TM130DZ-M

MITSUBISHI THYRISTOR MODULES TM130DZ/CZ/PZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE TM130DZ/CZ/PZ-M,-H • IT (AV) • VRRM • • • • Average on-state current .......... 130A Repetitive peak reverse voltage ........ 400/800V VDRM Repetitive peak off-state voltage ........ 400/800V DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 (DZ Type) APPLICATION DC motor control, NC equipment, AC motor control, Contactless switches, Electric furnace temperature control, Light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 3–φ6.5 4–M8 A1 K1 K2 A2 K2 G2 (DZ) CR1 A1 40 K2 G2 K2 A2 CR2 K1 G1 K1 20 K1 G1 6 18 30 68.5 16 32 18 30 68.5 150 16 (CZ) CR1 A1 K1 K2 Tab#110, t=0.5 (PZ) K2 G2 A2 CR2 K1 G1 9 CR2 A2 K1 G1 K2 G2 (DZ Type) 7 23 LABEL 32 A1 CR1 K1 K2 39 (Bold line is connective bar.) Feb.1999 MITSUBISHI THYRISTOR MODULES TM130DZ/CZ/PZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Voltage class M 400 480 320 400 480 320 H 800 960 640 800 960 640 Unit V V V V V V Symbol IT (RMS) IT (AV) ITSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso Parameter RMS on-state current Average on-state current Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M8 Conditions Single-phase, half-wave 180° conduction, TC=85°C One half cycle at 60Hz, peak value Value for one cycle of surge current VD=1/2VDRM, IG=1.0A, Tj=125°C Ratings 205 130 2600 2.8 × 104 100 10 3.0 10 5.0 4.0 –40~+125 –40~+125 2500 8.83~10.8 90~110 1.96~3.92 20~40 300 Unit A A A A2s A/µs W W V V A °C °C V N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M6 — Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM IDRM VTM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) — Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Insulation resistance Tj=125°C, VRRM applied Tj=125°C, VDRM applied Tj=125°C, ITM=390A, instantaneous meas. Tj=125°C, VD=2/3VDRM Tj=25°C, VD=6V, RL=2Ω Tj=125°C, VD=1/2VDRM Tj=25°C, VD=6V, RL=2Ω Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Test conditions Min. — — — 500 — 0.25 15 — — 10 Typ. — — — — — — — — — — Max. 30 30 1.3 — 3.0 — 100 0.22 0.1 — Unit mA mA V V/µs V V mA °C/ W °C/ W MΩ Feb.1999 MITSUBISHI THYRISTOR MODULES TM130DZ/CZ/PZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTIC RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT 10 3 7 5 3 2 10 2 7 5 3 2 10 1 0.4 SURGE (NON-REPETITIVE) ON-STATE CURRENT (A) ON-STATE CURRENT (A) 10 4 7 5 3 2 3200 Tj=125°C 2800 2400 2000 1600 1200 800 400 0.8 1.2 1.6 2.0 2.4 0 1 23 5 7 10 20 30 50 70100 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 710 1 0.25 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE CHARACTERISTICS 4 3 2 GATE VOLTAGE (V) VFGM=10V VGT=3.0V PG(AV)= 3.0W 10 1 7 5 3 2 PGM=10W 0.20 0.15 10 0 7 5 IGT= 100mA 3 2 10 –1 VGD=0.25V IFGM=4.0A 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 GATE CURRENT (mA) Tj=25°C 0.10 0.05 0 10 –3 2 3 5 7 10 –2 2 3 5 7 10 –1 2 3 5 7 10 0 TIME (s) 160 AVERAGE ON-STATE POWER DISSIPATION (W) MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE HALFWAVE) 120° 180° CASE TEMPERATURE (°C) 130 120 110 100 90 80 70 60 50 LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) 140 120 PER SINGLE ELEMENT 60° PER SINGLE ELEMENT 90° 100 80 60 40 20 0 0 20 θ=30° θ 360° RESISTIVE, INDUCTIVE LOAD 180° 120° θ 360° RESISTIVE, INDUCTIVE LOAD 40 60 80 100 120 140 160 θ=30° 60° 90° 0 20 40 60 80 100 120 140 160 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM130DZ/CZ/PZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE 200 AVERAGE ON-STATE POWER DISSIPATION (W) 160 CASE TEMPERATURE (°C) MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) 270° PER SINGLE DC 180° ELEMENT 120° 90° 60° θ=30° 130 120 110 100 90 80 70 60 120 LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) PER SINGLE ELEMENT θ 360° RESISTIVE, INDUCTIVE LOAD 80 θ 360° RESISTIVE, INDUCTIVE LOAD 0 40 80 120 160 200 θ=30° 60° 90° 180° 270° DC 120° 40 0 50 0 40 80 120 160 200 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) 400 350 AVERAGE ON-STATE POWER DISSIPATION (W) 300 250 200 150 MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE FULLWAVE AC) PER SINGLE MODULE CASE TEMPERATURE (°C) θ=180° 120° 90° θ θ 60° 30° 130 120 110 100 90 80 70 60 50 0 LIMITING VALUE OF THE RMS ON-STATE CURRENT (SINGLE PHASE FULLWAVE AC) PER SINGLE MODULE θ=30° 60° 90° θ θ 360° RESISTIVE, INDUCTIVE LOAD 40 80 120 160 200 240 280 320 120° 180° 360° RESISTIVE, 100 INDUCTIVE LOAD 50 0 0 40 80 120 160 200 240 280 320 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) MAXIMUM ON-STATE POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED) ON-STATE POWER DISSIPATION (W) (PER SINGLE MODULE) 400 CASE TEMPERATURE (°C) (PER SINGLE MODULE) θθ 360° RESISTIVE, INDUCTIVE LOAD θ=30° 90° 60° 180° 120° LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) 130 120 110 100 90 80 70 θ=30° 60° 90° 180° 120° 320 240 160 80 0 0 40 80 120 160 200 240 280 320 DC OUTPUT CURRENT (A) (PER TWO MODULES) θθ 360° 60 RESISTIVE, INDUCTIVE LOAD 50 0 40 80 120 160 200 240 280 320 DC OUTPUT CURRENT (A) (PER TWO MODULES) Feb.1999 MITSUBISHI THYRISTOR MODULES TM130DZ/CZ/PZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE MAXIMUM ON-STATE POWER DISSIPATION (THREE PHASE FULLWAVE RECTIFIED) ON-STATE POWER DISSIPATION (W) (PER SINGLE MODULE) 400 CASE TEMPERATURE (°C) (PER SINGLE MODULE) LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE PHASE FULLWAVE RECTIFIED) 130 320 θ 360° 60° 120 120° 90° 110 100 90 80 70 60 θ=30° RESISTIVE, 240 INDUCTIVE LOAD θ=30° 160 θ 360° RESISTIVE, INDUCTIVE LOAD 60° 90° 120° 80 0 0 80 160 240 320 400 50 0 80 160 240 320 400 DC OUTPUT CURRENT (A) (PER THREE MODULES) DC OUTPUT CURRENT (A) (PER THREE MODULES) Feb.1999