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RM75TPM-H

RM75TPM-H

  • 厂商:

    MITSUBISHI(三菱)

  • 封装:

  • 描述:

    RM75TPM-H - DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE - Mitsubishi Electric Semiconducto...

  • 数据手册
  • 价格&库存
RM75TPM-H 数据手册
MITSUBISHI DIODE MODULES RM75TPM-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE RM75TPM-M,-H,-24,-2H ● ● IO VRRM ● ● ● DC output current ..................... 150A Repetitive peak reverse voltage ............ 400/800/1200/1600V 3 phase bridge Insulated Type UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION AC motor controllers , DC motor controllers, Battery DC power supplies, DC power supplies for control panels, and other general DC power equipment OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 80 20 20 3 ~ ~ ~ MOUNTING 2–φ5.5 HOLES ~~~ + - 11.5 10.5 40 + 30 68 ±0.25 10 5–M5 NUTS - CIRCUIT DIAGRAM LABEL 8 +1.5 24.1 -0.5 Feb. 2009 MITSUBISHI DIODE MODULES RM75TPM-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM Ea Parameter M Repetitive peak reverse voltage Non-repetitive peak reverse voltage Recommended AC input voltage 400 480 110 H 800 960 220 Voltage class 24 1200 1350 370 2H 1600 1700 440 V V Vrms Unit Symbol IO IFSM I2t f Tj Tstg Viso — — Parameter DC output current Surge (non-repetitive) forward current I2t for fusing Maximum operating frequency Junction temperature Storage temperature Isolation voltage Mounting torque Weight Conditions Three-phase full wave rectifying circuit, TC=99°C One half cycle at 60Hz, peak value Value for one cycle of surge current Ratings 150 1500 9380 1000 –40~+150 –40~+125 Unit A A A2s Hz °C °C Vrms N·m N·m g Charged part to base plate, f=60Hz, AC 1 minute Main terminal M5 screw Mounting M5 screw Typical value 2500 1.47~1.96 1.47~1.96 200 ELECTRICAL AND THERMAL RESISTANCE CHARACTERISTICS Symbol IRRM VFM Rth (j-c) Rth (c-f) — Parameter Repetitive reverse current Forward voltage Thermal resistance Contact thermal resistance Insulation resistance Tj=150°C, VRRM applied Tj=25°C, IFM=150A, instantaneous meas. Junction to case Case to heat sink, conductive grease applied Measured with a 500V megohmmeter between main terminal and case Conditions Limits Min. — — — — 10 Typ. — — — — — Max. 15 1.3 0.13 0.06 — Unit mA V K/ W K/ W MΩ Feb. 2009 2 MITSUBISHI DIODE MODULES RM75TPM-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVE MAXIMUM FORWARD CHARACTERISTICS 104 7 Tj = 25°C 5 3 2 103 7 5 3 2 102 7 5 3 2 101 0.8 1.2 1.6 2.0 2.4 2.8 ALLOWABLE SURGE (NON-REPETITIVE) FORWARD CURRENT 1600 SURGE (NON-REPETITIVE) FORWARD CURRENT (A) 1400 1200 1000 800 600 400 200 0 100 2 3 4 5 7 10 20 30 50 70100 FORWARD CURRENT (A) FORWARD VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM POWER DISSIPATION MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 100 2 3 5 7 101 0.16 400 TRANSIENT THERMAL IMPEDANCE (K/W) POWER DISSIPATION (W) 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 TIME (s) DC OUTPUT CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. DC OUTPUT CURRENT 160 CASE TEMPERATURE (°C) 150 140 130 120 110 100 90 80 0 20 40 60 80 100 120 140 160 DC OUTPUT CURRENT (A) Feb. 2009 3
RM75TPM-H 价格&库存

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