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RM500DZ-M

RM500DZ-M

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RM500DZ-M - HIGH POWER GENERAL USE INSULATED TYPE - Mitsubishi Electric Semiconductor

  • 数据手册
  • 价格&库存
RM500DZ-M 数据手册
MITSUBISHI DIODE MODULES RM500DZ/UZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE RM500DZ/UZ-M,-H,-24,-2H • IF(AV) • VRRM Average forward current .......... 500A Repetitive peak reverse voltage .............. 400/800/1200/1600V • DOUBLE ARMS • Insulated Type (DZ Type) APPLICATION AC motor controllers, DC motor controllers, Battery DC power supplies, DC power supplies for control panels, and other general DC power equipment OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm A1 K1 K2 A2 (DZ) A1 60 50 36 16 SR1 3–φ6.5 4–M8 24 23 35 80±0.2 24 44 180 24 35 80±0.2 A1 SR1 24 (UZ) K1 K2 A2 SR2 K1 K2 A2 SR2 LABEL (DZ Type) 36 44 50 (Bold line is connective bar.) Sep.2000 MITSUBISHI DIODE MODULES RM500DZ/UZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage Voltage class M 400 480 320 H 800 960 640 24 1200 1350 960 2H 1600 1700 1280 Unit V V V Symbol IF (RMS) IF (AV) IFSM I2t f Tj Tstg Viso Parameter RMS forward current Average forward current Surge (non-repetitive) forward current I2t for fusing Maximum operating frequency Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M8 Conditions Single-phase, half-wave 180° conduction, TC=90°C One half chcle at 60Hz, peak value Value for one cycle of surge current Ratings 785 500 10000 4.2 × 105 1000 –40~+150 –40~+125 2500 8.83~10.8 90~110 1.97~3.92 20~40 1100 Unit A A A A2s Hz °C °C V N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M6 — Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM VFM Rth (j-c) Rth (c-f) — Parameter Repetitive reverse current Forward voltage Thermal resistance Contact thermal resistance Insulation resistance Tj=150°C, VRRM applied Tj=25°C, IFM=1500A, instantaneous meas. Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Test conditions Min. — — — — 10 Typ. — — — — — Max. 40 1.25 0.1 0.08 — Unit mA V °C/ W °C/ W MΩ Sep.2000 MITSUBISHI DIODE MODULES RM500DZ/UZ-M,-H,-24.-2H HIGH POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 0.8 ALLOWABLE SURGE (NON-REPETITIVE) FORWARD CURRENT 10000 Tj=25°C SURGE (NON-REPETITIVE) FORWARD CURRENT (A) FORWARD CURRENT (A) 8000 6000 4000 2000 1.0 1.2 1.4 1.6 1.8 0 1 23 5 7 10 20 30 50 70100 FORWARD VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM POWER DISSIPATION 800 700 MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 0.10 TRANSIENT THERMAL IMPEDANCE (°C/W) POWER DISSIPATION (W) RESISTIVE, INDUCTIVE LOAD SINGLE-PHASE OPERATION THREE-PHASE OPERATION 0.08 600 500 400 300 200 100 0.06 DC OPERATION 0.04 0.02 0 10 –3 2 3 5 7 10 –2 2 3 5 7 10 –1 2 3 5 7 10 0 0 0 100 200 300 400 500 600 700 800 TIME (s) AVERAGE FORWARD CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE FORWARD CURRENT 150 RESISTIVE, INDUCTIVE LOAD CASE TEMPERATURE (°C) 130 DC OPERATION 110 90 SINGLE-PHASE OPERATION 70 THREE-PHASE OPERATION 0 200 400 600 800 50 AVERAGE FORWARD CURRENT (A) Sep.2000
RM500DZ-M 价格&库存

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