MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM1200DB-66S
High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE
RM1200DB-66S
● IF ................................................................ 1200A ● VRRM ...................................................... 3300V ● Insulated Type ● 2-element in a Pack ● Copper Baseplate
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130 57 ±0.25 57 ±0.25 4-M8 NUTS 29.5
20
>PPS<
K1 (C)
K2 (C)
K1
C
K2
C
124 ±0.25
High Voltage Diode Module
38 +1.0 0
5
LABEL
CM
A1
140
40
E
A2
E
15
C E G
A1 (E)
A2 (E)
CIRCUIT DIAGRAM 6-φ7 MOUNTING HOLES
61.5 18
Screwing depth min. 16.5
May 2009 1
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM1200DB-66S
High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE
MAXIMUM RATINGS
Symbol VRRM VRSM VR(DC) IF IFSM I2t Viso Tj Top Tstg Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage DC forward current Surge forward current Current-squared, time integration Isolation voltage Junction temperature Operating temperature Storage temperature Conditions Tj = 25 °C Tj = 25 °C Tj = 25 °C TC = 25 °C Tj = 25 °C start, tw = 8.3 ms Half sign wave Tj = 25 °C start, tw = 8.3 ms Half sign wave Charged part to the baseplate RMS sinusoidal, 60Hz 1min. — — — Ratings 3300 3300 2200 1200 9600 384 6000 –40 ~ +150 –40 ~ +125 –40 ~ +125 Unit V V V A A kA2s V °C °C °C
ELECTRICAL CHARACTERISTICS
Symbol IRRM VFM trr Irr Qrr Erec Item Repetitive reverse current Forward voltage (Note 1) VRM = VRRM IF = 1200 A Conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Min — — — — — — — — Limits Typ — 3 2.80 2.70 0.75 1600 850 0.75 Max 5 30 — — — — — — Unit mA V µs A µC J/P
Reverse recovery time VR = 1650 V, IF = 1200 A Reverse recovery current di/dt = –3700 A/µs Reverse recovery charge Reverse recovery energy (Note 2) Ls=100nH, Tj = 125 °C
Note 1. It doesn't include the voltage drop by internal lead resistance. 2. Erec is the integral of 0.1VR x 0.1Irr x dt.
High Voltage Diode Module
May 2009 2
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM1200DB-66S
High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol Rth(j-c) Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to case (per 1/2 module) Case to Fin, λgrease = 1W/m·K D(c-f)=100µm, (per 1/2 module) Min — — Limits Typ — 16.0 Max 18.0 — Unit K/kW K/kW
MECHANICAL CHARACTERISTICS
Symbol Mt Ms m CTI Da Ds LP CE RCC’+EE’ Item Mounting torque Mass Comparative tracking index Clearance Creepage distance Internal inductance Internal lead resistance Conditions M8: Main terminals screw M6: Mounting screw — — — — — Tc = 25 °C Min 7.0 3.0 — 600 19.5 32 — — Limits Typ — — 1.5 — — — 35 0.25 Max 13.0 6.0 — — — — — — Unit N·m N·m kg — mm mm nH mΩ
PERFORMANCE CURVES
FORWARD CHARACTERISTICS (TYPICAL) 2500
REVERSE RECOVERY ENERGY Erec (J/p)
REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) 1.2 VR = 1650V, di/dt = 3700A/µs Tj = 125°C, LS = 100nH 1.0
2000
FORWARD CURRENT IF (A)
0.8
1500
0.6
1000
0.4
500 Tj = 25°C Tj = 125°C 0 1 2 3 4 5 6
0.2
0
0
0
500
1000
1500
2000
2500
FORWARD VOLTAGE VF (V)
FORWARD CURRENT IF (A)
High Voltage Diode Module
May 2009 3
MITSUBISHI HIGH VOLTAGE DIODE MODULE
RM1200DB-66S
High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE
REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102
7 5
REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 104
7 5
3000 VR ≤ 2200V, di/dt ≤ 4800A/µs Tj = 125°C
REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY CURRENT Irr (A)
VR = 1650V, di/dt = 3700A/µs Tj = 125°C, LS = 100nH Irr
REVERSE RECOVERY TIME trr (µs)
3 2
3 2
2500
101
7 5 3 2
103
7 5 3 2
2000
1500
100
7 5 3 2
102 trr
7 5 3 2 7 103 7 104
1000
500
10-1 2 10
101
2
3 45
2
3 45
0
0
1000
2000
3000
4000
FORWARD CURRENT IF (A)
REVERSE VOLTAGE VR (V)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 1.2
NORMALIZED TRANSIENT THERMAL IMPEDANCE
Rth(j–c) = 18K/kW 1.0
0.8
Z th( j –c ) ( t ) =
Ri [ K/kW]
Σ Ri 1–exp i=1
1 0.0059 0.0002 2 0.0978 0.0074
n
0.6
τ i [sec]
0.4
0.2
0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s)
High Voltage Diode Module
4
–
t
ti
3 0.6571 0.0732
4 0.2392 0.4488
May 2009
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