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RM60DZ-2H

RM60DZ-2H

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RM60DZ-2H - HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE - Mitsubishi Electric Semiconductor

  • 数据手册
  • 价格&库存
RM60DZ-2H 数据手册
MITSUBISHI DIODE MODULES RM60DZ/CZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE RM60DZ/CZ-24,-2H • IF(AV) • VRRM Average forward current .......... 500A Repetitive peak reverse voltage .............. 400/800/1200/1600V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC motor control inverters, DC motor controllers, battery DC power supplies, DC power supplies for control panels, and other general DC power equipment OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 80 2–φ6.5 (DZ) 12.5 26 A1K2 16.5 23 23 3–M5 (CZ) A1 SR1 SR1 K1 SR2 A2 K1K2 SR2 A2 6.5 NAME PLATE 21 30 RM60DZ/CZ-24,-2H Feb.1999 MITSUBISHI DIODE MODULES RM60DZ/CZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage Voltage class 24 1200 1350 960 2H 1600 1700 1280 Unit V V V Symbol IF (RMS) IF (AV) IFSM I2t f Tj Tstg Viso Parameter RMS forward current Average forward current Surge (non-repetitive) forward current I2t for fusing Maximum operating frequency Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M5 Conditions Single-phase, half-wave 180° conduction, TC=112°C One half chcle at 60Hz, peak value Value for one cycle of surge current Ratings 95 60 1200 6.0 × 103 1000 –40~150 –40~125 2500 1.47~1.96 15~110 1.96~2.94 20~30 160 Unit A A A A2s Hz °C °C V N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M6 — Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM VFM Rth (j-c) Rth (c-f) — Parameter Repetitive reverse current Forward voltage Thermal resistance Contact thermal resistance Insulation resistance Tj=150°C, VRRM applied Tj=25°C, IFM=180A, instantaneous meas. Junction to case, per 1/2 module Case to fin, with thermal compound, per 1/2 module Measured with a 500V megohmmeter between main terminal and case Test conditions Min. — — — — 10 Typ. — — — — — Max. 20 1.35 0.5 0.2 — Unit mA V °C/ W °C/ W MΩ Feb.1999 MITSUBISHI DIODE MODULES RM60DZ/CZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTICS 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 ALLOWABLE SURGE (NON-REPETITIVE) FORWARD CURRENT 1600 Tj=25°C 1400 SURGE (NON-REPETITIVE) FORWARD CURRENT (A) FORWARD CURRENT (A) 1200 1000 800 600 400 200 0 1 23 5 7 10 20 30 50 70100 FORWARD VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM POWER DISSIPATION 100 TRANSIENT THERMAL IMPEDANCE (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 0.50 POWER DISSIPATION (W) RESISTIVE, INDUCTIVE LOAD SINGLE-PHASE OPERATION THREE-PHASE OPERATION DC OPERATION 0.40 80 0.30 60 0.20 40 0.10 0 10 –3 2 3 5 7 10 –2 2 3 5 7 10 –1 2 3 5 7 10 0 20 0 0 20 40 60 80 100 TIME (s) AVERAGE FORWARD CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE FORWARD CURRENT 160 RESISTIVE, INDUCTIVE LOAD CASE TEMPERATURE (°C) 140 DC OPERATION 120 100 THREE-PHASE OPERATION 80 SINGLEPHASE OPERATION 60 0 20 40 60 80 100 AVERAGE FORWARD CURRENT (A) Feb.1999
RM60DZ-2H 价格&库存

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