TM25DZ-24

MITSUBISHI THYRISTOR MODULES TM25DZ/CZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE TM25DZ/CZ-24,-2H • IT (AV) • VRRM • • • • Average on-state current ............ 25A Repetitive peak reverse voltage ........ 1200/1600V VDRM Repetitive peak off-state voltage ......... 1200/1600V DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC motor control, NC equipment, AC motor control, Contactless switches, Electric furnace temperature control, Light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 80 K2 G2 2–φ6.5 (DZ) K2 G 2 A1K2 CR1 K1 CR2 A2 K1 G 1 13 K1 G1 16.5 23 23 3–M5 26 (CZ) K2 G2 Tab # 110, t=0.5 A1 CR1 K1K2 CR2 A2 K1 G1 9 6.5 LABEL 21 30 Feb.1999 MITSUBISHI THYRISTOR MODULES TM25DZ/CZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Voltage class 24 1200 1350 960 1200 1350 960 2H 1600 1700 1280 1600 1700 1280 Unit V V V V V V Symbol IT (RMS) IT (AV) ITSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso Parameter RMS on-state current Average on-state current Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M5 Conditions Single-phase, half-wave 180° conduction, TC=87°C One half cycle at 60Hz, peak value Value for one cycle of surge current VD=1/2VDRM, IG=0.5A, Tj=125°C Ratings 39 25 500 1.0 × 103 100 5.0 0.5 10 5.0 2.0 –40~+125 –40~+125 2500 1.47~1.96 15~20 1.96~2.94 20~30 160 Unit A A A A2s A/µs W W V V A °C °C V N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M6 — Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM IDRM VTM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) — Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Insulation resistance Tj=125°C, VRRM applied Tj=125°C, VDRM applied Tj=125°C, ITM=75A, instantaneous meas. Tj=125°C, VD=2/3VDRM Tj=25°C, VD=6V, RL=2Ω Tj=125°C, VD=1/2VDRM Tj=25°C, VD=6V, RL=2Ω Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Test conditions Min. — — — 500 — 0.25 10 — — 10 Typ. — — — — — — — — — — Max. 10 10 1.8 — 3.0 — 50 0.8 0.2 — Unit mA mA V V/µs V V mA °C/ W °C/ W MΩ Feb.1999 MITSUBISHI THYRISTOR MODULES TM25DZ/CZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTIC 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.5 500 Tj=125°C RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT SURGE (NON-REPETITIVE) ON-STATE CURRENT (A) ON-STATE CURRENT (A) 400 300 200 100 1.0 1.5 2.0 2.5 0 1 23 5 7 10 20 30 50 70100 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 1.0 TRANSIENT THERMAL IMPEDANCE (°C/W) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10 –3 2 3 5 7 10 –2 2 3 5 7 10 –12 3 5 7 10 0 GATE CHARACTERISTICS 4 3 2 VFGM=10V 10 1 PGM=5.0W 7 5 VGT=3.0V PG(AV)= 3 0.50W 2 IGT= 10 0 50mA 7 5 Tj= 25°C 3 2 VGD=0.25V 10 –1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 GATE VOLTAGE (V) GATE CURRENT (mA) IFGM=2.0A TIME (s) 50 MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE HALFWAVE) θ 360° RESISTIVE, INDUCTIVE LOAD θ=30° 90° 60° 180° 120° 130 LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) PER SINGLE ELEMENT θ 360° RESISTIVE, INDUCTIVE LOAD AVERAGE ON-STATE POWER DISSIPATION (W) CASE TEMPERATURE (°C) 40 120 30 110 20 PER SINGLE ELEMENT 100 10 90 θ=30° 0 5 10 60° 90° 120° 180° 15 20 25 0 0 5 10 15 20 25 80 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM25DZ/CZ-24,-2H HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE 50 AVERAGE ON-STATE POWER DISSIPATION (W) MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) 270° DC 180° 130 120 CASE TEMPERATURE (°C) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) PER SINGLE ELEMENT 40 60° 30 30° 120° 90° 110 100 90 80 70 60 θ 360° RESISTIVE, INDUCTIVE LOAD 20 θ 360° PER SINGLE ELEMENT RESISTIVE, INDUCTIVE LOAD 24 32 40 θ=30° 60° 90° 180° 270° DC 120° 10 0 0 8 16 50 0 5 10 15 20 25 30 35 40 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) Feb.1999