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RM75TC-M

RM75TC-M

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RM75TC-M - MEDIUM POWER GENERAL USE INSULATED TYPE - Mitsubishi Electric Semiconductor

  • 数据手册
  • 价格&库存
RM75TC-M 数据手册
MITSUBISHI DIODE MODULES RM75TC-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE RM75TC-M,-H,-24,-2H • IO • VRRM DC output current .................... 150A Repetitive peak reverse voltage .......... 400/800/1200/1600V • 3 phase bridge • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor controllers, Battery DC power supplies, DC power supplies for control panels, and other general DC power equipment OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 23 14 14 23 14 P 20 90 78 66 32 N 20 P N 16 5–M6 30 50 74 16 4–φ4.5 31 6.5 Feb.1999 MITSUBISHI DIODE MODULES RM75TC-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM Ea Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Recommended AC input voltage Voltage class M 400 480 110 H 800 960 220 24 1200 1350 370 2H 1600 1700 440 Unit V V V Symbol IO IFSM I2t f Tj Tstg Viso Parameter DC output current Surge (non-repetitive) forward current I2t for fusing Maximum operating frequency Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M6 Conditions Three-phase full wave rectifying circuit, TC=99°C One half cycle at 60Hz, peak value Value for one cycle of surge current Ratings 150 1500 9.4 × 103 1000 –40~+150 –40~+125 2500 1.96~2.94 20~30 0.98~1.47 10~15 405 Unit A A A2s Hz °C °C V N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M4 — Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM VFM Rth (j-c) Rth (c-f) — Parameter Repetitive reverse current Forward voltage Thermal resistance Contact thermal resistance Insulation resistance Tj=150°C, VRRM applied Tj=25°C, IFM=150A, instantaneous meas. Junction to case Case to fin, conductive grease applied Measured with a 500V megohmmeter between main terminal and case Test conditions Min. — — — — 10 Typ. — — — — — Max. 15 1.3 0.13 0.04 — Unit mA V °C/ W °C/ W MΩ Feb.1999 MITSUBISHI DIODE MODULES RM75TC-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 0.8 ALLOWABLE SURGE (NON-REPETITIVE) FORWARD CURRENT 1600 Tj=25°C 1400 SURGE (NON-REPETITIVE) FORWARD CURRENT (A) FORWARD CURRENT (A) 1200 1000 800 600 400 200 1.2 1.6 2.0 2.4 2.8 0 1 2 3 4 5 7 10 20 30 50 70100 FORWARD VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM POWER DISSIPATION 400 350 MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 0.16 TRANSIENT THERMAL IMPEDANCE (°C/W) 0.14 RESISTIVE, INDUCTIVE LOAD POWER DISSIPATION (W) 0.12 0.10 0.08 0.06 0.04 0.02 0 10 –3 2 3 5 7 10 –2 2 3 5 7 10 –1 2 3 5 7 10 0 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 TIME (s) DC OUTPUT CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. DC OUTPUT CURRENT 160 150 RESISTIVE, INDUCTIVE LOAD CASE TEMPERATURE (°C) 140 130 120 110 100 90 80 0 20 40 60 80 100 120 140 160 DC OUTPUT CURRENT (A) Feb.1999
RM75TC-M 价格&库存

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