RM600HE-90S

MITSUBISHI HIGH VOLTAGE DIODE MODULE RM600HE-90S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE RM600HE-90S ● IF ................................................................... 600A ● VRRM ...................................................... 4500V ● Insulated Type ● 1-element in a Pack ● AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 4-M8 NUTS 130 ±1.0 114 ±0.3 20.5 K K 90 ±1.0 74 ±0.3 20 40 ±0.5 A A 7 >PPS< (15) 7 (15) 61.5 ±0.5 24 4-φ6.5 MOUNTING HOLES (15) 39.5 K K 38 +1.0 0 29.7 LABEL 9.3 3 125.5 A A CIRCUIT DIAGRAM High Voltage Diode Module 85.5 May 2009 1 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM600HE-90S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) IF IFSM I 2t Viso Tj Top Tstg Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage DC forward current Surge forward current Current-squared, time integration Isolation voltage Junction temperature Operating temperature Storage temperature Conditions Tj = 25 °C Tj = 25 °C Tj = 25 °C TC = 25 °C Tj = 25 °C start, tw = 8.3 ms Half sign wave Tj = 25 °C start, tw = 8.3 ms Half sign wave Charged part to the baseplate RMS sinusoidal, 60Hz 1min. — — — Ratings 4500 4500 3000 600 4800 95.6 6000 –40 ~ +150 –40 ~ +125 –40 ~ +125 Unit V V V A A kA2s V °C °C °C ELECTRICAL CHARACTERISTICS Symbol IRRM VFM trr Irr Qrr Erec Item Repetitive reverse current Forward voltage (Note 1) VRM = VRRM IF = 600 A VR = 2250 V, IF = 600 A di/dt = –1400 A/µs Ls=100nH, Tj = 125 °C Conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Min — — — — — — — — Limits Typ — — 4.80 4.20 0.9 615 600 0.62 Max 5 30 — — 1.8 — — — Unit mA V µs A µC J/P Reverse recovery time Reverse recovery current Reverse recovery charge Reverse recovery energy (Note 2) Note 1. It doesn't include the voltage drop by internal lead resistance. 2. Erec is the integral of 0.1VR x 0.1Irr x dt. High Voltage Diode Module May 2009 2 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM600HE-90S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c) Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to case Case to Fin, λgrease = 1W/m·K D(c-f)=100µm Min — — Limits Typ — 15.0 Max 39.0 — Unit K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Mt Ms m Item Mounting torque Mass Conditions M8: Main terminals screw M6: Mounting screw — Min 6.67 2.84 — Limits Typ — — 0.66 Max 13.0 6.0 — Unit N·m N·m kg PERFORMANCE CURVES FORWARD CHARACTERISTICS (TYPICAL) 1200 REVERSE RECOVERY ENERGY Erec (J/p) REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) 1.2 VR = 2250V, Tj = 125°C LS = 100nH 1.0 1000 FORWARD CURRENT IF (A) 800 0.8 600 0.6 400 0.4 200 Tj = 25°C Tj = 125°C 0 2 4 6 8 0.2 0 0 0 200 400 600 800 1000 1200 1400 FORWARD VOLTAGE VF (V) FORWARD CURRENT IF (A) High Voltage Diode Module May 2009 3 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM600HE-90S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 7 5 REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 104 7 5 1500 VR ≤ 3000V, di/dt ≤ 2000A/µs Tj = 125°C REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY CURRENT Irr (A) VR = 2250V, Tj = 125°C LS = 100nH REVERSE RECOVERY TIME trr (µs) 3 2 3 2 101 7 5 3 2 Irr 103 7 5 3 2 1000 trr 100 7 5 3 2 102 7 5 3 2 7 103 7 104 500 10-1 2 10 101 2 3 45 2 3 45 0 0 1000 2000 3000 4000 5000 FORWARD CURRENT IF (A) REVERSE VOLTAGE VR (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 1.2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Rth(j–c) = 39K/kW 1.0 0.8 0.6 0.4 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 TIME (s) High Voltage Diode Module May 2009 4