MITSUBISHI FAST RECOVERY DIODE MODULE
RM600DY-66S
HVDi (High Voltage Diode) Module HIGH POWER SWITCHING USE INSULATED TYPE
RM600DY-66S
q IDC ................................................................ 600A q VRRM ...................................................... 3300V q Insulated type q 2-element in a pack
APPLICATION 3-level inverters, 3-level converters, DC choppers.
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
130 114 57 ± 0.25 57 ± 0.25 4-M8 NUTS (E) A1 K1 (C)
20
(E) A2
K2 (C)
K1
124 ± 0.25 140
C
K2
C
A1
E
A2
E
C
E
G
6-φ7 MOUNTING HOLES
40
CIRCUIT DIAGRAM
61.5 18
15
38
5
LABEL
30
Mar. 2003
MITSUBISHI FAST RECOVERY DIODE MODULE
RM600DY-66S
HVDi (High Voltage Diode) Module HIGH POWER SWITCHING USE INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)
Symbol VRRM VRSM VR(DC) Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage Voltage class 66 3300 3300 2200 Unit V V V
Symbol IDC IFSM I 2t Tj Tstg Viso — —
Item Output DC current Surge (non-repetitive) forward current I2t for fusing Junction temperature Storage temperature Isolation Voltage Mounting torque Mass
Conditions TC =25°C 1 cycle of half wave 60Hz, peak value, non-repetitive, Tj = 25°C start, VRM = 0V Value of one cycle surge current, tW = 8.3ms, Tj = 25°C start — — Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Typical value
Ratings 600 4800 9.60 ✕ 104 –40 ~ +150 –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 1.5
Unit A A A 2s °C °C V N·m N·m kg
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol IRRM VFM trr Qrr Rth(j-c) Rth(c-f) Item Repetitive reverse current Forward voltage Reverse recovery time Reverse recovery charge Termal resistance Contact thermal resistance Test conditions VRRM applied, VRM = VRRM IFM = 600A IFM = 600A, dif/dt = –1200A/µs, VR = 1650V Junction to case (Per 1/2 module) Case to fin, conductive grease applied (Per 1/2 module) Min — — — — — — Limits Typ — 3.50 — 150 — 0.024 Max 4 4.55 1.20 — 0.048 — Unit mA V µs µC K/W K/W
Mar. 2003
MITSUBISHI FAST RECOVERY DIODE MODULE
RM600DY-66S
HVDi (High Voltage Diode) Module HIGH POWER SWITCHING USE INSULATED TYPE
PERFORMANCE CURVES
81.563
MAXIMUM FORWARD CHARACTERISTIC 3 2 Tj = 25°C
FORWARD CURRENT (A)
Zth(j – c) (°C/W)
0 1 2 3 4 5
103 7 5 3 2 102 7 5 3
MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 101 7 Single Pulse 5 TC = 25°C 3 Rth(j – c) = 0.048K/ W 2 100 7 5 3 2 10–1 7 5 3 2 10–2 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 TIME (s)
FORWARD VOLTAGE (V)
REVERSE RECOVERY CHARACTERISTICS VS. FORWARD CURRENT (TYPICAL) 400
300
REVERSE RECOVERY CHARACTERISTICS VS. –di/dt (TYPICAL) 500 VCC = 1650V IF = 600A 400
Qrr (µC)
200
Qrr (µC)
VCC = 1650V, diF/dt = –1200A/µs Tj = 125°C Inductive load 0 300 600 900 1200 1500
300
200
100
100
0
0
0
500
1000
1500
2000
2500
FORWARD CURRENT (A)
–di/dt (A/µs)
Mar. 2003
很抱歉,暂时无法提供与“RM600DY-66S”相匹配的价格&库存,您可以联系我们找货
免费人工找货