RD45HMF1_06

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD45HMF1 DRAWING 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor 900MHz,45W OUTLINE RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers applications. 4-C2 24.0+/-0.6 FEATURES High power and High Gain: Pout>45W, Gp>4.7dB @Vdd=12.5V,f=900MHz High Efficiency: 50%typ. 2 10.0+/-0.3 9.6+/-0.3 3 R1.6+/-0.15 0.1 -0.01 4.5+/-0.7 6.2+/-0.7 +0.05 APPLICATION For output stage of high power amplifiers in 800-900MHz Band mobile radio sets. 5.0+/-0.3 18.5+/-0.3 RoHS COMPLIANT RD45HMF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω junction to case RATINGS 30 +/-20 125 25 15 175 -40 to +175 1.2 UNIT V V W W A °C °C °C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS SYMBOL IDSS IGSS VTH Pout ηD PARAMETER Zerogate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance (Tc=25°C UNLESS OTHERWISE NOTED) CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=900MHz ,VDD=12.5V Pin=15W,Idq=2.0A VDD=15.2V,Po=45W(PinControl) Idq=2.0A,Zg=50Ω Load VSWR=20:1(All Phase) MIN 1.0 45 45 LIMITS TYP MAX. 10 1 3.0 50 50 No destroy UNIT uA uA V W % - Note : Above parameters , ratings , limits and conditions are subject to change. RD45HMF1 3.3+/-0.2 MITSUBISHI ELECTRIC 1/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD45HMF1 Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0 Ta=+25°C Vds=10V RoHS Compliance, TYPICAL CHARACTERISTICS 160 CHANNEL DISSIPATION Pch(W) DRAIN DISSIPATION VS. AMBIENT TEMPERATURE Silicon MOSFET Power Transistor 900MHz,45W 120 Ids(A) 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) 80 40 0 0 1 2 Vgs(V) 3 4 Vds-Ids CHARACTERISTICS 10 Ta=+25°C Vgs=4V Vds VS. Ciss CHARACTERISTICS 300 250 200 Vgs=3.4V Vgs=3.1V Vgs=2.8V Ta=+25°C f=1MHz 8 6 4 2 0 0 2 4 6 Vds(V) 8 10 Vgs=3.7V Ciss(pF) Ids(A) 150 100 50 0 0 5 10 Vds(V) 15 20 Vgs=2.5V Vgs=2.2V Vds VS. Coss CHARACTERISTICS 500 400 Coss(pF) 300 200 100 0 0 5 10 Vds(V) 15 20 Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 40 Ta=+25°C f=1MHz 30 Crss(pF) 20 10 0 0 5 10 Vds(V) 15 20 RD45HMF1 MITSUBISHI ELECTRIC 2/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD45HMF1 Pin-Po CHARACTERISTICS 70 140 Ta= 25°C f= 900M Hz Vdd= 12.5V Idq= 2A RoHS Compliance, TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Ta= + 25°C f= 900M Hz Vdd= 12.5V Idq= 2A Silicon MOSFET Power Transistor 900MHz,45W 50 Po(dBm) , Gp(dB) , Idd(A ) 40 30 20 Po 100 80 Pout(W) , Idd(A ) ηd( %) 60 ηｄ 60 50 40 120 Po 100 ηd( %) 80 ηd 40 20 0 30 20 10 0 0 5 10 15 Pin(W) 20 25 Idd 60 40 20 0 Gp 10 0 25 30 35 Pin(dBm) 40 Ｉｄｄ 45 V dd-Po CHARACTERISTICS 100 80 60 40 20 0 4 6 8 10 V dd(V ) 12 14 Idd Ta= 25°C f= 900M Hz Pin= 15W Idq= 2A Zg= ZI= 50 ohm V gs -Ids CHARACTERISTICS 2 25 20 15 10 5 0 10 8 6 4 2 0 1.5 2.5 Vgs (V) 3.5 V ds =10V Tc =-25~+75°C +25°C Po Po(W) Idd(A ) Ids (A ) +75°C -25°C RD45HMF1 MITSUBISHI ELECTRIC 3/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD45HMF1 RoHS Compliance, TEST CIRCUIT(f=900MHz) Silicon MOSFET Power Transistor 900MHz,45W V gg V dd C1 9. 1K O H M 8. 2k O H M 100O HM C1 f= 900 M H z 100p F L1 5pF 5/ 5 p F L1 330 uF , 50V RF -IN 56pF 56pF RF -O UT 5pF 2p F 5/ 5pF 5/ 5pF 2p F 3 pF 1p F 10 4 18 53 77 90 100 Di m ens ion s : m m 17 41 49 83 90 100 14 12 8 C1: 2200p F * 2 i n p a ra ll el L1: 1Turns , I. D 3m m , D1 . 5 m m s i l ve r p l at e t ed c o p per w i re Not e : B oard m a t e ri al -Teflo n s ubs t ra t e M i c ro s t ri p li ne wi dt h = 4. 2 m m / 50O HM , e r: 2. 7 , t = 1. 6m m RD45HMF1 MITSUBISHI ELECTRIC 4/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD45HMF1 RoHS Compliance, Silicon MOSFET Power Transistor 900MHz,45W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=900MHz Zout f=900MHz Zin Zo=10Ω Zin , Zout f (MHz) 900 Zin (ohm) 1.53-j0.17 Zout (ohm) 1.63+j0.34 Conditions Po=45W, Vdd=12.5V,Pin=15W RD45HMF1 MITSUBISHI ELECTRIC 5/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD45HMF1 S12 S22 (ang) 0.7 -26.0 -1.0 -25.4 24.9 14.3 60.8 66.9 66.0 33.5 74.4 52.8 71.1 70.5 57.8 71.3 78.6 65.7 64.1 59.4 57.5 55.0 54.6 52.0 47.9 43.8 40.7 33.2 32.8 10.7 (mag) 0.864 0.877 0.895 0.924 0.936 0.937 0.948 0.954 0.951 0.956 0.962 0.961 0.966 0.961 0.958 0.968 0.956 0.960 0.965 0.955 0.958 0.961 0.953 0.949 0.958 0.943 0.946 0.948 0.937 0.934 (ang) -176.6 -177.8 -179.0 179.7 178.8 177.6 176.2 174.6 173.7 172.5 170.8 169.6 168.1 166.1 164.6 163.2 161.1 159.5 156.7 154.6 152.0 148.9 145.6 142.9 138.9 135.4 132.3 127.9 124.3 120.9 (mag) 0.008 0.011 0.011 0.007 0.005 0.004 0.005 0.006 0.008 0.008 0.012 0.009 0.013 0.016 0.014 0.022 0.021 0.024 0.026 0.028 0.031 0.031 0.037 0.038 0.041 0.044 0.045 0.046 0.048 0.061 RoHS Compliance, Silicon MOSFET Power Transistor 900MHz,45W RD45HMF1 S-PARAMETER DATA (@Vdd=12.5V, Id=800mA) Freq. [MHz] 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 S11 (mag) 0.902 0.911 0.917 0.932 0.941 0.945 0.950 0.955 0.959 0.961 0.964 0.963 0.966 0.967 0.965 0.969 0.969 0.966 0.967 0.963 0.963 0.961 0.956 0.955 0.954 0.949 0.949 0.948 0.943 0.939 (ang) -177.8 -179.0 -179.6 179.9 178.7 177.7 176.6 175.5 174.4 173.6 171.6 170.3 168.5 167.0 165.3 163.0 161.1 158.8 156.3 153.9 150.9 148.3 145.2 142.3 139.3 136.1 133.0 129.6 126.3 123.0 (mag) 4.481 2.125 1.319 0.889 0.642 0.497 0.384 0.318 0.265 0.226 0.178 0.166 0.147 0.109 0.106 0.102 0.106 0.113 0.122 0.106 0.101 0.093 0.094 0.096 0.091 0.093 0.081 0.083 0.086 0.087 S21 (ang) 77.4 63.5 52.3 43.0 35.6 30.2 23.3 18.7 15.6 11.1 9.0 7.6 2.2 0.3 8.8 16.2 10.0 4.1 -3.7 1.7 1.7 -6.4 -4.9 -6.1 -10.5 -12.6 -16.4 -19.7 -24.1 -31.6 RD45HMF1 MITSUBISHI ELECTRIC 6/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD45HMF1 RoHS Compliance, Silicon MOSFET Power Transistor 900MHz,45W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. RD45HMF1 MITSUBISHI ELECTRIC 7/7 10 Jan 2006