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RM30DZ-2H

RM30DZ-2H

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RM30DZ-2H - HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE - Mitsubishi Electric Semiconductor

  • 数据手册
  • 价格&库存
RM30DZ-2H 数据手册
MITSUBISHI DIODE MODULES RM30DZ/CZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE RM30DZ/CZ-24,-2H Average forward current ............ 30A Repetitive peak reverse voltage ........... 1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 • IF(AV) • VRRM APPLICATION AC motor controllers, DC motor controllers, Battery DC power supplies, DC power supplies for control panels, and other general DC power equipment OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 80 2–φ6.5 12.5 (DZ) A1K2 26 K1 A2 SR1 16.5 23 23 3–M5 (CZ) A1 SR1 K1K2 SR2 A2 SR2 6.5 LABEL 21 30 Feb.1999 MITSUBISHI DIODE MODULES RM30DZ/CZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage Voltage class 24 1200 1350 960 2H 1600 1700 1280 Unit V V V Symbol IF (RMS) IF (AV) IFSM I2t f Tj Tstg Viso Parameter RMS forward current Average forward current Surge (non-repetitive) forward current I2t for fusing Maximum operating frequency Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M5 Conditions Single-phase, half-wave 180° conduction, TC=116°C One half chcle at 60Hz, peak value Value for one cycle of surge current Ratings 47 30 600 1.5 × 103 1000 –40~+150 –40~+125 2500 1.47~1.96 15~20 1.96~2.94 20~30 160 Unit A A A A2s Hz °C °C V N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M6 — Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM VFM Rth (j-c) Rth (c-f) — Parameter Repetitive reverse current Forward voltage Thermal resistance Contact thermal resistance Insulation resistance Tj=150°C, VRRM applied Tj=25°C, IFM=90A, instantaneous meas. Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Test conditions Min. — — — — 10 Typ. — — — — — Max. 15 1.5 0.8 0.2 — Unit mA V °C/ W °C/ W MΩ Feb.1999 MITSUBISHI DIODE MODULES RM30DZ/CZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.6 ALLOWABLE SURGE (NON-REPETITIVE) FORWARD CURRENT 800 700 Tj=25°C SURGE (NON-REPETITIVE) FORWARD CURRENT (A) FORWARD CURRENT (A) 600 500 400 300 200 100 1.0 1.4 1.8 2.2 2.6 0 1 23 5 7 10 20 30 50 70100 FORWARD VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM POWER DISSIPATION 80 70 MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 710 1 2 3 1.0 TRANSIENT THERMAL IMPEDANCE (°C/W) POWER DISSIPATION (W) RESISTIVE, INDUCTIVE LOAD DC OPERATION 0.8 60 50 0.6 SINGLE-PHASE OPERATION THREE-PHASE 40 OPERATION 30 20 10 0.4 0.2 0 10 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 7 10 0 0 0 10 20 30 40 50 TIME (s) AVERAGE FORWARD CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE FORWARD CURRENT 160 RESISTIVE, INDUCTIVE LOAD CASE TEMPERATURE (°C) 140 DC OPERATION 120 THREE-PHASE OPERATION SINGLE-PHASE OPERATION 100 80 60 0 10 20 30 40 50 AVERAGE FORWARD CURRENT (A) Feb.1999
RM30DZ-2H 价格&库存

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