0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
RM50HG-12S_01

RM50HG-12S_01

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RM50HG-12S_01 - FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE - Mitsubishi...

  • 数据手册
  • 价格&库存
RM50HG-12S_01 数据手册
MITSUBISHI FAST RECOVERY DIODE MODULES RM50HG-12S HIGH SPEED SWITCHING USE NON-INSULATED TYPE RM50HG-12S DC current .................................. 50A Repetitive peak reverse voltage ................ 600V • trr Reverse recovery time ............. 0.2µs • ONE ARM • Non-Insulated Type • IDC • VRRM APPLICATION For snubber circuit (IPM or IGBT module) OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 20.5MAX. φ3.2±0.2 6±0.2 5±0.3 Non-Isolation side (metal) 4 2.5 26±0.5 1 1±0.2 5.45±0.5 2 3 2±0.3 3±0.3 20MIN. 2.5±0.3 1 3 2 4 5.45±0.5 0.6±0.2 Sep.2001 MITSUBISHI FAST RECOVERY DIODE MODULES RM50HG-12S HIGH SPEED SWITCHING USE NON-INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VR (DC) Parameter Repetitive peak reverse voltage Reverse DC voltage (Tj=25°C) Voltage class 12 600 480 Unit V V Symbol IDC IFSM I2t Tj Tstg Viso — — DC current Parameter Resistive load, TC=80°C Conditions ➀, ➂ Collective of terminal One half cycle at 60Hz, peak value ➀, ➂ Collective of terminal Value for one cycle surge current Ratings 50 1000 — –40~+150 –40~+125 Unit A A A2s °C °C V N·m kg·cm g Surge (non-repetitive) forward current I2t for fusing Junction temperature Storage temperature Isolation voltage Mounting torque Weight Charged part to case Mounting screw M3 Typical value — 0.59~0.98 6~10 5 ELECTRICAL CHARACTERISTICS Limits Symbol IRRM VFM trr Qrr Rth (j-c) Rth (c-f) Parameter Repetitive reverse current Forward voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Test conditions Tj=25/125°C, VRRM applied Tj=25°C, IFM=200A, Instantaneous meas. IFM=200A, Tj=25°C, di/dt=– 1000A/µs, VR=300V Junction to case Case to fin, conductive grease applied Min. — — — — — — Typ. — — — — — — Max. 0.1/1.0 4.0 0.2 — 0.5 0.5 Unit mA V µs µC °C/ W °C/ W Sep.2001 MITSUBISHI FAST RECOVERY DIODE MODULES RM50HG-12S HIGH SPEED SWITCHING USE NON-INSULATED TYPE PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 10 3 7 5 3 2 10 2 7 5 3 2 10 1 1.0 2.0 3.0 4.0 5.0 6.0 MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 2 0.5 Tj=25°C 0.4 FORWARD CURRENT (A) Zth (j-c) (°C/W) FORWARD VOLTAGE (V) 0.3 0.2 0.1 0 10 –3 2 3 5 7 10 –2 2 3 5 7 10 –1 2 3 5 7 10 0 TIME (s) RATED SURGE (NON-REPETITIVE) FORWARD CURRENT 1000 SURGE (NON-REPETITIVE) FORWARD CURRENT (A) 800 600 400 200 0 1 23 5 7 10 20 30 50 70100 CONDUCTION TIME (CYCLES AT 60Hz) Sep.2001
RM50HG-12S_01 价格&库存

很抱歉,暂时无法提供与“RM50HG-12S_01”相匹配的价格&库存,您可以联系我们找货

免费人工找货