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RM20TPM-H_02

RM20TPM-H_02

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RM20TPM-H_02 - MEDIUM POWER GENERAL USE INSULATED TYPE - Mitsubishi Electric Semiconductor

  • 数据手册
  • 价格&库存
RM20TPM-H_02 数据手册
MITSUBISHI DIODE MODULES RM20TPM-H MEDIUM POWER GENERAL USE INSULATED TYPE RM20TPM-H q q IO VRRM q q DC output current ....................... 40A Repetitive peak reverse voltage ................ 800V 3 phase bridge Insulated Type APPLICATION AC motor controllers, DC motor controllers, Battery DC power supplies, DC power supplies for control panels, and other general DC power equipment OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 13.5 15 15 8 2-φ4.5 14.5 28 57 70 10 5-M4 LABEL 6 22 18 20 40 Mar.2002 MITSUBISHI DIODE MODULES RM20TPM-H MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM Ea Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Recommended AC input voltage Voltage class H 800 900 220 Unit V V V Symbol IO IFSM I2t f Tj Tstg Viso Parameter DC output current Surge (non-repetitive) forward current I2t for fusing Maximum operating frequency Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M4 Conditions Three-phase full wave rectifying circuit, TC=125°C One half cycle at 60Hz, peak value Value for one cycle of surge current Ratings 40 400 4.2 × 103 1000 –40~+150 –40~+125 2500 0.98~1.47 10~15 0.98~1.47 10~15 100 Unit A A A2s Hz °C °C V N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M4 — Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM VFM Rth (j-c) Rth (c-f) — Parameter Repetitive reverse current Forward voltage Thermal resistance Contact thermal resistance Insulation resistance Test conditions Tj=150°C, VRRM applied Tj=25°C, IFM=40A, instantaneous meas. Junction to case Case to fin, conductive grease applied Measured with a 500V megohmmeter between main terminal and case Min. — — — — 10 Typ. — — — — — Max. 10 1.2 0.33 0.09 — Unit mA V °C/ W °C/ W MΩ Mar.2002 MITSUBISHI DIODE MODULES RM20TPM-H MEDIUM POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 3 2 ALLOWABLE SURGE (NON-REPETITIVE) FORWARD CURRENT 500 FORWARD CURRENT (A) 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 0.6 SURGE (NON-REPETITIVE) FORWARD CURRENT (A) Tj=25°C 400 300 200 100 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 23 5 7 10 20 30 50 70100 FORWARD VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM POWER DISSIPATION 70 TRANSIENT THERMAL IMPEDANCE (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 2 3 0.35 POWER DISSIPATION (W) 0.30 0.25 0.20 0.15 0.10 0.05 0 10 –3 2 3 5 7 10 –2 2 3 5 710 –1 2 3 5 710 0 60 50 40 30 20 10 0 0 10 20 30 40 50 TIME (s) DC OUTPUT CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. DC OUTPUT CURRENT 130 CASE TEMPERATURE (°C) 120 110 100 90 80 70 60 0 10 20 30 40 50 DC OUTPUT CURRENT (A) Mar.2002
RM20TPM-H_02 价格&库存

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