TM25RZ-H

MITSUBISHI THYRISTOR MODULES TM25RZ/EZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE TM25RZ/EZ-M,-H • IT (AV) • IF (AV) • VRRM • • • • Average on-state current ............ 25A Average forward current ............ 25A Repetitive peak reverse voltage ........ 400/800V VDRM Repetitive peak off-state voltage ........ 400/800V MIX DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC motor control, NC equipment, AC motor control, contactless switches, electric furnace temperature control, light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 80 2–φ6.5 (RZ) 12.5 26 A1K2 CR K1 SR A2 K1 G1 K1 G1 17.5 20 20 3–M5 Tab#110, t=0.5 (EZ) A1 CR K 1K2 SR A2 K1 G1 9 6.5 LABEL 21 30 Feb.1999 MITSUBISHI THYRISTOR MODULES TM25RZ/EZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Voltage class M 400 480 320 400 480 320 H 800 960 640 800 960 640 Unit V V V V V V Symbol IT (RMS), IF (RMS) IT (AV), IF (AV) ITSM, IFSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso Parameter RMS current Average current Surge (non-repetitive) current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M5 Conditions Single-phase, half-wave 180° conduction, TC=93°C One half cycle at 60Hz, peak value Value for one cycle of surge current VD=1/2VDRM, IG=0.5A, Tj=125°C Ratings 39 25 500 1.0 × 103 100 5.0 0.5 10 5.0 2.0 –40~125 –40~125 2500 1.47~1.96 15~20 1.96~2.94 20~30 160 Unit A A A A2s A/µs W W V V A °C °C V N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M6 — Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM IDRM VTM, VFM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) — Parameter Repetitive peak reverse current Repetitive peak off-state current Foward voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Insulation resistance Tj=125°C, VRRM applied Tj=125°C, VDRM applied Tj=125°C, ITM=IFM=75A, instantaneous meas. Tj=125°C, VD=2/3VDRM Tj=25°C, VD=6V, RL=2Ω Tj=125°C, VD=1/2VDRM Tj=25°C, VD=6V, RL=2Ω Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Test conditions Min. — — — 500 — 0.25 10 — — 10 Typ. — — — — — — — — — — Max. 4.0 4.0 1.5 — 3.0 — 50 0.8 0.2 — Unit mA mA V V/µs V V mA °C/ W °C/ W MΩ Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables. Feb.1999 MITSUBISHI THYRISTOR MODULES TM25RZ/EZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM RATINGS Item Thyristor Diode — — — — VRRM VRSM VR (DC) VDRM VDSM VD (DC) IT (RMS) IF (RMS) IT (AV) IF (AV) ITSM IFSM I2t di/dt Item Thyristor Diode PGM PG (AV) VFGM IFGM Tj Tstg — — — — ELECTRICAL CHARACTERISTICS Item Thyristor Diode — — — — — IRRM IDRM VTM VFM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 10 3 7 5 3 2 CURRENT (A) 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.6 500 Tj=125°C SURGE (NON-REPETITIVE) CURRENT (A) 400 RATED SURGE (NON-REPETITIVE) CURRENT 300 200 100 1.0 1.4 1.8 2.2 2.6 0 1 23 5 7 10 20 30 50 70100 FORWARD VOLTAGE (V) CONDUCTION TIME (CYCLE AT 60Hz) GATE CHARACTERISTICS 4 3 2 10 1 GATE VOLTAGE (V) VFGM=10V TRANSIENT THERMAL IMPEDANCE (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10 –3 2 3 5 7 10 –2 2 3 5 7 10 –1 2 3 5 7 10 0 TIME (s) PGM=5.0W 7 5 VGT=3.0V PG(AV)= 3 0.50W 2 0 IGT= 10 50mA 7 5 Tj= 25°C 3 2 VGD=0.25V 10 –1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 GATE CURRENT (mA) IFGM=2.0A Feb.1999 MITSUBISHI THYRISTOR MODULES TM25RZ/EZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE 40 AVERAGE POWER DISSIPATION (W) 35 30 25 20 15 10 5 0 0 MAXIMUM AVERAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) 180° CASE TEMPERATURE (°C) θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT LIMITING VALUE OF THE AVERAGE CURRENT (SINGLE PHASE HALFWAVE) 130 θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 120° 90° 60° 120 110 θ=30° 100 90 θ=30° 60° 90° 120° 180° 5 10 15 20 25 80 0 5 10 15 20 25 AVERAGE CURRENT (A) AVERAGE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 50 AVERAGE POWER DISSIPATION (W) 270° 40 180° 120° 90° 60° 20 θ=30° θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT LIMITING VALUE OF THE AVERAGE CURRENT (RECTANGULAR WAVE) 130 120 CASE TEMPERATURE (°C) 110 100 90 80 70 60 θ=30° 60° 90° 180° 270° 120° 25 30 DC θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT DC 30 10 0 0 5 10 15 20 25 30 35 40 50 0 5 10 15 20 35 40 AVERAGE CURRENT (A) AVERAGE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) 80 AVERAGE POWER DISSIPATION (W) 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE LIMITING VALUE OF THE RMS CURRENT (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) 130 125 CASE TEMPERATURE (°C) 120 115 110 105 100 95 90 85 80 θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE θ θ=180° 90° 60° 30° θ=30°,60°,90° 180° θ 0 10 20 30 40 50 60 70 80 RMS CURRENT (A) RMS CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM25RZ/EZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED) 80 70 POWER DISSIPATION (W) (PER SINGLE MODULE) 60 50 40 30 20 10 0 0 10 20 30 θθ 360° RESISTIVE, INDUCTIVE LOAD LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) 130 125 CASE TEMPERATURE (°C) (PER SINGLE MODULE) 120 115 110 105 100 95 90 85 80 0 10 20 30 40 50 θ=30° 60° 90° 120° 180° θθ 360° RESISTIVE, INDUCTIVE LOAD 180° 120° 90° 60° θ=30° 40 50 DC OUTPUT CURRENT (A) (PER TWO MODULES) MAXIMUM POWER DISSIPATION (THREE-PHASE FULLWAVE RECTIFIED) 80 70 POWER DISSIPATION (W) (PER SINGLE MODULE) 60 50 40 30 20 10 0 0 10 20 30 40 θ 360° RESISTIVE, INDUCTIVE LOAD DC OUTPUT CURRENT (A) (PER TWO MODULES) LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE-PHASE FULLWAVE RECTIFIED) 130 125 CASE TEMPERATURE (°C) (PER SINGLE MODULE) 120 115 110 105 100 95 90 85 80 0 10 20 30 40 50 60 70 80 θ=30° 60° 90° 120° θ 360° RESISTIVE, INDUCTIVE LOAD 120° 90° 60° θ=30° 50 60 70 80 DC OUTPUT CURRENT (A) (PER THREE MODULES) DC OUTPUT CURRENT (A) (PER THREE MODULES) Feb.1999