RM900DB-90S

MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE RM900DB-90S ● IF ................................................................... 900A ● VRRM ...................................................... 4500V ● Insulated Type ● 2-element in a Pack ● Copper Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 57 ±0.25 57 ±0.25 4-M8 NUTS 29.5 20 >PPS< K1 (C) K2 (C) K1 C K2 C 124 ±0.25 High Voltage Diode Module 38 +1.0 0 5 LABEL CM A1 140 40 E A2 E 15 C E G A1 (E) A2 (E) CIRCUIT DIAGRAM 6-φ7 MOUNTING HOLES 61.5 18 Screwing depth min. 16.5 May 2009 1 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VRRM VRSM VR(DC) IF IFSM I2t Viso Tj Top Tstg Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage DC forward current Surge forward current Current-squared, time integration Isolation voltage Junction temperature Operating temperature Storage temperature Conditions Tj = 25 °C Tj = 25 °C Tj = 25 °C TC = 25 °C Tj = 25 °C start, tw = 8.3 ms Half sign wave Tj = 25 °C start, tw = 8.3 ms Half sign wave Charged part to the baseplate RMS sinusoidal, 60Hz 1min. — — — Ratings 4500 4500 3000 900 6400 170 6000 –40 ~ +150 –40 ~ +125 –40 ~ +125 Unit V V V A A kA2s V °C °C °C ELECTRICAL CHARACTERISTICS Symbol IRRM VFM trr Irr Qrr Erec Item Repetitive reverse current Forward voltage (Note 1) VRM = VRRM IF = 900 A Conditions Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Min — — — — — — — — Limits Typ — 8 4.00 3.60 0.9 900 650 0.7 Max 8 20 — — — — — — Unit mA V µs A µC J/P Reverse recovery time VR = 2250 V, IF = 900 A Reverse recovery current di/dt = –1800 A/µs Reverse recovery charge Reverse recovery energy (Note 2) Ls=100nH, Tj = 125 °C Note 1. It doesn't include the voltage drop by internal lead resistance. 2. Erec is the integral of 0.1VR x 0.1Irr x dt. High Voltage Diode Module May 2009 2 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c) Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to case (per 1/2 module) Case to Fin, λgrease = 1W/m·K D(c-f)=100µm, (per 1/2 module) Min — — Limits Typ — 16.0 Max 20.0 — Unit K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Mt Ms m CTI Da Ds LP CE RCC’+EE’ Item Mounting torque Mass Comparative tracking index Clearance Creepage distance Internal inductance Internal lead resistance Conditions M8: Main terminals screw M6: Mounting screw — — — — — Tc = 25 °C Min 7.0 3.0 — 600 19.5 32 — — Limits Typ — — 1.5 — — — 35 0.25 Max 13.0 6.0 — — — — — — Unit N·m N·m kg — mm mm nH mΩ PERFORMANCE CURVES FORWARD CHARACTERISTICS (TYPICAL) 1800 REVERSE RECOVERY ENERGY Erec (J/p) REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) 1.2 VR = 2250V, di/dt = 1800A/µs Tj = 125°C, LS = 100nH 1.0 1600 1400 1200 1000 800 600 400 200 0 Tj = 25°C Tj = 125°C 0 2 4 6 8 FORWARD CURRENT IF (A) 0.8 0.6 0.4 0.2 0 0 500 1000 1500 2000 FORWARD VOLTAGE VF (V) FORWARD CURRENT IF (A) High Voltage Diode Module May 2009 3 MITSUBISHI HIGH VOLTAGE DIODE MODULE RM900DB-90S High Voltage Diode Module HIGH POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 7 5 REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 104 7 5 2500 VR ≤ 3000V, di/dt ≤ 2600A/µs Tj = 125°C REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY CURRENT Irr (A) VR = 2250V, di/dt = 1800A/µs Tj = 125°C, LS = 100nH REVERSE RECOVERY TIME trr (µs) 3 2 3 2 2000 101 7 5 3 2 Irr 103 7 5 3 2 1500 1000 100 7 5 3 2 trr 102 7 5 3 2 500 10-1 2 10 2 3 45 7 103 2 3 45 7 104 101 0 0 1000 2000 3000 4000 5000 FORWARD CURRENT IF (A) REVERSE VOLTAGE VR (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 1.2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Rth(j–c) = 20K/kW 1.0 n 0.8 Z th( j –c ) ( t ) = Ri [ K/kW] Σ Ri 1–exp i=1 1 0.0059 0.0002 2 0.0978 0.0074 0.6 τ i [sec] 0.4 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) High Voltage Diode Module 4   – t ti   3 0.6571 0.0732 4 0.2392 0.4488 May 2009