TM10T3B-M

MITSUBISHI THYRISTOR MODULES TM10T3B-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE TM10T3B-M,-H • IO • VRRM • • • • DC output current ...................... 20A Repetitive peak reverse voltage ........ 400/800V VDRM Repetitive peak off-state voltage ........ 400/800V 3 Phase Mix Bridge Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC motor control, NC equipment, AC motor control, contactless switches, electric furnace temperature control, light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 80 2 2 2–φ4.5 P T K GT GS GR 17 34 S R 22 GR GS GT K R S N 17 68 P 7.5 T N Tab#110, t=0.5 7 Tab#250, t=0.8 18.5 LABEL 6 31 2 Feb.1999 MITSUBISHI THYRISTOR MODULES TM10T3B-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Voltage class M 400 480 320 400 480 320 H 800 960 640 800 960 640 Unit V V V V V V Symbol IO ITSM, IFSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso — — Parameter DC output current Surge (non-repetitive) current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Isolation voltage Mounting torque Weight Charged part to case Mounting screw M4 Typical value Conditions 3-phase fullwave rectified, TC=79°C One half cycle at 60Hz, peak value Value for one cycle of surge current VD=1/2VDRM, IG=0.5A, Tj=125°C Ratings 20 200 1.7 × 102 50 5.0 0.5 10 5.0 2.0 –40~125 –40~125 2500 0.98~1.47 10~15 130 Unit A A A2s A/µs W W V V A °C °C V N·m kg·cm g ELECTRICAL CHARACTERISTICS Limits Symbol IRRM IDRM VTM, VFM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) — Parameter Repetitive peak reverse current Repetitive peak off-state current Forward voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Insulation resistance Tj=125°C, VRRM applied Tj=125°C, VDRM applied Tj=125°C, ITM=IFM=20A, instantaneous meas. Tj=125°C, VD=2/3VDRM Tj=25°C, VD=6V, RL=2Ω Tj=125°C, VD=1/2VDRM Tj=25°C, VD=6V, RL=2Ω Junction to case (per 1/6 module) Case to fin, Conductive grease applied (per 1/6 module) Measured with a 500V megohmmeter between main terminal and case Test conditions Min. — — — 500 — 0.25 10 — — 10 Typ. — — — — — — — — — — Max. 4.0 4.0 1.3 — 2.0 — 50 4.5 0.6 — Unit mA mA V V/µs V V mA °C/ W °C/ W MΩ Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables. Feb.1999 MITSUBISHI THYRISTOR MODULES TM10T3B-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM RATINGS Item Thyristor Diode — — — — VRRM VRSM VR (DC) VDRM VDSM VD (DC) IT (RMS) IF (RMS) IT (AV) IF (AV) ITSM IFSM I2t di/dt Item Thyristor Diode PGM PG (AV) VFGM IFGM Tj Tstg — — — — ELECTRICAL CHARACTERISTICS Item Thyristor Diode — — — — — IRRM IDRM VTM VFM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC RATED SURGE (NON-REPETITIVE) CURRENT SURGE (NON-REPETITIVE) CURRENT (A) 10 3 Tj=125°C 7 5 CURRENT (A) 200 160 3 2 10 2 7 5 3 2 10 1 0.8 1.0 1.2 1.4 1.6 1.8 120 80 40 0 1 23 5 7 10 20 30 50 70100 FORWARD VOLTAGE (V) CONDUCTION TIME (CYCLE AT 60Hz) Feb.1999 MITSUBISHI THYRISTOR MODULES TM10T3B-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) (PER SINGLE ELEMENT) TRANSIENT THERMAL IMPEDANCE (°C/W) 10 0 2 3 5 710 1 5.0 MAXIMUM POWER DISSIPATION (THREE PHASE FULLWAVE RECTIFIED) 80 (W) 70 60 50 40 30 20 10 RESISTIVE, INDUCTIVE LOAD POWER DISSIPATION 4.0 120° 90° 60° θ=30° 3.0 2.0 1.0 0 10 –3 2 3 5 7 10 –2 2 3 5 7 10 –12 3 5 7 10 0 0 0 5 10 15 20 TIME (s) DC OUTPUT CURRENT (A) LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE PHASE FULLWAVE RECTIFIED) 130 120 (°C) CASE TEMPERATURE 110 100 90 80 70 60 50 40 30 0 5 10 15 20 θ=30° 60° 90° 120° DC OUTPUT CURRENT (A) Feb.1999