TM100

MITSUBISHI THYRISTOR MODULES TM100SZ-M MEDIUM POWER GENERAL USE NON-INSULATED TYPE TM100SZ-M • IT (AV) • VRRM Average on-state current .......... 100A Repetitive peak reverse voltage ................ 400V • VDRM Repetitive peak off-state voltage ................ 400V • TRIPLE ARMS • Non-Insulated Type APPLICATION Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 80±0.2 K3 K2 K1 2–φ6.5 K2 G2 12.5 K3 K2 K2 G2 CR3 CR2 K1 K1 G1 CR1 26 G3 K1 G1 K3 K3 G3 3–M5 17.5 20 20 Tab#110, t=0.5 K3 K2 K1 A 9 A 21 LABEL 6.5 30 Feb.1999 MITSUBISHI THYRISTOR MODULES TM100SZ-M MEDIUM POWER GENERAL USE NON-INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Voltage class M 400 480 320 400 480 320 Unit V V V V V V Symbol IT (RMS) IT (AV) ITSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Parameter RMS on-state current Average on-state current Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Main terminal screw M5 Conditions Three-phase, half-wave, TC=122°C One half cycle at 60Hz, peak value Value for one cycle of surge current VD=1/2VDRM, IG=1.0A, Tj=150°C Ratings 155 100 2000 1.7 × 104 50 5.0 0.5 10 5.0 2.0 –40~+150 –40~+125 1.47~1.96 15~20 1.96~2.94 20~30 160 Unit A A A A2s A/µs W W V V A °C °C N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M6 — Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM IDRM VTM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Tj=150°C, VRRM applied Tj=150°C, VDRM applied Tj=150°C, ITM=300A, instantaneous meas. Tj=150°C, VD=2/3VDRM Tj=25°C, VD=6V, RL=2Ω Tj=150°C, VD=1/2VDRM Tj=25°C, VD=6V, RL=2Ω Junction to case (per 1/3 module) Case to fin, conductive grease applied (per 1/3 module) Test conditions Min. — — — 200 — 0.25 15 — — Typ. — — — — — — — — — Max. 30 30 1.15 — 3.0 — 100 0.2 0.3 Unit mA mA V V/µs V V mA °C/ W °C/ W Feb.1999 MITSUBISHI THYRISTOR MODULES TM100SZ-M MEDIUM POWER GENERAL USE NON-INSULATED TYPE PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTIC 10 4 7 Tj=150°C 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 0.6 2000 RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT SURGE (NON-REPETITIVE) ON-STATE CURRENT (A) ON-STATE CURRENT (A) 1600 1200 800 400 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 1 23 5 7 10 20 30 50 70100 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLE AT 60Hz) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 710 1 0.200 TRANSIENT THERMAL IMPEDANCE (°C/W) 0.175 0.150 0.125 0.100 0.075 0.050 0.025 0 10 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 7 10 0 GATE CHARACTERISTICS 4 3 2 VFGM=10V 10 1 PGM=5W 7 5 VGT=3.0V PFG(AV)= 3 0.50W 2 IGT= 10 0 100mA 7 5 Tj=25°C 3 2 VGD=0.25V 10 –1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 GATE VOLTAGE (V) GATE CURRENT (mA) IFGM=2.0A TIME (s) 100 MAXIMUM AVERAGE ON-STAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) 120° 180° 90° (°C) 60° LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) 150 PER SINGLE ELEMENT 140 θ 360° RESISTIVE, INDUCTIVE LOAD θ=30° AVERAGE ON-STATE POWER DISSIPATION (W) 80 60 CASE TEMPERATURE θ=30° θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 60 80 100 130 40 120 60° 90° 120° 180° 20 110 0 0 20 40 100 0 20 40 60 80 100 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM100SZ-M MEDIUM POWER GENERAL USE NON-INSULATED TYPE 160 AVERAGE ON-STATE POWER DISSIPATION (W) (°C) 140 120 MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) DC 270° 150 LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) PER SINGLE ELEMENT θ 360° RESISTIVE, INDUCTIVE LOAD 180° 120° 90° 60° θ=30° θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 80 100 120 140 160 (A) 140 100 80 60 40 20 0 0 20 40 CASE TEMPERATURE 130 120 θ=30° 60° 90° 180° 270° DC 120° 110 60 100 0 40 80 120 160 AVERAGE ON-STATE CURRENT AVERAGE ON-STATE CURRENT (A) Feb.1999