RD30HVF1_10

Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HVF1 DRAWING 22.0+/-0.3 18.0+/-0.3 7.2+/-0.5 7.6+/-0.3 4-C1 RoHS Compliance, DESCRIPTION RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. Silicon MOSFET Power Transistor,175MHz,30W OUTLINE High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency: 60%typ. 2 3 R1.6 14.0+/-0.4 6.6+/-0.3 FEATURES 1 APPLICATION For output stage of high power amplifiers in VHF band Mobile radio sets. 2.3+/-0.3 2.8+/-0.3 0.10 3.0+/-0.4 5.1+/-0.5 PIN 1.Drain 2.Source 3.Gate UNIT:mm RoHS COMPLIANT RD30HVF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω junction to case RATINGS 30 +/-20 75 2.5 7 175 -40 to +175 2.0 UNIT V V W W A °C °C °C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS SYMBOL IDSS IGSS VTH Pout ηD PARAMETER (Tc=25°C, UNLESS OTHERWISE NOTED) CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=175MHz ,VDD=12.5V Pin=1.0W, Idq=0.5A VDD=15.2V,Po=30W(PinControl) f=175MHz,Idq=0.5A,Zg=50Ω Load VSWR=20:1(All Phase) MIN 1.3 30 55 LIMITS TYP MAX. 130 1 1.8 2.3 35 60 No destroy UNIT uA uA V W % - Zero gate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance Note : Above parameters , ratings , limits and conditions are subject to change. RD30HVF1 17 Aug 2010 1/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HVF1 Vgs-Ids CHARACTERISTICS 10 Ta=+25°C Vds=10V RoHS Compliance, TYPICAL CHARACTERISTICS 100 CHANNEL DISSIPATION Pch(W) ... 80 60 40 20 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta(°C) 200 CHANNEL DISSIPATION VS. AMBIENT TEMPERATURE Silicon MOSFET Power Transistor,175MHz,30W 8 6 4 2 0 0 1 2 3 Vgs(V) 4 5 Vds-Ids CHARACTERISTICS 10 Ta=+25°C Vgs=5.5V Ids(A) Vds VS. Ciss CHARACTERISTICS 200 180 Vgs=5V Ta=+25°C f=1MHz 8 6 Ids(A) 160 140 Ciss(pF) 120 100 80 60 40 20 0 0 Vgs=4.5V 4 2 Vgs=4V Vgs=3.5V Vgs=3V 0 0 2 4 6 Vds(V) 8 10 5 10 Vds(V) 15 20 Vds VS. Coss CHARACTERISTICS 140 120 100 Coss(pF) 80 60 40 20 0 0 5 10 Vds(V) 15 20 4 0 0 Crss(pF) 12 8 Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 20 Ta=+25°C f=1MHz 16 5 10 Vds(V) 15 20 RD30HVF1 17 Aug 2010 2/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HVF1 Pin-Po CHARACTERISTICS 50 100 Po RoHS Compliance, TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Ta=+25°C f=175MHz Vdd=12.5V Idq=0.5A Silicon MOSFET Power Transistor,175MHz,30W 50 Po(dBm) , Gp(dB) , Idd(A) 40 30 20 10 0 0 Po 100 40 80 ηｄ 80 60 Ta=25°C f=175MHz Vdd=12.5V Idq=0.5A Idd Pout(W) , Idd(A) Gp ηd(%) 40 20 0 10 20 Pin(dBm) 30 20 10 0 0 0.5 1 1.5 Pin(W) 40 20 0 2.5 Ｉｄｄ 2 V dd-Po CHARACTERISTICS 80 Ta=25°C f=175MHz Pin=1.0W Idq=0.5A Zg=ZI=50 ohm Po Vgs-Ids CHARACTERISTICS 2 16 14 12 10 Idd(A) Ids(A) 8 Idd 8 Vds=10V Tc=-25~+75°C 6 +75°C 4 -25°C +25°C 60 Po(W) 40 6 4 2 2 20 0 4 6 8 10 Vdd(V) 12 14 0 0 2 3 Vgs(V) 4 5 RD30HVF1 17 Aug 2010 3/8 ηd(%) 60 30 ηd Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HVF1 Vdd RoHS Compliance, TEST CIRCUIT(f=175MHz) Silicon MOSFET Power Transistor,175MHz,30W Vgg C1 9.1kOHM 100OHM L2 L1 C3 8.2kOHM L1 RF-in 56pF 100pF 100pF 10pF 175MHz RD30HVF1 C2 RF-OUT 56pF 8pF 33pF100pF 27 32 34 51 90 100 12 10 32 43pF 5pF 50pF 8 4.8 44 54 90 100 Note:Board material-Teflon substrate 10.8 C1:2200pF 10uF in parallel C2:2200pF*2 in parallel C3:2200pF,330uF in parallel L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm RD30HVF1 17 Aug 2010 4/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HVF1 Zo=10Ω RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=175MHz Zout f=146MHz Zout f=135MHz Zout f=175MHz Zin f=135MHz Zin f=146MHz Zin Zin , Zout f (MHz) 135 146 175 Zin (ohm) 0.71-j7.67 0.94-j6.46 0.53-j5.34 Zout (ohm) 1.72-j0.86 2.12-j0.78 1.87-j0.70 Conditions Po=40W, Vdd=12.5V,Pin=1.0W Po=38W, Vdd=12.5V,Pin=1.0W Po=35W, Vdd=12.5V,Pin=1.0W RD30HVF1 17 Aug 2010 5/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HVF1 S12 S22 (ang) -11.6 -18.8 -22.2 -24.2 -26.2 -27.0 -24.4 -18.5 -8.2 8.0 21.6 35.6 45.7 53.5 58.4 61.6 60.7 61.5 63.1 65.6 62.3 (mag) 0.687 0.723 0.740 0.760 0.806 0.825 0.853 0.879 0.887 0.902 0.914 0.918 0.928 0.933 0.936 0.943 0.947 0.947 0.953 0.955 0.958 (ang) -166.3 -168.8 -169.6 -170.5 -172.5 -174.8 -177.1 -179.4 178.4 176.1 174.1 172.2 170.2 168.4 166.6 164.8 163.3 161.7 159.9 158.7 155.5 (mag) 0.015 0.014 0.013 0.012 0.010 0.009 0.007 0.006 0.005 0.004 0.005 0.005 0.005 0.007 0.007 0.008 0.009 0.011 0.011 0.013 0.015 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W RD30HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. [MHz] 100 150 175 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1100 S11 (mag) 0.867 0.879 0.885 0.888 0.905 0.915 0.926 0.933 0.936 0.945 0.950 0.951 0.954 0.957 0.962 0.963 0.963 0.963 0.962 0.964 0.966 (ang) -172.4 -176.3 -177.5 -179.1 178.5 176.2 174.1 171.8 169.5 167.6 165.6 163.6 161.7 159.9 158.2 156.5 154.8 153.2 151.6 150.1 146.9 (mag) 8.747 5.523 4.571 3.852 2.877 2.202 1.754 1.422 1.167 0.985 0.842 0.725 0.635 0.559 0.495 0.449 0.407 0.366 0.337 0.315 0.275 S21 (ang) 72.7 61.2 56.4 52.4 44.1 37.1 31.4 25.8 20.9 17.2 13.3 9.8 7.2 3.7 1.3 -0.5 -3.8 -5.2 -6.6 -9.9 -12.1 RD30HVF1 17 Aug 2010 6/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the formal specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2. RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. RD30HVF1 17 Aug 2010 7/8 Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD30HVF1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W Keep safety first in your circuit designs ! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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RD30HVF1 17 Aug 2010 8/8