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RM50

RM50

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RM50 - MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE - Mitsubishi Electric Semiconductor

  • 数据手册
  • 价格&库存
RM50 数据手册
MITSUBISHI FAST RECOVERY DIODE MODULES RM50DA/CA/C1A-XXS MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE RM50DA/CA/C1A-XXS DC current .................................. 50A Repetitive peak reverse voltage ...................... 300/600V • trr Reverse recovery time ............. 0.4µs • Insulated Type • IDC • VRRM APPLICATION Free wheel use, Welder OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 53.5 43.3 16 CA 5.3 C1A 36.5 18 14 DA R6 φ5.3 8 3–M4 33 3.5 3.5 7 24 4.5 LABEL 22 Feb.1999 MITSUBISHI FAST RECOVERY DIODE MODULES RM50DA/CA/C1A-XXS MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VDRM VR Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage (Tj=25°C, unless otherwise noted) Voltage class 6 300 360 240 12 600 720 480 Unit V V V Symbol IDC IFSM I2t Tj Tstg Viso DC current Parameter Resistive load, TC=93°C Conditions Ratings 50 1000 4.2×103 –40~150 –40~125 Unit A A A2s °C °C V N·m kg·cm N·m kg·cm g Surge (non-repetitive) forward current I2t for fusing Junction temperature Storage temperature Isolution voltage One half cycle at 60Hz, peak value Value for one cycle of surge current Charged part to case Main terminal screw M4 2500 0.98~1.47 10~15 1.47~1.96 15~20 90 — Mounting torque Mounting screw M5 — Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM VFM trr Qrr trr Qrr Rth (j-c) Rth (c-f) Parameter Repetitive reverse current Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance 12 class: VR=300V Tj=150°C, VRRM applied Tj=25°C, IFM=50A, instantaneous meas. IFM=50A, di/dt=–100A/µs, VR=150/300V*1, Tj=25°C IFM=50A, di/dt=–150A/µs, VR=150/300V*1, Tj=150°C Junction to case Case to fin, conductive grease applied Test conditions Min. — — — — — — — — Typ. — 1.7 — — — — — — Max. 20 1.8 0.2 1.5 0.4 4.5 0.6 0.3 Unit mA V µs µC µs µC °C/ W °C/ W *1 6 class: VR=150V Feb.1999 MITSUBISHI FAST RECOVERY DIODE MODULES RM50DA/CA/C1A-XXS MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.2 MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 4 57 10 1 2 3 4 5 1.0 0.8 Zth (j–c) (°C/W) Tj=25°C FORWARD CURRENT (A) 0.6 0.4 0.2 0 10 –3 2 3 4 5 7 10 –2 2 3 4 5 710 –1 2 3 4 5 7 10 TIME (s) 1.0 1.8 2.6 3.4 4.2 FORWARD VOLTAGE (V) ALLOWABLE SURGE (NON-REPETITIVE) FORWARD CURRENT 1000 SURGE (NON-REPETITIVE) FORWARD CURRENT (A) REVERSE RECOVERY CHARACTERISTICS VS. FORWARD CURRENT (TYPICAL) 10 2 7 5 3 2 10 1 7 5 3 2 Qrr 10 1 800 10 0 Irr (A) 600 trr 400 200 0 1 2 3 4 5 7 10 20 30 40 50 70100 10 –1 10 0 7 VR=150/300V 5 di/dt=–100A/µs 3 Tj=25°C 2 Tj=150°C 10 –1 10 –2 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT (A) CONDUCTION TIME (CYCLES AT 60Hz) REVERSE RECOVERY CHARACTERISTICS VS. –di/dt (TYPICAL) 10 2 7 VR=150/300V 5 IF=50A Tj=25°C 3 2 Tj=150°C 10 1 7 5 3 2 10 0 7 5 3 2 10 1 Irr 10 0 trr (µs), Qrr (µC) Irr (A) Qrr trr 10 –1 10 –2 10 –1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 –di/dt (A/µs) Feb.1999 trr (µs), Qrr (µC) Irr

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