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RM100D2Z-40

RM100D2Z-40

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RM100D2Z-40 - HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE - Mitsubishi Electric Semiconduct...

  • 数据手册
  • 价格&库存
RM100D2Z-40 数据手册
MITSUBISHI DIODE MODULES RM100D2Z-40 HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE RM100D2Z-40 • IF(AV) • VRRM Average forward current .......... 100A Repetitive peak reverse voltage ..................... 2000V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor controllers, Battery DC power supplies, DC power supplies for control panels, and other general DC power equipment OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 80 2–φ6.5 12.5 26 K 1A2 SR1 A1 SR2 K2 16.5 23 23 2–M5 6.5 LABEL 21 30 Feb.1999 MITSUBISHI DIODE MODULES RM100D2Z-40 HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage Voltage class 40 2000 2100 1600 Unit V V V Symbol IF (RMS) IF (AV) IFSM I2t f Tj Tstg Viso Parameter RMS forward current Average forward current Surge (non-repetitive) forward current I2t for fusing Maximum operating frequency Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M5 Conditions Single-phase, half-wave 180° conduction, TC=87°C One half chcle at 60Hz, peak value Value for one cycle of surge current Ratings 155 100 2000 1.7 × 104 1000 –40~+125 –40~+125 3000 1.47~1.96 15~20 1.96~2.94 20~30 160 Unit A A A A2s Hz °C °C V N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M6 — Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM VFM Rth (j-c) Rth (c-f) — Parameter Repetitive reverse current Forward voltage Thermal resistance Contact thermal resistance Insulation resistance Tj=125°C, VRRM applied Tj=25°C, IFM=320A, instantaneous meas. Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Test conditions Min. — — — — 10 Typ. — — — — — Max. 15 1.35 0.3 0.2 — Unit mA V °C/ W °C/ W MΩ Feb.1999 MITSUBISHI DIODE MODULES RM100D2Z-40 HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 10 3 7 Tj=25°C 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.6 ALLOWABLE SURGE (NON-REPETITIVE) FORWARD CURRENT 2000 SURGE (NON-REPETITIVE) FORWARD CURRENT (A) FORWARD CURRENT (A) 1600 1200 800 400 1.0 1.4 1.8 2.2 2.6 0 1 23 5 7 10 20 30 50 70100 FORWARD VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM POWER DISSIPATION 200 RESISTIVE, INDUCTIVE LOAD TRANSIENT THERMAL IMPEDANCE (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 0.40 0.35 POWER DISSIPATION (W) 160 0.30 0.25 0.20 0.15 0.10 0.05 0 10 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 7 10 0 SINGLE-PHASE OPERATION 120 THREE-PHASE OPERATION 80 DC OPERATION 40 0 0 40 80 120 160 200 TIME (s) AVERAGE FORWARD CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE FORWARD CURRENT 130 120 RESISTIVE, INDUCTIVE LOAD CASE TEMPERATURE (°C) 110 100 90 80 70 60 50 0 20 40 60 THREE-PHASE OPERATION SINGLE PHASE OPERATION DC OPERATION 80 100 120 140 160 AVERAGE FORWARD CURRENT (A) Feb.1999
RM100D2Z-40 价格&库存

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