RD60HUF1

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD60HUF1 DRAWING 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor 520MHz,60W OUTLINE RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications. 4-C2 24.0+/-0.6 FEATURES High power and High Gain: Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz High Efficiency: 55%typ.on UHF Band 2 10.0+/-0.3 9.6+/-0.3 3 R1.6+/-0.15 0.1 -0.01 4.5+/-0.7 6.2+/-0.7 +0.05 APPLICATION For output stage of high power amplifiers in UHF Band mobile radio sets. 5.0+/-0.3 18.5+/-0.3 RoHS COMPLIANT RD60HUF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω junction to case RATINGS 30 +/-20 150 20 20 175 -40 to +175 1.0 UNIT V V W W A °C °C °C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH Pout ηD PARAMETER Zerogate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=520MHz ,VDD=12.5V Pin=10W, Idq=2.5A VDD=15.2V,Po=60W(PinControl) f=520MHz,Idq=2.5A,Zg=50Ω Load VSWR=20:1(All Phase) MIN 1.1 60 50 LIMITS TYP MAX. 400 1 1.45 1.8 65 55 No destroy UNIT uA uA V W % - Note : Above parameters , ratings , limits and conditions are subject to change. RD60HUF1 3.3+/-0.2 MITSUBISHI ELECTRIC 1/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD60HUF1 Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0 Ta=+25°C Vds=10V RoHS Compliance, TYPICAL CHARACTERISTICS DRAIN DISSIPATION VS. AMBIENT TEMPERATURE Silicon MOSFET Power Transistor 520MHz,60W 180 CHANNEL DISSIPATION Pch(W) 160 140 120 80 60 40 20 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) Ids(A) 100 0 1 2 Vgs(V) 3 4 Vds-Ids CHARACTERISTICS 10 Ta=+25°C Vds VS. Ciss CHARACTERISTICS 400 350 Vgs=3.1V 8 6 300 Ciss(pF) 250 200 150 100 50 0 0 5 10 Vds(V) 15 20 Ta=+25°C f=1MHz Ids(A) Vgs=2.8V 4 2 0 0 2 4 6 Vds(V) 8 10 Vgs=2.5V Vgs=2.2V Vds VS. Coss CHARACTERISTICS 350 300 250 Coss(pF) 200 150 100 50 0 0 5 10 Vds(V) 15 20 10 0 Crss(pF) 30 20 Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 50 40 Ta=+25°C f=1MHz 0 5 10 Vds(V) 15 20 RD60HUF1 MITSUBISHI ELECTRIC 2/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD60HUF1 Pin-Po CHARACTERISTICS 100 100 Po RoHS Compliance, TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS Ta= + 25°C f= 520M Hz Vdd= 12.5V Idq= 2.5A Silicon MOSFET Power Transistor 520MHz,60W 50 Po(dBm) , Gp(dB) , Idd(A ) 40 30 20 10 0 10 Po 100 80 Pout( W) , Idd( A ) 80 ηｄ 80 ηd ηd( %) 60 40 20 Ｉｄｄ 40 20 0 0 5 10 Pin(W) Gp Ta= 25°C f= 520M Hz Vdd= 12.5V Idq= 2.5A Idd 40 20 0 0 40 20 30 Pin(dBm) 15 20 V dd-Po CHARACTERISTICS 90 80 70 60 Po( W) 50 40 30 20 10 0 4 6 8 10 V dd(V ) 12 14 Ta= 25°C f= 520M Hz Pin= 10W Idq= 2.5A Zg= ZI= 50 ohm Po V gs -Ids CHARACTERISTICS 2 18 16 14 Idd +25°C 10 8 6 4 2 0 2 3 Vgs (V) 4 +75°C -25°C V ds =10V Tc =-25~+75°C 12 Idd( A ) Ids ( A ) 10 8 6 4 2 0 RD60HUF1 MITSUBISHI ELECTRIC 3/7 10 Jan 2006 ηd( %) 60 60 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD60HUF1 RoHS Compliance, TEST CIRCUIT(f=520MHz) Silicon MOSFET Power Transistor 520MHz,60W Vgg C1 Vdd 9.1kOHM 100OHM L3 C3 8.2kOHM L1 RF-in 56pF 15pF 18pF 520MHz RD60HUF1 L2 C2 RF-OUT 56pF 15pF 24pF 4 10 12 90 100 100 Note:Board material-Teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm 18pF 6 8 90 14 12 8 C1:2200pF 10uf in parallel C2:2200pF*2 in parallel C3:2200pF,330uF in parallel L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2:2Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire RD60HUF1 MITSUBISHI ELECTRIC 4/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD60HUF1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=520MHz Zout f=520MHz Zin f=440MHz Zout f=300MHz Zout f=440MHz Zin f=300MHz Zin Zo=10Ω Zin , Zout f (MHz) 300 440 520 Zin (ohm) 1.16-j0.06 1.18+j0.09 1.15+j0.86 Zout (ohm) 0.83+j0.14 1.20+j0.58 1.05+j1.09 Conditions Po=70W, Vdd=12.5V,Pin=10W Po=65W, Vdd=12.5V,Pin=10W Po=60W, Vdd=12.5V,Pin=10W RD60HUF1 MITSUBISHI ELECTRIC 5/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD60HUF1 S12 (mag) 0.012 0.011 0.010 0.008 0.008 0.007 0.005 0.004 0.003 0.002 0.002 0.003 0.003 0.005 0.006 0.006 0.007 0.009 0.009 0.010 0.010 0.012 (ang) 8.6 -10.8 -25.0 -32.2 -39.0 -41.7 -42.3 -40.2 -21.8 -4.8 38.1 38.4 49.4 53.8 54.4 50.3 51.8 56.2 49.6 46.5 47.2 43.8 (mag) 0.788 0.811 0.845 0.869 0.877 0.893 0.930 0.930 0.945 0.957 0.956 0.962 0.965 0.963 0.971 0.973 0.972 0.980 0.978 0.975 0.983 0.984 S22 (ang) -166.6 -177.2 -178.5 178.3 177.0 175.6 172.3 169.2 166.0 162.4 159.5 156.5 153.4 150.1 147.4 144.5 141.5 138.4 136.2 133.1 130.4 128.0 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W RD60HUF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. [MHz] 10 50 100 150 175 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 (mag) 0.909 0.910 0.923 0.935 0.944 0.949 0.957 0.961 0.964 0.969 0.974 0.975 0.977 0.978 0.982 0.983 0.979 0.982 0.985 0.980 0.981 0.981 (ang) -156.8 -177.1 178.6 175.5 173.9 172.5 169.2 166.2 163.3 159.8 157.0 153.8 151.0 147.8 145.1 141.9 139.5 136.7 133.7 130.9 128.0 124.9 S21 (mag) (ang) 30.933 98.0 6.014 75.6 2.796 60.1 1.678 46.1 1.351 40.5 1.109 36.2 0.804 27.2 0.583 18.3 0.450 12.0 0.368 6.8 0.296 2.3 0.238 -3.0 0.209 -6.1 0.178 -14.1 0.155 -17.5 0.136 -19.6 0.113 -17.5 0.104 -20.2 0.103 -33.7 0.084 -27.4 0.083 -35.1 0.071 -28.7 RD60HUF1 MITSUBISHI ELECTRIC 6/7 10 Jan 2006 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD60HUF1 RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,60W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. RD60HUF1 MITSUBISHI ELECTRIC 7/7 10 Jan 2006