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RM50TC-H

RM50TC-H

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RM50TC-H - MEDIUM POWER GENERAL USE INSULATED TYPE - Mitsubishi Electric Semiconductor

  • 数据手册
  • 价格&库存
RM50TC-H 数据手册
MITSUBISHI DIODE MODULES RM50TC-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE RM50TC-M,-H,-24,-2H • IO • VRRM DC output current .................... 100A Repetitive peak reverse voltage .......... 400/800/1200/1600V • 3 phase bridge • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers , DC motor controllers, Battery DC power supplies, DC power supplies for control panels, and other general DC power equipment OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 20 20 2–φ5.5 11.5 10.5 10 30 68 80 5–M5 LABEL 8 26.5 29.5 40 Feb.1999 MITSUBISHI DIODE MODULES RM50TC-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM Ea Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Recommended AC input voltage Voltage class M 400 480 110 H 800 960 220 24 1200 1350 370 2H 1600 1700 440 Unit V V V Symbol IO IFSM I2t f Tj Tstg Viso Parameter DC output current Surge (non-repetitive) forward current I2t for fusing Maximum operating frequency Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M5 Conditions Three-phase full wave rectifying circuit, TC=102°C One half cycle at 60Hz, peak value Value for one cycle of surge current Ratings 100 1000 4.2 × 103 1000 –40~+150 –40~+125 2500 1.47~1.96 15~20 1.47~1.96 15~20 220 Unit A A A2s Hz °C °C V N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M5 — Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM VFM Rth (j-c) Rth (c-f) — Parameter Repetitive reverse current Forward voltage Thermal resistance Contact thermal resistance Insulation resistance Tj=150°C, VRRM applied Tj=25°C, IFM=100A, instantaneous meas. Junction to case Case to fin, conductive grease applied Measured with a 500V megohmmeter between main terminal and case Test conditions Min. — — — — 10 Typ. — — — — — Max. 10 1.2 0.2 0.06 — Unit mA V °C/ W °C/ W MΩ Feb.1999 MITSUBISHI DIODE MODULES RM50TC-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVE MAXIMUM FORWARD CHARACTERISTIC 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.6 ALLOWABLE SURGE (NON-REPETITIVE) FORWARD CURRENT 1000 Tj=25°C SURGE (NON-REPETITIVE) FORWARD CURRENT (A) FORWARD CURRENT (A) 800 600 400 200 0.8 1.0 1.2 1.4 2.0 0 1 23 5 7 10 20 30 50 70100 FORWARD VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM POWER DISSIPATION 250 MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 0.20 TRANSIENT THERMAL IMPEDANCE (°C/W) POWER DISSIPATION (W) RESISTIVE, INDUCTIVE LOAD 0.16 200 0.12 150 0.08 100 0.04 0 10 –3 2 3 5 7 10 –2 2 3 5 7 10 –1 2 3 5 7 10 0 50 0 0 20 40 60 80 100 TIME (s) DC OUTPUT CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. DC OUTPUT CURRENT 160 RESISTIVE, INDUCTIVE LOAD CASE TEMPERATURE (°C) 140 120 100 80 60 0 20 40 60 80 100 DC OUTPUT CURRENT (A) Feb.1999
RM50TC-H 价格&库存

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