MSM8521CBI-48D

512K x 8 Static RAM MSM8512C - 020 Issue 5.2 April 2001 Description The MSM8512C is a 512K x 8 SRAM monolithic device available in Chip Size BGA (Ball Grid Array) package, with access times of 20ns. The device is available to commercial and industrial temperature grades. The Chip Size BGA provides an ultra high density memory packaging solution. The Chip Size BGA occupies less than 50% of the board area of conventional SOP, SOJ and TSOP II packages. Block Diagram /CS /OE /WE A0 A1 A2 A3 A4 A5 A6 A7 A8 512K x 8 SRAM D0 D1 D2 D3 D4 D5 D6 D7 Features • Access times of 20 ns. • 5V + 10%, (3.3V Under Development) • Commercial & Industrial temperature grades • Chip Size BGA. • 48 pad, 1mm pad pitch, package. • Eutectic 63/67 solder ball attach. • Low Power Dissipation. Operating 1 W (max) Standby (CMOS) 66mW (max) • Completely Static Operation. • 4 layer BT substrate with power and ground planes. • Pinout and footprint will remain the same in the event of a die shrink. Pin Definition See page 2. Pin Functions Description Address Input Data Input/Output Chip Select Write Enable Output Enable No Connect Power Ground Signal A0~A18 D0~D7 /CS /WE /OE NC VCC GND A18 A17 A16 A15 A14 A13 A12 A11 A10 A9 Package Details 48D - 48 Ball, 1mm pitch Chip Size BGA Max. Dimensions (mm) - 8.00 x 10.00 x 1.40 Pin Definition - MSM8512B Pinout (Top View) 1 Pin A1 Ident. 2 3 4 5 6 A B C D E F G H A4 NC D0 VCC VSS D3 A2 /CS NC D1 D2 NC A0 A1 A3 A18 NC A5 A7 A8 A17 A15 NC A16 NC /OE NC NC A9 D6 D5 NC D7 VSS VCC D4 A13 NC NC /WE NC A6 A11 A14 NC A10 A12 NC Note : Pinout shows top view, balls facing down. PAGE 2 Issue 5.2 April 2001 Absolute Maximum Ratings(1) DC Operating Conditions Parameter Voltage on any pin relative to VSS Power Dissipation Storage Temperature Symbol VT PT TSTG Min -0.5 to 1 -55 to Max +6.0 Unit V W +150 O C Notes : (1) Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability Recommended Operating Conditions Parameter Supply Voltage Input High Voltage Input Low Voltage Operating Temperature Symbol VCC VIH VIL TA TAI Min 4.5 2.2 -0.3 0 -40 Ty p 5.0 Max 5.5 6.0 0.8 70 85 Unit V V V O O C C (I Suffix) DC Electrical Characteristics (VCC=5V+10%, TA= -40OC to 85OC) Parameter Input Leakage Current Output Leakage Current Symbol ILI ILO Test Condition VIN=VSS to VCC /CS=VIH or /OE=VIH or /WE=VIL, VOUT=VSS to VCC Min. Cycle, 100% Duty /CS=VIL, VIN=VIH or VIL, IOUT=0mA Min. Cycle, /CS=VIH f=0MHz, CS>VCC-0.2V, VIN>VCC-0.2V or VIN