TM90DZ-2H

MITSUBISHI THYRISTOR MODULES TM90DZ/CZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE TM90DZ/CZ-24,-2H • IT (AV) • VRRM • • • • Average on-state current ............ 90A Repetitive peak reverse voltage ........ 1200/1600V VDRM Repetitive peak off-state voltage ........ 1200/1600V DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC motor control, NC equipment, AC motor control, Contactless switches, Electric furnace temperature control, Light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 80 K2 G2 2–φ6.5 (DZ) K2 G2 13 26 A1K2 CR1 K1 CR2 A2 K1 G1 K1 G1 16.5 23 23 3–M5 (CZ) Tab#110, t=0.5 A1 CR1 K1K2 K2 G2 A2 CR2 K1 G1 LABEL 6.5 21 30 9 Feb.1999 MITSUBISHI THYRISTOR MODULES TM90DZ/CZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Voltage class 24 1200 1350 960 1200 1350 960 2H 1600 1700 1280 1600 1700 1280 Unit V V V V V V Symbol IT (RMS) IT (AV) ITSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso Parameter RMS on-state current Average on-state current Surge (non-repetitive) on-state current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M5 Conditions Single-phase, half-wave 180° conduction, TC=82°C One half cycle at 60Hz, peak value Value for one cycle of surge current VD=1/2VDRM, IG=1.0A, Tj=125°C Ratings 140 90 1800 1.4 × 104 100 5.0 0.5 10 5.0 2.0 –40~+125 –40~+125 2500 1.47~1.96 15~20 1.96~2.94 20~30 160 Unit A A A A2s A/µs W W V V A °C °C V N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M6 — Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM IDRM VTM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) — Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Insulation resistance Tj=125°C, VRRM applied Tj=125°C, VDRM applied Tj=125°C, ITM=270A, instantaneous meas. Tj=125°C, VD=2/3VDRM Tj=25°C, VD=6V, RL=2Ω Tj=125°C, VD=1/2VDRM Tj=25°C, VD=6V, RL=2Ω Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Test conditions Min. — — — 500 — 0.25 15 — — 10 Typ. — — — — — — — — — — Max. 15 15 1.4 — 2.0 — 100 0.3 0.2 — Unit mA mA V V/µs V V mA °C/ W °C/ W MΩ Feb.1999 MITSUBISHI THYRISTOR MODULES TM90DZ/CZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTIC RATED SURGE (NON-REPETITIVE) ON-STATE CURRENT SURGE (NON-REPETITIVE) ON-STATE CURRENT (A) ON-STATE CURRENT (A) 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.8 2000 Tj=125°C 1600 1200 800 400 1.0 1.2 1.4 1.6 1.8 0 1 23 5 7 10 20 30 50 70100 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 0.40 GATE CHARACTERISTICS VFGM=10V TRANSIENT THERMAL IMPEDANCE (°C/W) 4 3 2 GATE VOLTAGE (V) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10 –3 2 3 5 7 10 –2 2 3 5 7 10 –1 2 3 5 7 10 0 TIME (s) 10 1 PGM=5.0W 7 5 VGT=2.0V PG(AV)= 3 0.50W 2 IGT= 10 0 100mA 7 5 Tj=25°C 3 2 VGD=0.25V 10 –1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 GATE CURRENT (mA) IFGM=2.0A 160 AVERAGE ON-STATE POWER DISSIPATION (W) MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE HALFWAVE) 130 120 CASE TEMPERATURE (°C) LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (SINGLE PHASE HALFWAVE) 140 120 θ 360° PER SINGLE ELEMENT 180° 120° 90° 60° PER SINGLE ELEMENT 110 100 90 80 70 60 θ=30° RESISTIVE, 100 INDUCTIVE LOAD 80 θ=30° 60 40 20 0 0 20 40 θ 360° RESISTIVE, INDUCTIVE LOAD 60° 90° 120° 180° 60 80 100 50 0 20 40 60 80 100 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM90DZ/CZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE 160 AVERAGE ON-STATE POWER DISSIPATION (W) 140 120 100 80 60 40 20 0 0 MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (RECTANGULAR WAVE) 270° DC CASE TEMPERATURE (°C) PER SINGLE ELEMENT 120° 90° 60° θ=30° θ 360° RESISTIVE, INDUCTIVE LOAD 80 100 120 140 160 180° 130 120 110 100 90 80 70 60 50 LIMITING VALUE OF THE AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) PER SINGLE ELEMENT θ 360° RESISTIVE, INDUCTIVE LOAD θ=30° 60° 90° 180° 120° 270° DC 20 40 60 0 20 40 60 80 100 120 140 160 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) 320 280 AVERAGE ON-STATE POWER DISSIPATION (W) 240 200 160 120 80 40 0 0 MAXIMUM AVERAGE ON-STATE POWER DISSIPATION (SINGLE PHASE FULLWAVE AC) θ CASE TEMPERATURE (°C) θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE 130 120 110 100 90 80 70 60 LIMITING VALUE OF THE RMS ON-STATE CURRENT (SINGLE PHASE FULLWAVE AC) ° 80 =1 ° θ0 12 ° 90 ° 60 ° 30 θ=30° 60°,90° 180°,120° θ θ 360° RESISTIVE, INDUCTIVE LOAD 0 40 80 120 160 200 PER SINGLE MODULE 40 80 120 160 200 50 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) MAXIMUM ON-STATE POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED) ON-STATE POWER DISSIPATION (W) (PER SINGLE MODULE) 320 280 240 120° 200 160 120 80 40 0 0 40 80 60° θ=30° θθ 360° RESISTIVE, INDUCTIVE LOAD 120 160 200 90° 180° CASE TEMPERATURE (°C) (PER SINGLE MODULE) LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) 130 120 110 100 90 80 70 60 50 0 40 80 120 160 200 θ=30° 60° 90° 120° 180° θθ 360° RESISTIVE, INDUCTIVE LOAD DC OUTPUT CURRENT (A) (PER TWO MODULES) DC OUTPUT CURRENT (A) (PER TWO MODULES) Feb.1999 MITSUBISHI THYRISTOR MODULES TM90DZ/CZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE MAXIMUM ON-STATE POWER DISSIPATION (THREE PHASE FULLWAVE RECTIFIED) ON-STATE POWER DISSIPATION (W) (PER SINGLE MODULE) 320 280 240 200 160 120 80 40 0 0 40 θ 360° RESISTIVE, INDUCTIVE LOAD 80 120 160 200 240 280 320 DC OUTPUT CURRENT (A) (PER THREE MODULES) CASE TEMPERATURE (°C) (PER SINGLE MODULE) LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE PHASE FULLWAVE RECTIFIED) 130 RESISTIVE, INDUCTIVE 120 LOAD 90° 120° 60° θ=30° 110 100 90 80 70 60 50 0 40 80 120 160 200 240 280 320 θ=30° 60° 90° 120° θ 360° DC OUTPUT CURRENT (A) (PER THREE MODULES) Feb.1999