RM200DG-130S

MITSUBISHI HIGH VOLTAGE DIODE MODULE RM200DG-130S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE RM200DG-130S ● IF ................................................................... 200A ● VRRM ...................................................... 6500V ● High Insulated Type ● 2-element in a Pack ● AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 ±0.5 57 ±0.25 57 ±0.25 4-M8 NUTS 40.4 ±0.5 17 ±0.1 22 ±0.3 4 2 4 (K) 2 (K) 124 ±0.25 3 >PET+PBT< 1 140 ±0.5 44 ±0.3 3 (A) 1 (A) 6-φ7 MOUNTING HOLES 34.4 ±0.5 CIRCUIT DIAGRAM 61.2 ±0.5 16.5 ±0.3 Screwing depth min. 16.5 High Voltage Diode Module 5 ±0.15 48 +1.0 0 May 2009 1 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM200DG-130S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VRRM Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage DC forward current Surge forward current Current-squared, time integration Isolation voltage Partial discharge extinction voltage Junction temperature Operating temperature Storage temperature Conditions Tj = –40 °C Tj = +25 °C Tj = +125 °C Tj = –40 °C Tj = +25 °C Tj = +125 °C Tj = 25 °C TC = 25 °C Tj = 25 °C start, tw = 8.3 ms Half sign wave Tj = 25 °C start, tw = 8.3 ms Half sign wave Charged part to the baseplate RMS sinusoidal, 60Hz 1min. RMS sinusoidal, 60Hz, QPD ≤ 10PC — — — Ratings 5800 6300 6500 5800 6300 6500 4500 200 1600 11 10200 5100 –40 ~ +150 –40 ~ +125 –40 ~ +125 Unit V VRSM VR(DC) IF IFSM I 2t Viso Ve Tj Top Tstg V V A A kA2s V V °C °C °C ELECTRICAL CHARACTERISTICS Symbol IRRM VFM trr Irr Qrr Erec Item Repetitive reverse current Forward voltage (Note 1) VRM = VRRM IF = 200 A VR = 3600 V, IF = 200 A di/dt = –670 A/µs Ls=100nH, Tj = 125 °C Conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Min — — — — — — — — Limits Typ — 3 4.00 3.60 1.0 420 300 0.7 Max 3 30 — — — — — — Unit mA V µs A µC J/P Reverse recovery time Reverse recovery current Reverse recovery charge Reverse recovery energy (Note 2) Note 1. It doesn't include the voltage drop by internal lead resistance. 2. Erec is the integral of 0.1VR x 0.1Irr x dt. High Voltage Diode Module May 2009 2 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM200DG-130S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c) Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to case (per 1/2 module) Case to Fin, λgrease = 1W/m·K D(c-f)=100µm, (per 1/2 module) Min — — Limits Typ — 48.0 Max 66.0 — Unit K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Mt Ms m CTI Da Ds LP CE RCC’+EE’ Item Mounting torque Mass Comparative tracking index Clearance Creepage distance Internal inductance Internal lead resistance Conditions M8: Main terminals screw M6: Mounting screw — — — — — Tc = 25 °C Min 7.0 3.0 — 600 26 56 — — Limits Typ — — 1.0 — — — 44 0.27 Max 15.0 6.0 — — — — — — Unit N·m N·m kg — mm mm nH mΩ PERFORMANCE CURVES FORWARD CHARACTERISTICS (TYPICAL) 400 REVERSE RECOVERY ENERGY Erec (J/p) REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) 1.2 VR = 3600V, di/dt = 670A/µs Tj = 125°C, LS = 100nH 1.0 FORWARD CURRENT IF (A) 300 0.8 200 0.6 0.4 100 0.2 0 Tj = 25°C Tj = 125°C 0 1 2 3 4 5 6 7 8 0 0 100 200 300 400 500 FORWARD VOLTAGE VF (V) FORWARD CURRENT IF (A) High Voltage Diode Module May 2009 3 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM200DG-130S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 7 5 REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 104 7 5 500 VR ≤ 4500V, di/dt ≤ 1000A/µs Tj = 125°C REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY CURRENT Irr (A) VR = 3600V, di/dt = 670A/µs Tj = 125°C, LS = 100nH REVERSE RECOVERY TIME trr (µs) 3 2 3 2 400 101 7 5 3 2 103 Irr 7 5 3 2 300 100 7 5 3 2 trr 200 102 7 5 3 2 100 10-1 1 10 2 3 45 7 102 2 3 45 7 103 101 0 0 2000 4000 6000 8000 FORWARD CURRENT IF (A) REVERSE VOLTAGE VR (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 1.2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Rth(j–c) = 66K/kW 1.0 0.8 Z th( j –c ) ( t ) = Ri [ K/kW] Σ Ri 1–exp i=1 1 0.0059 0.0002 2 0.0978 0.0074 n 0.6 τ i [sec] 0.4 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) High Voltage Diode Module 4   – t ti   3 0.6571 0.0732 4 0.2392 0.4488 May 2009