TM25CZ-M

MITSUBISHI THYRISTOR MODULES TM25DZ/CZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE TM25DZ/CZ-M,-H • IT (AV) • VRRM • • • • Average on-state current ............ 25A Repetitive peak reverse voltage ........ 400/800V VDRM Repetitive peak off-state voltage ........ 400/800V DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC motor control, NC equipment, AC motor control, Contactless switches, Electric furnace temperature control, Light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 80 K2 G2 (DZ) 2–φ6.5 K2 G 2 A 1 K2 CR1 K1 CR2 A2 K1 G 1 12.5 K1 G1 17.5 20 20 3–M5 26 (CZ) K2 G 2 Tab # 110, t=0.5 A1 CR1 K1 K2 CR2 A2 K1 G 1 9 6.5 LABEL 21 30 Feb.1999 MITSUBISHI THYRISTOR MODULES TM25DZ/CZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Voltage class M 400 480 320 400 480 320 H 800 960 640 800 960 640 Unit V V V V V V Symbol IT (RMS) IT (AV) ITSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso Parameter RMS on-state current Average on-state current Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M5 Conditions Single-phase, half-wave 180° conduction, TC=93°C One half cycle at 60Hz, peak value Value for one cycle of surge current VD=1/2VDRM, IG=0.5A, Tj=125°C Ratings 39 25 500 1.0 × 103 100 5.0 0.5 10 5.0 2.0 –40~+125 –40~+125 2500 1.47~1.96 15~20 1.96~2.94 20~30 160 Unit A A A A2s A/µs W W V V A °C °C V N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M6 — Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM IDRM VTM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) — Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Insulation resistance Tj=125°C, VRRM applied Tj=125°C, VDRM applied Tj=125°C, ITM=75A, instantaneous value Tj=125°C, VD=2/3VDRM Tj=25°C, VD=6V, RL=2Ω Tj=125°C, VD=1/2VDRM Tj=25°C, VD=6V, RL=2Ω Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Test conditions Min. — — — 500 — 0.25 10 — — 10 Typ. — — — — — — — — — — Max. 4.0 4.0 1.5 — 3.0 — 50 0.8 0.2 — Unit mA mA V V/µs V V mA °C/ W °C/ W MΩ Feb.1999 MITSUBISHI THYRISTOR MODULES TM25DZ/CZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTIC 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.5 500 Tj=125°C RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT SURGE (NON-REPETITIVE) ON-STATE CURRENT (A) ON-STATE CURRENT (A) 400 300 200 100 1.0 1.5 2.0 2.5 0 1 23 5 7 10 20 30 50 70100 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10 –3 2 3 5 7 10 –2 2 3 5 7 10 –1 2 3 5 7 10 0 GATE CHARACTERISTICS 4 3 2 VFGM=10V 10 1 PGM=5.0W 7 5 VGT=3.0V PG(AV)= 3 0.50W 2 IGT= 10 0 50mA 7 5 T j= 25°C 3 2 VGD=0.25V 10 –1 7 5 4 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 10 GATE CURRENT (mA) TRANSIENT THERMAL IMPEDANCE (°C/W) GATE VOLTAGE (V) IFGM=2.0A TIME (s) 40 MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE HALFWAVE) 180° θ 360° RESISTIVE, INDUCTIVE LOAD θ=30° 60° 130 LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) PER SINGLE ELEMENT θ 360° RESISTIVE, INDUCTIVE LOAD AVERAGE ON-STATE POWER DISSIPATION (W) 35 30 25 20 15 10 5 0 0 CASE TEMPERATURE (°C) 120° 90° 120 110 100 PER SINGLE ELEMENT 5 10 15 20 25 90 θ=30° 60° 90° 120° 180° 80 0 5 10 15 20 25 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM25DZ/CZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE 50 AVERAGE ON-STATE POWER DISSIPATION (W) 40 CASE TEMPERATURE (°C) MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) DC 270° PER SINGLE 180° ELEMENT 120° 90° 60° 130 120 110 100 90 80 70 60 LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) PER SINGLE ELEMENT θ 360° RESISTIVE, INDUCTIVE LOAD 30 20 θ=30° 10 θ 360° RESISTIVE, INDUCTIVE LOAD θ=30° 60° 90° 180° 270° 120° 25 30 DC 0 0 5 10 15 20 25 30 35 40 50 0 5 10 15 20 35 40 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) 80 70 MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE FULLWAVE AC) θ θ 360° θ=180° 130 125 LIMITING VALUE OF THE RMS ON-STATE CURRENT (SINGLE PHASE FULLWAVE AC) PER SINGLE MODULE CASE TEMPERATURE (°C) AVERAGE ON-STATE POWER DISSIPATION (W) 60 50 40 30 20 10 0 0 120° 90° 60° 30° 120 115 110 105 100 95 90 85 θ 360° RESISTIVE, INDUCTIVE LOAD 0 10 20 30 40 50 60 70 80 θ θ=30° 60°,90° 120° 180° RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE 10 20 30 40 50 60 70 80 80 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) MAXIMUM ON-STATE POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED) ON-STATE POWER DISSIPATION (W) (PER SINGLE MODULE) 80 70 60 50 40 30 20 10 0 0 10 20 θθ 360° RESISTIVE, INDUCTIVE LOAD 30 50 40 θ=30° 60° 90° 180° 120° LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) 130 125 CASE TEMPERATURE (°C) (PER SINGLE MODULE) 120 115 110 105 100 95 90 85 80 0 10 20 30 θ=30° 60° θθ 360° RESISTIVE, INDUCTIVE LOAD 90° 120° 180° 40 50 DC OUTPUT CURRENT (A) (PER TWO MODULES) DC OUTPUT CURRENT (A) (PER TWO MODULES) Feb.1999 MITSUBISHI THYRISTOR MODULES TM25DZ/CZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM ON-STATE POWER DISSIPATION (THREE PHASE FULLWAVE RECTIFIED) 80 ON-STATE POWER DISSIPATION (W) (PER SINGLE MODULE) LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE PHASE FULLWAVE RECTIFIED) 130 70 60 50 40 30 20 10 0 0 10 20 30 40 θ=30° 60° 90° 120° CASE TEMPERATURE (°C) (PER SINGLE MODULE) 125 120 115 110 105 100 95 90 85 θ=30° 60° 90° 120° θ 360° RESISTIVE, INDUCTIVE LOAD θ 360° RESISTIVE, INDUCTIVE LOAD 50 60 70 80 80 0 10 20 30 40 50 60 70 80 DC OUTPUT CURRENT (A) (PER THREE MODULES) DC OUTPUT CURRENT (A) (PER THREE MODULES) Feb.1999