30MHz,Idq=0.5A,Zg=50Ω Load VSWR=20:1(All Phase) MIN 1.7 16 55 LIMITS TYP MAX. 10 1 4.7 19 65 No destroy UNIT uA uA V W % - Note : Above parameters , ratings , limits and conditions are subject to change. RD16HHF1 6 Jul 2010 2/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD16HHF1 Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0 Vds=10V Ta=+25°C RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W TYPICAL CHARACTERISTICS 80 CHANNEL DISSIPATION Pch(W) CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE 60 Ids(A) 40 20 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) 0 2 4 6 Vgs(V) 8 10 Vds-Ids CHARACTERISTICS 8 Ta=+25°C Vgs=10V Vds VS. Ciss CHARACTERISTICS 60 50 Vgs=9V 6 Ids(A) 40 Vgs=8V Ciss(pF) 4 Vgs=7V 30 20 10 0 0 10 Vds(V) 20 30 Ta=+25°C f=1MHz 2 Vgs=6V 0 0 2 4 6 Vds(V) 8 10 Vgs=5V Vds VS. Coss CHARACTERISTICS 100 Ta=+25°C Ta=+25°C 80 f=1MHz f=1MHz Coss(pF) 60 40 20 0 0 10 Vds(V) 20 30 Ta=+25°C f=1MHz Crss(pF) 10 8 6 4 2 0 Vds VS. Crss CHARACTERISTICS Ta=+25°C f=1MHz 0 10 Vds(V) 20 30 RD16HHF1 6 Jul 2010 3/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD16HHF1 Pin-Po CHARACTERISTICS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 50 Po(dBm) , Gp(dB),Idd(A) 40 30 20 10 Ｉｄｄ Ta=+25°C f=30MHz Vdd=12.5V Idq=0.5A Gp 100 Po 25 20 Pout(W) Idd(A) ηd(%) 15 10 5 0 0.0 0.2 0.4 Pin(W) 0.6 0.8 Po 100 80 ηd(%) 6 Jul 2010 80 ηｄ 60 40 20 0 -10 0 10 Pin(dBm) 20 30 ηd Ta=+25°C f=30MHz Vdd=12.5V Idq=0.5A Idd 60 40 20 0 0 Vdd-Po CHARACTERISTICS 30 25 20 Po(W) 15 10 5 0 4 6 8 10 Vdd(V) 12 14 Ta=25°C f=30MHz Pin=0.4W Idq=0.5A Zg=ZI=50 ohm Vgs-Ids CHARACTERISTICS 2 6 5 8 Vds=10V Tc=-25~+75°C +25°C -25°C Po 6 Idd(A) Ids(A) 4 Idd 3 2 1 0 4 +75°C 2 0 2 4 6 Vgs(V) 8 10 RD16HHF1 4/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD16HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W TEST CIRCUIT(f=30MHz) V gg V dd C1 L2 8.2K ohm C1 330uF,50V 220pF 68pF 100pF 1K ohm C2 RF-IN 1 ohm 220pF 20pF 100pF 82pF L3 C1 L1 R D 16HHF1 10uF,50V *3pcs C1 88pF C2 RF-OUT L4 100pF 200pF 200pF L5 5 15 65 75 85 90 100 1.5 15 34 41 43 45 67 91 100 C 1:100pF,0.022uF,0.1uF in parallel C 2:470pF*2 in parallel L1:10Turns,I.D 8mm,D 0.9mm copper wire L2:10Turns,I.D 6mm,D 1.6mm silver plateted copper wire L3:9Turns,I.D 5.6mm,D 0.9mm copper wire L4:4Turns,I.D 5.6mm,D 0.9mm,P =0.5mm copper wire L5:5Turns,I.D 5.6mm,D 0.9mm,P =1mm copper wire / D imensions:mm Note:B oard material-teflon substrate micro strip line width=4.2mm/50 ohm,er:2.7,t=1.6mm RD16HHF1 6 Jul 2010 5/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD16HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS Zo=50Ω f=30MHz Zout f=30MHz Zin Zin , Zout f (MHz) 30 Zin (ohm) 20.02-j89.42 Zout (ohm) 2.99-j3.66 Conditions Po=20W, Vdd=12.5V,Pin=0.4W RD16HHF1 6 Jul 2010 6/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD16HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W RD16HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=800mA) Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 (mag) 0.928 0.761 0.676 0.650 0.679 0.709 0.742 0.775 0.801 0.826 0.844 0.861 0.874 0.884 0.892 0.900 0.903 0.908 0.912 0.912 0.913 0.913 (ang) -43.2 -96.8 -121.9 -145.8 -156.4 -162.7 -168.0 -173.0 -177.7 177.7 173.2 169.0 164.8 160.7 156.9 153.0 149.1 145.5 141.7 137.9 134.3 130.7 S21 (mag) (ang) 50.035 150.2 32.680 117.1 22.018 101.3 11.543 81.0 7.560 66.2 5.380 55.7 4.126 45.9 3.208 36.9 2.592 29.6 2.133 22.6 1.775 16.6 1.509 11.3 1.283 5.9 1.114 2.1 0.974 -1.9 0.855 -5.3 0.759 -8.4 0.678 -11.3 0.614 -13.5 0.559 -15.3 0.509 -17.3 0.467 -17.9 S12 (mag) 0.013 0.025 0.027 0.025 0.023 0.022 0.026 0.034 0.045 0.056 0.069 0.081 0.093 0.104 0.117 0.129 0.140 0.150 0.161 0.172 0.180 0.190 (ang) 60.6 34.3 24.3 20.3 27.0 46.4 63.2 74.4 78.3 78.4 78.1 75.3 73.1 69.8 67.2 63.7 60.6 56.8 53.8 50.4 47.1 43.6 (mag) 0.705 0.588 0.540 0.543 0.586 0.633 0.698 0.727 0.769 0.805 0.822 0.851 0.867 0.877 0.894 0.897 0.904 0.914 0.915 0.917 0.922 0.920 S22 (ang) -44.6 -92.6 -116.9 -138.4 -147.1 -153.2 -158.1 -163.2 -168.0 -172.8 -176.8 178.9 174.7 170.9 166.9 163.4 159.6 155.9 152.9 149.0 145.4 142.4 RD16HHF1 6 Jul 2010 7/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD16HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2. RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. RD16HHF1 6 Jul 2010 8/9 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD16HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W Keep safety first in your circuit designs ! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials - These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer’s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. - Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. - All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. 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RD16HHF1 6 Jul 2010 9/9