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RM50D2Z-40

RM50D2Z-40

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RM50D2Z-40 - HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE - Mitsubishi Electric Semiconducto...

  • 数据手册
  • 价格&库存
RM50D2Z-40 数据手册
MITSUBISHI DIODE MODULES RM50D2Z-40 HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE RM50D2Z-40 Average forward current ............ 50A Repetitive peak reverse voltage ..................... 2000V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 • IF(AV) • VRRM APPLICATION AC motor controllers, DC motor controllers, Battery DC power supplies, DC power supplies for control panels, and other general DC power equipment OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 80 2–φ6.5 12.5 26 K1A2 A1 K2 16.5 23 23 3–M5 SR1 SR2 6.5 LABEL 21 30 Feb.1999 MITSUBISHI DIODE MODULES RM50D2Z-40 HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage Voltage class 40 2000 2100 1600 Unit V V V Symbol IF (RMS) IF (AV) IFSM I2t f Tj Tstg Viso Parameter RMS forward current Average forward current Surge (non-repetitive) forward current I2t for fusing Maximum operating frequency Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M5 Conditions Single-phase, half-wave 180° conduction, TC=86°C One half chcle at 60Hz, peak value Value for one cycle of surge current Ratings 78 50 1000 4.2 × 103 1000 –40~+125 –40~+125 3000 1.47~1.96 15~20 1.96~2.94 20~30 160 Unit A A A A2s Hz °C °C V N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M6 — Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM VFM Rth (j-c) Rth (c-f) — Parameter Repetitive reverse current Forward voltage Thermal resistance Contact thermal resistance Insulation resistance Tj=125°C, VRRM applied Tj=25°C, IFM=150A, instantaneous meas. Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Test conditions Min. — — — — 10 Typ. — — — — — Max. 15 1.35 0.6 0.2 — Unit mA V °C/ W °C/ W MΩ Feb.1999 MITSUBISHI DIODE MODULES RM50D2Z-40 HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.4 ALLOWABLE SURGE (NON-REPETITIVE) FORWARD CURRENT 1000 Tj=25°C SURGE (NON-REPETITIVE) FORWARD CURRENT (A) FORWARD CURRENT (A) 800 600 400 200 0.8 1.2 1.6 2.0 2.4 0 1 23 5 7 10 20 30 50 70100 FORWARD VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM POWER DISSIPATION 100 MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 0.80 TRANSIENT THERMAL IMPEDANCE (°C/W) 0.70 RESISTIVE, INDUCTIVE LOAD DC OPERATION SINGLE-PHASE OPERATION POWER DISSIPATION (W) 80 0.60 0.50 0.40 0.30 0.20 60 THREE-PHASE OPERATION 40 20 0.10 0 10 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 7 10 0 0 0 10 20 30 40 50 60 70 80 TIME (s) AVERAGE FORWARD CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE FORWARD CURRENT 130 120 RESISTIVE, INDUCTIVE LOAD CASE TEMPERATURE (°C) 110 100 90 80 70 60 50 0 10 20 30 40 SINGLEPHASE OPERATION 50 60 70 80 THREE-PHASE OPERATION DC OPERATION AVERAGE FORWARD CURRENT (A) Feb.1999
RM50D2Z-40 价格&库存

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