RD35HUF2

< Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W OUTLINE DRAWING a' 0.10 24.60 18.00 DESCRIPTION RD35HUF2 is MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications. 1 a-a' SEC TION 12 .95 12 .69 6.3 8 2 3 4 5.5 6 RD35HUF2 Lot No.-G ○ FEATURES 1. Supply with Tape and Reel. 500 Units per Reel. 2. Employing Mold Package 3. High Power and High Efficiency Pout=43Wtyp, Drain Effi.=60%typ @ Vds=12.5V Idq=0.5A Pin=3.0W f=530MHz Pout=45Wtyp, Drain Effi.=72%typ @ Vds=12.5V Idq=1.0A Pin=3.0W f=175MHz 4. Integrated gate protection diode 3 .1 0 5 3.15 6 a 7 3.63 0. 22 8 0. 34 0.10 3.6 5 2.40 4 Pin 1. SOURCE (COMMON) 2. OPEN 3. DRAIN 4. SOURCE (COMMON) 5. SOURCE (COMMON) 6. OPEN 7. GATE 8. SOURCE (COMMON) 3 RD35HUF2 2 1 13.40 ○ Lot No.-G APPLIC ATION For output stage of high power amplifiers in VHF/UHF band mobile radio sets. 8 7 6 5 Unit: mm RoHS COMPLIANT RD35HUF2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it is applicable to the following exceptions of RoHS Directions. 1. Lead in high melting temperature type solders. (i.e. tin-lead solders alloys containing more than 85% lead.) Publication Date : May 2011 1 5 .87 3. 70 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to Source Voltage Gate to Source Voltage Channel Dissipation Input Power Drain Current Channel Temperature Storage Temperature Thermal Resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω Junction to Case RATINGS 40 -5/+10 166 6 10 175 -40 to +175 0.9 UNIT V V W W A °C °C °C/W Note: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL IDSS* IGSS* VTH* Pout1 D1 Pout2 D2 PARAMETER Zero Gate Voltage Drain Current Gate to Source Leak Current Gate Threshold Voltage Output Power Drain Efficiency Output Power Drain Efficiency CONDITIONS VDS=37V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=530MHz*,VD S=12.5V, Pin=3.0W, Idq=500mA f=175MHz**,VDS=12.5V, Pin=3.0W, Idq=500mA MIN 1.6 LIMITS TYP MAX. 150 2.5 2.0 2.4 43 60 45 72 UNIT μA μA V W % W % VSWR VSWRT Load VSWR Tolerance All phase, VDS=16.3V increased after Pout adjusted to 40W (Zg/Zl=50Ω) by 20:1 Pin(under f=135MHz**, VDS=12.5V and Idq=500mA) Note: Above parameters, ratings, limits and conditions are subject to change. * In Mitsubishi UHF Evaluation Board ** In Mitsubishi VHF Evaluation Board Publication Date : May 2011 2 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) VDS-IDS Characteristics 5.0V 15 4.5V Ta=+25℃ ID S (A ) ｇ ｍ （ S ) VGS-IDS Characteristics 10 9 8 7 Ta=+25℃ VDS=10V 10 IDS(A) 4.0V 6 5 4 3 2 gm 5 3.5V IDS 0 0 2 4 6 8 VDS(V) 10 12 3.0V VGS=2.7V 14 1 0 0 0.5 1 1.5 2 VGS(V) 2.5 3 3.5 4 VDS VS. Ciss Characteristics 300 250 200 Cis s ( pF) VDS VS. Coss Characteristics 300 Ta=+25 ℃ f=1MHz Ta=+25℃ f=1MHz 250 200 C os s (p F) 150 100 50 0 0 5 10 15 20 25 VDS(V) 30 35 40 150 100 50 0 0 5 10 15 20 25 VDS(V) 30 35 40 VDS VS. Crss Characteristics 30 25 20 Cr s s ( pF) Ta=+25 ℃ f=1MHz 15 10 5 0 0 5 10 15 20 25 VDS(V) 30 35 40 Publication Date : May 2011 3 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W VHF-band TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Frequency Characteristics @f=135 to 175MHz Ta=+25deg.C Vds=12.5V, Idq=0.5A, Pin=3W 80 ηD 16 14 Gp 70 Pou t(W) , D rain Effi(%) 50 40 30 Pout 10 8 Idd 6 20 4 130 135 140 145 150 155 160 165 170 175 180 f (MHz) Publication Date : May 2011 4 Gp(dB ), Idd(A ) 60 12 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W VHF-band TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Output Power versus Input Power Ta=+25deg.C,Vds=12.5V, Idq=0.5A Input Return Loss versus Output Power Ta=+25deg.C,Vds=12.5V, Idq=0.5A 60 50 40 30 20 10 0 0 1 2 3 4 Pin, INPUT POWER(W) 5 6 155MHz 135MHz I RL, INPUT RETURN LOSS ( dB) 0 175MHz Po ut , O UT PU T P O WE R(W) -5 -10 -15 -20 -25 -30 0 135MHz 155MHz 175MHz 10 20 30 40 50 Pout, OUTPUT POWER(W) 60 Gain versus Output Power Ta=+25deg.C,Vds=12.5V, Idq=0.5A Drain Efficiency versus Output Power Ta=+25deg.C,Vds=12.5V, Idq=0.5A 21 20 Gp, POWER GAIN( dB) 80 155MHz 135MHz 175MHz η, DR AIN E FF IC IEN C Y(%) 70 60 50 175MHz 155MHz 19 18 17 16 15 14 13 12 11 0 10 135MHz 40 30 20 10 0 20 30 40 50 Pout, OUTPUT POWER(W) 60 0 10 20 30 40 50 Pout, OUTPUT POWER(W) 60 Publication Date : May 2011 5 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W VHF-band TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Output Power versus Biasing Current Pin=3W Ta=+25deg.C,Vds=12.5V 50 175MHz P o u t , O U T P U T P O W E R (W ) Drain Efficiency versus Biasing Current Pin=3W Ta=+25deg.C,Vds=12.5V 80 155MHz η , D R A IN E F F IC IE N C Y (% ) 175MHz 45 70 40 135MHz 155MHz 60 135MHz 35 50 30 200 40 400 600 800 1000 1200 IDQ, BIASING CURRENT(mA) 1400 200 400 600 800 1000 1200 IDQ, BIASING CURRENT(mA) 1400 Output Power versus Supply Voltage Pin=3W Ta=+25deg.C, Idq=0.5A 70 P o u t , O U T P U T P O W E R (W ) Drain Efficiency versus Supply Voltage Pin=3W Ta=+25deg.C, Idq=0.5A 80 175MHz η , D R A IN E F F IC IE N C Y (% ) 60 175MHz 70 50 135MHz 60 155MHz 135MHz 40 155MHz 30 50 20 10 11 12 13 14 VDD, SUPPLY VOLTAGE(V) 15 40 10 11 12 13 14 VDD, SUPPLY VOLTAGE(V) 15 Publication Date : May 2011 6 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W UHF-band, 380 - 430MHz, TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Output Power versus Input Power Ta=+25deg.C,Vds=12.5V, Idq=0.7A Input Return Loss versus Output Power Ta=+25deg.C,Vds=12.5V, Idq=0.7A 60 430MHz Pou t , OUTPU T POWER( W) 0 380MHz IRL, INPUT RETURN LOSS (dB) 50 40 30 20 10 0 0 1 2 3 4 Pin, INPUT POWER(W) 5 6 405MHz 380MHz -5 -10 -15 405MHz -20 -25 430MHz -30 -35 -40 0 10 20 30 40 50 Pout, OUTPUT POWER(W) 60 Gain versus Output Power Ta=+25deg.C,Vds=12.5V, Idq=0.7A Drain Efficiency versus Output Power Ta=+25deg.C,Vds=12.5V, Idq=0.7A 16 70 405MHz 430MHz 430MHz η , DR AIN E FFICIEN C Y(%) 15 Gp, POW ER GAIN (dB) 60 50 405MHz 14 13 12 11 10 9 0 10 20 30 40 50 Pout, OUTPUT POWER(W) 60 380MHz 40 30 20 10 0 0 380MHz 10 20 30 40 50 Pout, OUTPUT POWER(W) 60 Publication Date : May 2011 7 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W UHF-band, 380 - 430MHz, TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Output Power versus Input Power, Digital Modulation Ta=+25deg.C,Vds=12.5V, Idq=0.7A (MOD: π /4 DQPSK, 18 k bps , α =0.35, Ch-BW /Sp=18 k Hz /25k Hz ) Ta=+25deg.C,Vds=12.5V, Idq=0.7A (MOD: π/4 DQPSK, 18k bps , α = 0.35, Ch-BW /Sp= 1 8k Hz /25k Hz ) 40 Pout , OUTPUT POWER(d Bm) Pou t , OUTPU T POWER( W) 50 45 40 35 30 25 20 10 20 30 Pin, INPUT POWER(dBm) 10 20 30 Pin, INPUT POWER(dBm) 430MHz 380MHz 405MHz 30 20 405MHz 10 380MHz 430MHz 0 Gain and Adjacent Channel Power Ratio versus Output Power, Digital Modulation Ta=+25deg.C,Vds=12.5V, Idq=0.7A (MOD: π/ 4 DQPSK , 18kbps , α = 0. 35, Ch-BW/ Sp= 18kHz /25kHz ) Ta=+25deg.C,Vds=12.5V, Idq=0.7A (M OD: π /4 DQ PSK, 18k bps , α=0. 35, Ch-BW /S p=18k Hz / 25k Hz ) 16 0 16 0 430MHz 15 Gp, POWER GAIN(dB) Gp -10 Gp, POWER GAIN(dB) 430MHz 15 ACP-Upper(dBc) Gp -10 -20 ACP-Lower(dBc) 14 -20 14 380MHz 13 12 11 10 30 40 Pout, OUTPUT POWER(dBm) 50 380MHz 13 12 11 10 30 40 Pout, OUTPUT POWER(dBm) 50 405MHz -30 -40 -50 -60 405MHz -30 -40 430MHz 380MHz ACP 430MHz 380MHz ACP -50 -60 Publication Date : May 2011 8 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W UHF-band, 450 - 530MHz, TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Frequency Characteristics @f=450 to 530MHz Ta=+25deg.C, Vds=12.5V,Idq=0.5A, Pin=3W 70 ηD 16 14 Gp 60 Pout(W) , Dra in Effi(%) 40 30 Pout 10 8 Idd 20 10 f (MHz) 6 4 440 450 460 470 480 490 500 510 520 530 540 Publication Date : May 2011 9 Gp(dB), Idd(A) 50 12 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W UHF-band, 450 - 530MHz, TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Output Power versus Input Power Ta=+25deg.C,Vds=12.5V, Idq=0.5A Input Return Loss versus Output Power Ta=+25deg.C,Vds=12.5V, Idq=0.5A 60 490MHz 50 40 30 20 10 0 0 1 2 3 4 Pin, INPUT POWER(W) 5 6 450MHz 530MHz I RL , INPUT RET URN LOSS ( dB) 0 Po ut , OUT PU T P OW ER (W) 450MHz -5 -10 -15 -20 -25 -30 0 10 20 30 40 50 Pout, OUTPUT POWER(W) 60 490MHz 530MHz Gain versus Output Power Ta=+25deg.C,Vds=12.5V, Idq=0.5A Drain Efficiency versus Output Power Ta=+25deg.C,Vds=12.5V, Idq=0.5A 15 14 Gp, POWER GAIN(dB) 70 η, DRAIN EFFICIENCY(%) 60 50 40 30 20 10 0 530MHz 490MHz 13 12 490MHz 450MHz 450MHz 11 530MHz 10 9 0 10 20 30 40 50 Pout, OUTPUT POWER(W) 60 0 10 20 30 40 50 Pout, OUTPUT POWER(W) 60 Publication Date : May 2011 10 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W UHF-band, 450 - 530MHz, TYPICAL CHARACTERISTICS (These are only typical curves and devices are not necessarily guaranteed at these curves.) Output Power versus Biasing Current Pin=3W Ta=+25deg.C,Vds=12.5V 50 490MHz 45 Drain Efficiency versus Biasing Current Pin=3W Ta=+25deg.C,Vds=12.5V 80 P ou t , OUTP UT PO WER(W) η, DRAIN EFFICIENCY (%) 70 530MHz 40 450MHz 35 530MHz 60 50 450MHz 490MHz 30 200 400 600 800 1000 1200 IDQ, BIASING CURRENT(mA) 1400 40 200 400 600 800 1000 1200 IDQ, BIASING CURRENT(mA) 1400 Output Power versus Supply Voltage Pin=3W Ta=+25deg.C, Idq=0.5A 70 Pou t , O UT PU T P OW ER (W) Drain Efficiency versus Supply Voltage Pin=3W Ta=+25deg.C, Idq=0.5A 80 490MHz η , D R AI N EF FI CI EN C Y( % ) 60 50 40 30 20 10 10 450MHz 530MHz 70 530MHz 60 450MHz 50 490MHz 40 11 12 13 14 VDD, SUPPLY VOLTAGE(V) 15 10 11 12 13 14 VDD, SUPPLY VOLTAGE(V) 15 Publication Date : May 2011 11 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W EQUIVALENT CIRCUITRY for VHF EVALUATION BOARD (f=135 - 175MHz) Gate Bias C9 C8 R1 RD35HUF2 Source Electrode3 C10 Drain Bias C30 L6 C31 C32 Source Electrode1 W=1.2 L=20.0 ML2 RFOUT VIA VIA W=2.2 L=3.0 ML1 W=4.0 L=3.0 ML1 R2 R3 C11 C12 C14 C13 C16 C18 C15 C 17 C19 C21 C 20 C23 C24 C25 C26 C27 C28 RF IN ML2 W=2.0 L=11.0 C1 W=2.0 L=4.0 ML2 L1 W=2.0 L=10.0 ML2 W=2.0 L=18.0 ML2 L2 W=4.0 L=5.0 ML1 W=4.6 L=5.3 ML1 W=3.6 L=2.9 ML1 W=1.8 L=15.0 ML1 W=1.2 L=15.0 ML1 VIA VIA VIA L4 W=2.0 L=5.0 ML2 L5 W=2.0 L=9.0 C29 ML2 W=2.0 L=16.0 ML2 L3 C2 C3 C4 C5 C6 C7 Source Electrode4 C22 Source Electrode2 Board material: Glass Epoxy Substrate-er=4.8, TanD=0.018 @1GHz Micro Strip Line Substrate Thickness: ML1, T=0.2 ML2, T=1.1 VIA Hole Dimensions, Diameter=0.8 Length=1.6 UNIT: W/L/T, mm C1 C2, C3 C4 C5, C6, C7 C8, C9 C10, C11 L1 L2, L3 R1 R2, R3 470 22 12 68 1000 100 17 10 2200 16 pF pF pF pF pF pF nH nH ohm ohm 3.2*1.6 1.6*0.8 1.6*0.8 1.6*0.8 2.0*1.2 1.6*0.8 1.6*0.8 1.6*0.8 2.0*1.2 Chip Ceramic Capacitors High Q Chip Ceramic Capacitors High Q Chip Ceramic Capacitors High Q Chip Ceramic Capacitors Chip Ceramic Capacitors High Q Chip Ceramic Capacitors 4Turn Rolling Coil chip Inductors chip Resistors chip Resistors C12, C13, C14, C15,C16 C17, C18, C19, C20 C21, C22, C23, C24, C25 C26 C27 C28 C29 C30, C31 C32 L4 L5 L6 15 47 22 18 15 24 470 1000 220 8 12 25 pF pF pF pF pF pF pF pF uF nH nH nH 2.0*1.2 2.0*1.2 2.0*1.2 2.0*1.2 2.0*1.2 2.0*1.2 3.2*1.6 2.0*1.2 - High Q Chip Ceramic Capacitors High Q Chip Ceramic Capacitors High Q Chip Ceramic Capacitors High Q Chip Ceramic Capacitors High Q Chip Ceramic Capacitors High Q Chip Ceramic Capacitors Chip Ceramic Capacitors Chip Ceramic Capacitors 35V, Electrolytic Capacitor 2Turn Rolling Coil 3Turn Rolling Coil 5Turn Rolling Coil For more information regarding this evaluation board, refer to APPLICATION NOTE “AN-VHF-048” Publication Date : May 2011 12 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W EQUIVALENT CIRCUITRY for UHF EVALUATION BOARD (f=380 - 430MHz) Drain Bias L11 C18 C19 C20 C15 W=1.2 L=15.0 Gate Bias RD35HUF2 Source Electrode3 Source Electrode1 C10 W=3.6 W=1.8 L=2.9 L=4.5 RF IN C1 ML2 W=2.0 L=11.0 C8 W=2.0 L=14.0 ML2 C7 W=0.8 L=18.0 R1 L1 C5 VIA VIA ML1 ML1 W=4.0 W=2.2 L=11.5 L=3.0 C6 L2 Source Electrode4 Source Electrode2 ML1 W=4.6 L=5.3 VIA VIA VIA ML2 L10 W=6.6 L=4.8 C17 ML2 W=2.0 L=16.0 RFOUT ML1 ML1 ML1 ML2 ML2 W=2.0 L=14.0 ML2 W=1.2 L=20.0 C2 Characteristic impidance 50ohm C3 C4 C11 C12 C13 C14 C16 Characteristic impidance 50ohm Board material: Glass Epoxy Substrate-er=4.8, TanD=0.018 @1GHz Micro Strip Line Substrate Thickness: ML1, T=0.2 ML2, T=1.1 VIA Hole Dimensions, Diameter=0.8 Length=1.6 UNIT: W/L/T, mm C1 330 pF 3.2*1.6 C2 6 pF 1.6*0.8 C3 27 pF 1.6*0.8 C4 9 pF 1.6*0.8 C5, C6 18 pF 1.6*0.8 C7, C8 1000 pF 2.0*1.2 R1 2.2 kohm 1.6*0.8 L1, L2 2.2 nH 1.6*0.8 Chip Ceramic Capacitors High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic Chip Ceramic Capacitors Chip Inductors C10 33 pF C11 33 pF C12 18 pF C13 18 pF C14 5 pF C15 1.2 pF C16 9 pF C17 100 pF C18, C19 1000 pF C20 220 uF L10 8 nH L11 17 nH 2.0*1.2 2.0*1.2 2.0*1.2 2.0*1.2 2.0*1.2 2.0*1.2 2.0*1.2 3.2*2.5 2.0*1.2 - High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic Chip Ceramic Capacitors 35V, Electrolytic Capacitor 2Turn Rolling Coil 4Turn Rolling Coil For more information regarding this evaluation board, refer to APPLICATION NOTE “ AN-UHF-127” Publication Date : May 2011 13 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W EQUIVALENT CIRCUITRY for UHF EVALUATION BOARD (f=450 - 530MHz) Gate Bias RD35HUF2 Source Electrode3 C8 C7 W=0.8 L=18.0 Drain Bias Source Electrode1 C10 W=3.6 W=1.8 L=2.9 L=4.5 W=1.2 L=15.0 R1 C5 VIA VIA VIA L1 W=1.2 L=20.0 C18 C19 C20 RFOUT C17 ML2 W=6.6 L=4.8 ML2 W=2.0 L=14.0 RF IN C1 ML2 W=2.0 L=11.0 VIA ML1 VIA W=2.2 L=3.0 ML2 W=2.0 L=14.0 C2 ML2 ML1 W=4.0 L=11.5 ML1 W=4.6 L=5.3 ML1 ML1 ML1 ML2 ML2 W=2.0 L=16.0 C3 C4 C11 C6 Source Electrode4 Source Electrode2 C12 C13 C14 C15 C16 Characteristic impidance 50ohm Characteristic impidance 50ohm Board material: Glass Epoxy Substrate-er=4.8, TanD=0.018 @1GHz Micro Strip Line Substrate Thickness: ML1, T=0.2 ML2, T=1.1 VIA Hole Dimensions, Diameter=0.8 Length=1.6 UNIT: W/L/T, mm C1 330 pF C2 6.2 pF C3 18 pF C4 9 pF C5, C6 18 pF C7, C8 1000 pF R1 2.2 kohm 3.2*1.6 1.6*0.8 1.6*0.8 1.6*0.8 1.6*0.8 2.0*1.2 1.6*0.8 Chip Ceramic Capacitors High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic Chip Ceramic Capacitors C10 33 pF C11 33 pF C12 2.4 pF C13 12 pF C14 3.3 pF C15 5.1 pF C16 9.1 pF C17 100 pF C18, C19 1000 pF C20 220 uF L1 29 nH 2.0*1.2 2.0*1.2 2.0*1.2 2.0*1.2 2.0*1.2 2.0*1.2 2.0*1.2 3.2*2.5 2.0*1.2 - High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic High Q Chip Ceramic Chip Ceramic Capacitors 35V, Electrolytic Capacitor 6Turn Rolling Coil For more information regarding this evaluation board, refer to APPLICATION NOTE “AN-UHF-112” Publication Date : May 2011 14 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W Input / Output Impedance VS. Frequency Characteristics f=175MHz f=155MHz f=135MHz @Pin=3W, Vds=12.5V, Idq=0.5A f Zout* (MHz) (ohm) 135 1.77-j0.80 155 1.83-j0.59 175 1.38-j0.07 Zout*: Complex conjugate of output impedance Zo=10ohm Zout* ( f=135, 155, 175MHz) Zin* ( f=135, 155, 175MHz) Zo=10ohm @Pin=3W, Vds=12.5V, Idq= 0.5A f Zin* (MHz) (ohm) 135 6.64+j0.83 155 6.43+j0.57 175 3.84+j2.13 f=175MHz Zin*: Complex conjugate of input impedance f=155MHz f=135MHz Publication Date : May 2011 15 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W Input / Output Impedance VS. Frequency Characteristics f=430MHz f=405MHz f=380MHz @Pin=3W, Vds=12.5V, Idq=0.5A f Zout* (MHz) (ohm) 380 1.44-j0.41 405 1.43-j0.30 430 1.30-j0.19 Zout*: Complex conjugate of output impedance Zo=10ohm Zout* ( f=380, 405, 430MHz) Zin* ( f=380, 405, 430MHz) Zo=10ohm @Pin=3W, Vds=12.5V, Idq= 0.5A f Zin* (MHz) (ohm) 380 1.34+j0.00 405 1.43+j0.58 430 1.52+j1.11 f=430MHz f=405MHz f=380MHz Zin*: Complex conjugate of input impedance Publication Date : May 2011 16 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W Input / Output Impedance VS. Frequency Characteristics Zout* ( f=450, 490, 530MHz) Zo=10ohm @Pin=3W, Vds=12.5V, Idq=0.5A f Zout* (MHz) (ohm) 450 1.59+j0.69 490 1.57+j0.91 530 1.14+j1.24 Zout*: Complex conjugate of output impedance f=530MHz f=490MHz f=450MHz Zin* ( f=450, 490, 530MHz) Zo=10ohm @Pin=3W, Vds=12.5V, Idq= 0.5A f Zin* (MHz) (ohm) 450 1.79+j0.77 490 1.99+j1.38 530 2.06-j1.69 f=530MHz f=490MHz f=450MHz Zin*: Complex conjugate of input impedance Publication Date : May 2011 17 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W Small Signal Parameter of RD35HUF2 Bias Condition: Vds=12.5V, Idq=0.5A Freq [MHz] 100 135 150 175 200 250 300 350 400 450 500 530 550 600 650 700 750 800 850 900 950 1000 1050 1100 (mag) 0.884 0.896 0.903 0.911 0.920 0.933 0.946 0.954 0.958 0.964 0.968 0.970 0.971 0.970 0.971 0.974 0.976 0.977 0.975 0.976 0.977 0.978 0.979 0.979 S11 (ang) -173.6 -174.0 -174.2 -174.5 -174.7 -175.3 -175.8 -176.4 -177.0 -177.5 -178.0 -178.3 -178.5 -179.4 -179.9 179.4 178.8 178.1 177.3 176.6 175.7 174.7 173.7 172.7 (mag) 4.946 3.449 3.020 2.471 2.059 1.473 1.109 0.857 0.687 0.552 0.458 0.409 0.393 0.350 0.299 0.268 0.240 0.209 0.191 0.179 0.162 0.152 0.141 0.132 S21 (ang) 71.4 64.9 62.5 58.7 55.1 49.7 45.1 41.9 39.9 37.6 35.5 36.4 35.9 35.5 33.7 34.1 34.6 34.8 34.0 36.2 35.9 36.8 37.1 39.1 (mag) 0.010 0.009 0.009 0.008 0.008 0.006 0.005 0.004 0.003 0.003 0.002 0.002 0.002 0.002 0.002 0.003 0.004 0.004 0.005 0.006 0.006 0.007 0.008 0.009 S12 (ang) -15.3 -20.1 -20.8 -23.1 -25.0 -27.6 -27.3 -24.3 -19.0 -8.6 8.3 20.0 32.5 54.8 72.1 84.6 92.8 97.7 102.0 104.0 106.7 107.9 110.6 110.5 (mag) 0.829 0.848 0.858 0.872 0.885 0.906 0.922 0.935 0.947 0.954 0.960 0.965 0.966 0.966 0.968 0.971 0.974 0.979 0.978 0.980 0.981 0.984 0.986 0.985 S22 (ang) -173.1 -173.1 -173.0 -173.2 -173.4 -173.9 -174.5 -175.0 -175.7 -176.3 -177.0 -177.2 -177.4 -178.2 -178.8 -179.4 179.9 179.2 177.9 177.1 176.4 175.6 174.7 173.7 Publication Date : May 2011 18 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W ATTENTION: 1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a possibility to receive a burn to touch the operating product directly or touc h the product until cold after switch off. At the near the product,do not place the combustible material that have possibilities to arise the fire. 2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES: 1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding operation of these products from the forma l specification sheet. For copies of the formal specification sheets, please contact one of our sales offices. 2. RD series products (RF power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed ne cessary for critical communications elements. Examples of critical communications elements would include transmitters for base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact to society. 3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate ESD precautions are required. 4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the RF-swing exceed the breakdown voltage. 5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions. 6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. 7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary items in the specification sheet. 8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it’s original form. 9. For additional “Safety first” in your circuit design and notes regarding t he materials, please refer the last page of this data sheet. 10. Please refer to the additional precautions in the formal specification sheet. Publication Date : May 2011 19 < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur wit h them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. 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Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. •The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. •If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : May 2011 20