TM55EZ-H

MITSUBISHI THYRISTOR MODULES TM55RZ/EZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE TM55RZ/EZ-M,-H • IT (AV) • IF (AV) • VRRM • • • • Average on-state current ............ 55A Average forward current ............ 55A Repetitive peak reverse voltage ........ 400/800V VDRM Repetitive peak off-state voltage ........ 400/800V MIX DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC motor control, NC equipment, AC motor control, contactless switches, electric furnace temperature control, light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 80 A1K2 K1 A2 2–φ6.5 (RZ) 12.5 26 A1K2 CR K1 SR A2 K1 G1 K1 G1 17.5 20 20 3–M5 (EZ) Tab#110, t=0.5 A1 CR K1K2 SR A2 K1 G1 9 6.5 LABEL 21 30 Feb.1999 MITSUBISHI THYRISTOR MODULES TM55RZ/EZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Voltage class M 400 480 320 400 480 320 H 800 960 640 800 960 640 Unit V V V V V V Symbol IT (RMS), IF (RMS) IT (AV), IF (AV) ITSM, IFSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso Parameter RMS current Average current Surge (non-repetitive) current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M5 Conditions Single-phase, half-wave 180° conduction, TC=86°C One half cycle at 60Hz, peak value Value for one cycle of surge current VD=1/2VDRM, IG=1.0A, Tj=125°C Ratings 86 55 1100 5.0 × 103 100 5.0 0.5 10 5.0 2.0 –40~125 –40~125 2500 1.47~1.96 15~20 1.96~2.94 20~30 160 Unit A A A A2s A/µs W W V V A °C °C V N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M6 — Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM IDRM VTM, VFM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) — Parameter Repetitive peak reverse current Repetitive peak off-state current Forward voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Insulation resistance Tj=125°C, VRRM applied Tj=125°C, VDRM applied Tj=125°C, ITM=IFM=165A, instantaneous meas. Tj=125°C, VD=2/3VDRM Tj=25°C, VD=6V, RL=2Ω Tj=125°C, VD=1/2VDRM Tj=25°C, VD=6V, RL=2Ω Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Test conditions Min. — — — 500 — 0.25 15 — — 10 Typ. — — — — — — — — — — Max. 10 10 1.35 — 3.0 — 100 0.5 0.2 — Unit mA mA V V/µs V V mA °C/ W °C/ W MΩ Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables. Feb.1999 MITSUBISHI THYRISTOR MODULES TM55RZ/EZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM RATINGS Item Thyristor Diode — — — — VRRM VRSM VR (DC) VDRM VDSM VD (DC) IT (RMS) IF (RMS) IT (AV) IF (AV) ITSM IFSM I2t di/dt Item Thyristor Diode PGM PG (AV) VFGM IFGM Tj Tstg — — — — ELECTRICAL CHARACTERISTICS Item Thyristor Diode — — — — — IRRM IDRM VTM VFM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 10 3 7 5 3 2 CURRENT (A) 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.4 1200 Tj=125°C SURGE (NON-REPETITIVE) CURRENT (A) 1000 RATED SURGE (NON-REPETITIVE) CURRENT 800 600 400 0.8 1.2 1.6 2.0 2.4 200 1 23 5 7 10 20 30 50 70100 FORWARD VOLTAGE (V) CONDUCTION TIME (CYCLE AT 60Hz) GATE CHARACTERISTICS 4 3 2 10 1 GATE VOLTAGE (V) VFGM=10V PGM=5W IFGM=2.0A TRANSIENT THERMAL IMPEDANCE (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 10 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 7 10 0 TIME (s) 7 5 VGT=3.0V PG(AV)= 3 0.50W 2 0 IGT= 10 100mA 7 5 Tj=25°C 3 2 VGD=0.25V 10 –1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 GATE CURRENT (mA) Feb.1999 MITSUBISHI THYRISTOR MODULES TM55RZ/EZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM AVERAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) 80 AVERAGE POWER DISSIPATION (W) 70 60 50 40 30 20 10 0 0 10 20 30 θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT LIMITING VALUE OF THE AVERAGE CURRENT (SINGLE PHASE HALFWAVE) 130 180° 120° 60° θ=30° 90° CASE TEMPERATURE (°C) 120 110 100 90 80 70 60 50 0 10 20 30 40 50 θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT θ=30° 60° 90° 120° 180° 40 50 60 70 80 60 70 80 AVERAGE CURRENT (A) AVERAGE CURRENT (A) 100 AVERAGE POWER DISSIPATION (W) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) DC 270° CASE TEMPERATURE (°C) LIMITING VALUE OF THE AVERAGE CURRENT (RECTANGULAR WAVE) 130 120 110 100 90 80 70 60 100 50 0 θ=30° 60° 90° 180° 270° DC 120° 20 40 60 80 100 θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 80 180° 120° 90° 60° θ=30° 60 40 θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 20 0 0 20 40 60 80 AVERAGE CURRENT (A) AVERAGE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) 160 AVERAGE POWER DISSIPATION (W) 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE LIMITING VALUE OF THE RMS CURRENT (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) 130 125 CASE TEMPERATURE (°C) 120 115 110 105 100 95 90 85 80 θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE θ θ=180° 90° 60° 30° θ θ=30° 60° 90° 180° 80 100 120 140 160 0 20 40 60 RMS CURRENT (A) RMS CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM55RZ/EZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE MAXIMUM POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED) 160 140 POWER DISSIPATION (W) (PER SINGLE MODULE) 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 θ=30° 60° θθ 360° RESISTIVE, INDUCTIVE LOAD LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) 130 125 CASE TEMPERATURE (°C) (PER SINGLE MODULE) 120 115 110 105 100 95 90 85 80 0 θ=30° 60° 90° 120° 20 40 60 180° θθ 360° RESISTIVE, INDUCTIVE LOAD 120° 180° 90° 80 100 120 140 160 DC OUTPUT CURRENT (A) (PER TWO MODULES) MAXIMUM POWER DISSIPATION (THREE-PHASE FULLWAVE RECTIFIED) 160 140 120 100 80 60 40 20 0 0 20 40 60 θ 360° RESISTIVE, INDUCTIVE LOAD DC OUTPUT CURRENT (A) (PER TWO MODULES) LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE-PHASE FULLWAVE RECTIFIED) 130 120 CASE TEMPERATURE (°C) (PER SINGLE MODULE) θ 360° RESISTIVE, INDUCTIVE LOAD POWER DISSIPATION (W) (PER SINGLE MODULE) 90° 60° θ=30° 120° 110 100 90 80 70 60 50 0 20 40 60 θ=30° 60° 90° 120° 80 100 120 140 160 80 100 120 140 160 DC OUTPUT CURRENT (A) (PER THREE MODULES) DC OUTPUT CURRENT (A) (PER THREE MODULES) Feb.1999