V29C51000B-45T

MOSEL VITELIC V29C51000T/V29C51000B 512K BIT (65,536 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Description PRELIMINARY Features s s s s s s 64Kx8-bit Organization Address Access Time: 45, 70, 90 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 8KB Boot Block (lockable) 512 bytes per Sector, 128 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Program Cycle Time: 20µs (Max) Minimum 10,000 Erase-Program Cycles Low power dissipation – Active Read Current: 20mA (Typ) – Active Program Current: 30mA (Typ) – Standby Current: 100µA (Max) Hardware Data Protection Low VCC Program Inhibit Below 3.2V Self-timed program/erase operations with endof-cycle detection – DATA Polling – Toggle Bit CMOS and TTL Interface Available in two versions – V29C51000T (Top Boot Block) – V29C51000B (Bottom Boot Block) Packages: – 32-pin Plastic DIP – 32-pin TSOP-I – 32-pin PLCC s s s s s s s The V29C51000T/V29C51000B is a high speed 65,536 x 8 bit CMOS flash memory. Programming or erasing the device is done with a single 5 Volt power supply. The device has separate chip enable CE, program enable WE, and output enable OE controls to eliminate bus contention. The V29C51000T/V29C51000B offers a combination of features: Boot Block with Sector Erase Mode. The end of program/erase cycle is detected by DATA Polling of I/O7 or by the Toggle Bit I/O6. The V29C51000T/V29C51000B features a sector erase operation which allows each sector to be erased and reprogrammed without affecting data stored in other sectors. The device also supports full chip erase. Boot block architecture enables the device to boot from either the top (V29C51000T) or bottom (V29C51000B) sector. All inputs and outputs are CMOS and TTL compatible. The V29C51000T/V29C51000B is ideal for applications that require updatable code and data storage. s Device Usage Chart Operating Temperature Range 0°C to 70°C Package Outline P • T • J • 45 • Access Time (ns) 70 • 90 • Temperature Mark Blank V29C51000T/V29C51000B Rev. 0.5 October 2000 1 MOSEL VITELIC V 29 C 51 000 T – V29C51000T/V29C51000B OPERATING VOLTAGE 51: 5V DEVICE SPEED P = PDIP T = TSOP-I J = PLCC PKG. TEMP. BLANK (0°C TO 70°C) BOOT BLOCK LOCATION T: TOP B: BOTTOM 45: 45ns 70: 70ns 90: 90ns 51000-01 Pin Configurations N/C N/C A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 32-Pin PDIP 26 Top View 25 24 23 22 21 20 19 18 17 51001-02 Pin Names VCC WE NC A14 A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 A0–A15 I/O0–I/O7 CE OE WE VCC GND NC Address Inputs Data Input/Output Chip Enable Output Enable Program Enable 5V ± 10% Power Supply Ground No Connect VCC WE A12 A15 NC NC NC 4 3 2 1 32 31 30 29 28 27 26 25 24 23 22 21 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 A14 A13 A8 A9 A11 OE A10 CE I/O7 32 Pin PLCC Top View A11 A9 A8 A13 A14 NC WE VCC N/C N/C A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32-Pin TSOP I Standard Pinout Top View 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 51001-04 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 I/O1 I/O2 I/O3 I/O4 I/O5 GND I/O6 51001-03 V29C51000T/V29C51000B Rev. 0.5 October 2000 2 MOSEL VITELIC Functional Block Diagram V29C51000T/V29C51000B X-Decoder 65,536 Bit Memory Cell Array A0–A15 Address buffer & latches Y-Decoder CE OE WE Control Logic I/O Buffer & Data Latches I/O0–I/O7 51001-05 Capacitance (1,2) Symbol CIN COUT CIN2 Parameter Input Capacitance Output Capacitance Control Pin Capacitance Test mSetup VIN = 0 VOUT = 0 VIN = 0 Typ. 6 8 8 Max. 8 12 10 Units pF pF pF NOTE: 1. Capacitance is sampled and not 100% tested. 2. TA = 25°C, VCC = 5V ± 10%, f = 1 MHz. Latch Up Characteristics(1) Parameter Input Voltage with Respect to GND on A9, OE Input Voltage with Respect to GND on I/O, address or control pins VCC Current NOTE: 1. Includes all pins except VCC. Test conditions: VCC = 5V, one pin at a time. Min. -1 -1 -100 Max. +13 VCC + 1 +100 Unit V V mA AC Test Load +5.0 V IN3064 or Equivalent Device Under Test IN3064 or Equivalent CL = 100 pF 6.2 kΩ IN3064 or Equivalent IN3064 or Equivalent 51001-06 2.7 kΩ V29C51000T/V29C51000B Rev. 0.5 October 2000 3 MOSEL VITELIC Absolute Maximum Ratings(1) Symbol VIN VIN VCC TSTG TOPR IOUT V29C51000T/V29C51000B Parameter Input Voltage (input or I/O pins) Input Voltage (A9 pin, OE) Power Supply Voltage Storage Temerpature (Plastic) Operating Temperature Short Circuit Current(2) Commercial -2 to +7 -2 to +13 -0.5 to +5.5 -65 to +125 0 to +70 200 (Max.) Unit V V V °C °C mA NOTE: 1. Stress greater than those listed unders “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. No more than one output maybe shorted at a time and not exceeding one second long. DC Electrical Characteristics (over the commercial operating range) Parameter Name VIL VIH IIL IOL VOL VOH ICC1 Parameter Input LOW Voltage Input HIGH Voltage Input Leakage Current Output Leakage Current Output LOW Voltage Output HIGH Voltage Read Current Test Conditions VCC = VCC Min. VCC = VCC Max. VIN = GND to VCC, VCC = VCC Max. VOUT = GND to VCC, VCC = VCC Max. VCC = VCC Min., IOL = 2.1mA VCC = VCC Min, IOH = -400µA CE = OE = VIL, WE = VIH, all I/Os open, Address input = VIL/VIH, at f = 1/tRC Min., VCC = VCC Max. CE = WE = VIL, OE = VIH, VCC = VCC Max. CE = OE = WE = VIH, VCC = VCC Max. CE = OE = WE = VCC – 0.3V, VCC = VCC Max. CE = OE = VIL, WE = VIH CE = OE = VIL, WE = VIH, A9 = VH Max. Min. — 2 — — — 2.4 — Max. 0.8 — ±1 ±1 0.4 — 40 Unit V V µA µA V V mA ICC2 ISB ISB1 VH IH Program Current TTL Standby Current CMOS Standby Current Device ID Voltage for A9 Device ID Current for A9 — — — 11.5 — 50 2 100 12.5 50 mA mA µA V µA V29C51000T/V29C51000B Rev. 0.5 October 2000 4 MOSEL VITELIC AC Electrical Characteristics (over all temperature ranges) Read Cycle Parameter Name tRC tAA tACS tOE tCLZ tOLZ tDF tOH V29C51000T/V29C51000B -45 Parameter Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time CE Low to Output Active OE Low to Output Active Output Enable or Chip Disable to Output in High Z Output Hold from Address Change -70 Max. — 45 45 25 — — 20 -90 Max. — 70 70 35 — — 20 Min. 45 — — — 0 0 0 Min. 70 — — — 0 0 0 Min. 90 — — — 0 0 0 Max. — 90 90 45 — — 30 Unit ns ns ns ns ns ns ns 0 — 0 — 0 — ns Program (Erase/Program) Cycle Parameter Name tWC tAS tAH tCS tCH tOES tOEH tWP tWPH tDS tDH tWHWH1 tWHWH2 tWHWH3 -45 Parameter Program Cycle Time Address Setup Time Address Hold Time CE Setup Time CE Hold Time OE Setup Time OE High Hold Time WE Pulse Width WE Pulse Width High Data Setup Time Data Hold Time Programming Cycle Sector Erase Cycle Chip Erase Cycle -70 -90 Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Unit 45 0 35 0 0 0 0 25 20 20 0 — — — — — — — — — — — — — — — — 500 — — — — — — — — — — — 20 10 — 70 0 45 0 0 0 0 35 35 25 0 — — — — — — — — — — — — — — — — 500 — — — — — — — — — — — 20 10 — 90 0 45 0 0 0 0 45 38 30 0 — — — — — — — — — — — — — — — — 500 — — — — — — — — — — — 20 10 — ns ns ns ns ns ns ns ns ns ns ns µs ms ms V29C51000T/V29C51000B Rev. 0.5 October 2000 5 MOSEL VITELIC Waveforms of Read Cycle tRC ADDRESS tAA CE tCE tOE OE tOLZ WE tCLZ I/O HIGH-Z tOH VALID DATA OUT tAA V29C51000T/V29C51000B tDF VALID DATA OUT HIGH-Z 51000-07 Waveforms of WE Controlled-Program Cycle 3rd bus cycle tWC tAS ADDRESS 5555H tCH CE PA tAH PA(2) tRC OE tOES WE tCS tWPH tDS tDH I/O A0H PD(3) I/O7(1) DOUT tOH 51000-08 tWP tWHWH1 tDF tOE NOTES: 1. I/O7: The output is the complement of the data written to the device. 2. PA: The address of the memory location to be programmed. 3. PD: The data at the byte address to be programmed. V29C51000T/V29C51000B Rev. 0.5 October 2000 6 MOSEL VITELIC Waveforms of CE Controlled-Program Cycle tWC ADDRESS 5555H PA tAS tAH WE PA(1) V29C51000T/V29C51000B tRC OE tWP CE tOES tWPH tDS tDH I/O A0H PD(2) I/O7 DOUT tOH 51000-09 tWHWH1 tDF tOE Waveforms of Erase Cycle(1) tWC ADDRESS 5555H tAS 2AAAH 5555H tAH CE 5555H 2AAAH SA OE tWP WE tCS tDS tDH I/O AAH 55H 80H AAH 55H tWPH 10H for Chip Erase 30H 51000-10 NOTES: 1. PA: The address of the memory location to be programmed. 2. PD: The data at the byte address to be programmed. 3. SA: The sector address for Sector Erase. Address = don’t care for Chip Erase. V29C51000T/V29C51000B Rev. 0.5 October 2000 7 MOSEL VITELIC Waveforms of DATA Polling Cycle tCH CE tOE OE tOEH WE tCE tWHWH1 I/O7 I/O7 I/O7 V29C51000T/V29C51000B tDF tOH HIGH-Z VALID DATA OUT I/O0-I/O6 I/O0-I/O6 INVALID VALID DATA OUT HIGH-Z 51000-11 Waveforms of Toggle Bit Cycle CE tOEH WE OE I/O6 51000-12 V29C51000T/V29C51000B Rev. 0.5 October 2000 8 MOSEL VITELIC Functional Description The V29C51000T/V29C51000B consists of 256 equally-sized sectors of 512 bytes each. The 8 KB lockable Boot Block is intended for storage of the system BIOS boot code. The boot code is the first piece of code executed each time the system is powered on or rebooted. The V29C51000 is available in two versions: the V29C51000T with the Boot Block address starting from E000H to FFFFH, and the V29C51000B with the Boot Block address starting from 0000H to FFFFH. V29C51000T 8KB Boot Block 512 512 V29C51000T/V29C51000B V29C51000B FFFFH E000H 512 512 512 1FFFH 512 0000H 0000H 8KB Boot Block 51000-13 Read Cycle A read cycle is performed by holding both CE and OE signals LOW. Data Out becomes valid only when these conditions are met. During a read cycle WE must be HIGH prior to CE and OE going LOW. WE must remain HIGH during the read operation for the read to complete (see Table 1). 8KB Boot Block = 16 Sectors Byte Program Cycle The V29C51000T/V29C51000B is programmed on a byte-by-byte basis. The byte program operation is initiated by using a specific four-buscycle sequence: two unlock program cycles, a program setup command and program data program cycles (see Table 2). During the byte program cycle, addresses are latched on the falling edge of either CE o r WE, whichever is last. Data is latched on the rising edge of CE or WE, whichever is first. The byte program cycle can be CE controlled or WE controlled. Output Disable Returning OE or CE HIGH, whichever occurs first will terminate the read operation and place the l/O pins in the HIGH-Z state. Standby The device will enter standby mode when the CE signal is HIGH. The l/O pins are placed in the HIGH-Z, independent of the OE signal. Sector Erase Cycle T he V29C51000T/V29C51000B features a sector erase operation which allows each sector to be erased and reprogrammed without affecting data stored in other sectors. Sector erase operation is initiated by using a specific six-bus-cycle sequence: Two unlock program cycles, a setup command, two additional unlock program cycles, and the sector erase command (see Table 2). A sector must be first erased before it can be reprogrammed. While in the internal erase mode, WE VIH VIL X VIH VIH VIH Command Sequence The V29C51000T/V29C51000B does not provide the “reset” feature to return the chip to its normal state when an incomplete command sequence or an interruption has happened. In this case, normal operation (Read Mode) can be restored by issuing a “ non-existent ” c ommand sequence, for example Address: 5555H, Data FFH. Table 1. Operation Modes Decoding Decoding Mode Read Program Standby Autoselect Device ID Autoselect Manufacture ID Output Disable CE VIL VIL VIH VIL VIL VIL OE VIL VIH X VIL VIL VIH A0 A0 A0 X VIH VIL X A1 A1 A1 X VIL VIL X A9 A9 A9 X VH VH X I/O READ PD HIGH-Z CODE CODE HIGH-Z NOTES: 1. X = Don’t Care, VIH = HIGH, VIL = LOW. 2. PD: The data at the byte address to be programmed. V29C51000T/V29C51000B Rev. 0.5 October 2000 9 MOSEL VITELIC Table 2. Command Codes First Bus Program Cycle Command Sequence Read Read Autoselect Address XXXXH 5555H 5555H Data F0H AAH AAH 2AAAH 2AAAH 55H 55H 5555H 5555H F0H 90H RA 00H 01H RD 40H Second Bus Program Cycle Address Data Third Bus Program Cycle Address Data Fourth Bus Program Cycle Address Data V29C51000T/V29C51000B Fifth Bus Program Cycle Address Data Six Bus Program Cycle Address Data 00H(1) A0H(2) PD(4) Byte Program Chip Erase 5555H AAH 2AAAH 55H 5555H A0H PA 5555H AAH AAH 2AAAH 2AAAH 55H 55H 5555H 5555H 80H 80H 5555H 5555H AAH AAH 2AAAH 2AAAH 55H 55H 5555H PA(3) 10H 30H Sector Erase 5555H NOTES: 1. Top Boot Sector 2. Bottom Boot Sector 3. PA: The address of the memory location to be programmed. 4. PD: The data at the byte address to be programmed. the device ignores any program attempt into the device. The internal erase completion can be determined via DATA polling or toggle bit. The V29C51000T/V29C51000B is shipped with pre-erased sectors (all bits = 1). attempt to read the device will received the complement of the loaded data on I/O7. Once the program cycle is completed, I/O7 will show true data, and the device is then ready for the next cycle. Chip Erase Cycle The V29C51000T/V29C51000B features a chiperase operation. The chip erase operation is initiated by using a specific six-bus-cycle sequence: two unlock program cycles, a setup command, two additional unlock program cycles, and the chip erase command (see Table 2). The chip erase operation is performed sequentially, one sector at a time. When the automated on chip erase algorithm is requested with the chip erase command sequence, the device automatically programs and verifies the entire memory array for an all zero pattern prior to erasure The automatic erase begins on the rising edge of the last WE or CE pulse in the command sequence and terminates when the data on DQ7 is “1”. Toggle Bit (I/O6) T he V29C51000T/V29C51000B also features another method for determining the end of a program cycle. When the device is in the program cycle, any attempt to read the device will result in l/O6 toggling between 1 and 0. Once the program is completed, the toggling will stop. The device is then ready for the next operation. Examining the toggle bit may begin at any time during a program cycle. Boot Block Protection The V29C51000T/V29C51000B features hardware Boot Block Protection. This feature will prevent erasing/programming of data in the Boot Block once the feature is enabled (see Table 3). The device is shipped with the Boot Block unprotected. Program Cycle Status Detection There are two methods for determining the state of the V29C51000T/V29C51000B during a program (erase/program) cycle: DATA P olling (I/O7) and Toggle Bit (I/O6). Autoselect T he V29C51000T/V29C51000B features an Autoselect mode to identify t he Boot Block (protected/unprotected), the Device (Top/Bottom), and the manufacturer ID. To get to the Autoselect mode, a high voltage (VH) must be applied to the A9 pin. Once the A9 signal is returned to LOW or HIGH, the device will return to the previous mode. 10 DATA Polling (I/O7) The V29C51000T/V29C51000B features DATA polling to indicate the end of a program cycle. When the device is in the program cycle, any V29C51000T/V29C51000B Rev. 0.5 October 2000 MOSEL VITELIC Boot Block Detection I n Autoselect mode, performing a read at address 3CXX2H or address 0CXX2H will indicate if the Top Boot Block sector or the Bottom Boot Block sector is locked out. If the data is 01H, the Top/Bottom Boot Block is protected. If the data is 00H, the Top/Bottom Boot Block is unprotected. (see Table 3.) V29C51000T/V29C51000B Manufacturer ID I n Autoselect mode, performing a read at address. XXXX0H will determine the manufacturer ID. 40H is the manufacturer code for Mosel Vitelic Flash. In addition the manufacturer ID can also be read via the command register when the device is erased or programmed in a system without applying high voltage to the A9 pin. when A0 is LOW, the manufacturer ID is presented at the outputs. Device ID In Autoselect mode, performing a read at address XXXXH will determine whether the device is a Top Boot Block device or a Bottom Boot Block device. If the data is 00H, the device is a Top Boot Block. If the data is A0H, the device is a Bottom Boot Block device (see Table 3). In addition, the device ID can also be read via the command register when the device is erased or programmed in a system without applying high voltage to the A9 pin. When A0 is HIGH, the device ID is presented at the outputs. Hardware Data Protection VCC Sense Protection: the program operation is inhibited when VCC is less than 2.5V. Noise Protection: a CE or WE pulse of less than 5ns will not initiate a program cycle. Program Inhibit Protection: holding any one of OE LOW, CE HIGH or WE HIGH inhibits a program cycle. Table 3. Autoselect Decoding Address Decoding Mode Boot Block Protection Boot Block Top Bottom A0 VIL VIL VIH A1 VIH VIH VIL A2–A13 X X X A14–A17 VIH VIL X Data I/O0–I/O7 01H: protected 00H: unprotected 01H 00H Device ID Top Bottom Manufacture ID NOTE: 1. X = Don’t Care, VIH = HIGH, VIL = LOW. VIL VIL X X A0H V29C51000T/V29C51000B Rev. 0.5 October 2000 11 MOSEL VITELIC Byte Program Algorithm Write Program Command Sequence V29C51000T/V29C51000B Chip/Sector Erase Algorithm Write Erase Command Sequence Add/Data 5555H/AAH Add/Data 5555H/AAH 2AAAH/55H Four Bus Cycle Sequence 5555H/A0H 2AAAH/55H 5555H/80H Six Bus Cycle Sequence PA/PD 5555H/AAH DATA Polling (I/O7) or Toggle Bit (I/O6) 2AAAH/55H No Verify Byte? 5555H/10H (Chip Erase) PA/30H (Sector Erase Yes Programming Completed DATA Polling or Toggle Bit Successfully Completed Erase Complete 51000-14 V29C51000T/V29C51000B Rev. 0.5 October 2000 12 MOSEL VITELIC DATA Polling Algorithm Read I/O7 Address = PBA(1) V29C51000T/V29C51000B Toggle Bit Algorithm Read I/O6 No I/O7 = Data Read I/O6 Yes Yes Program Done No I/O6 Toggle Program Done 51000-15 NOTE: 1. PBA: The byte address to be programmed. V29C51000T/V29C51000B Rev. 0.5 October 2000 13 MOSEL VITELIC Package Diagrams 32-pin Plastic DIP 1.660 MAX. V29C51000T/V29C51000B 15° MAX INDEX-1 EJECTOR MARK 0.545/0.555 INDEX-2 .600 TYP +.004 .010 – .0004 .050 MAX 0.210 MAX 0.120 MIN .100 TYP +.012 .047 – 0 +.006 .018 – .002 0.010 MIN .032 +.012 –0 32-pin PLCC 20 19 18 21 22 23 24 25 26 27 28 29 30 31 32 1 2 3 4 17 16 15 14 13 12 11 10 9 8 7 6 5 .550 ± .003 .590 ± .005 .045X45° .450 ± .003 .490 ± .005 .050 TYP .110 .136 ± .003 .046 ± .003 .025 30° .017 3° - 6° .420 ± .003 3° - 6° 3° - 6° V29C51000T/V29C51000B Rev. 0.5 October 2000 14 MOSEL VITELIC 32-pin TSOP-I Units in inches 0.787 ± 0.008 V29C51000T/V29C51000B Detail “A” 0.010 0.315 TYP. (0.319 MAX.) 0.024 ± 0.004 0.724 TYP. (0.728 MAX.) SEATING PLANE See Detail “A” 0.005 MIN. 0.007 MAX. 0.032 TYP. 0.020 MAX. 0.020 SBC 0.003 MAX 0.009 ± 0.002 0.035 ± 0.002 0.047 MAX. V29C51000T/V29C51000B Rev. 0.5 October 2000 15 MOSEL VITELIC U.S.A. 3910 NORTH FIRST STREET SAN JOSE, CA 95134 PHONE: 408-433-6000 FAX: 408-433-0952 WORLDWIDE OFFICES TAIWAN 7F, NO. 102 MIN-CHUAN E. ROAD, SEC. 3 TAIPEI PHONE: 886-2-2545-1213 FAX: 886-2-2545-1209 NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888 FAX: 886-3-566-5888 V29C51000T/V29C51000B UK & IRELAND SUITE 50, GROVEWOOD BUSINESS CENTRE STRATHCLYDE BUSINESS PARK BELLSHILL, LANARKSHIRE, SCOTLAND, ML4 3NQ PHONE: 44-1698-748515 FAX: 44-1698-748516 SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 PHONE: 65-3231801 FAX: 65-3237013 HONG KONG 19 DAI FU STREET TAIPO INDUSTRIAL ESTATE TAIPO, NT, HONG KONG PHONE: 852-2666-3307 FAX: 852-2770-8011 JAPAN ONZE 1852 BUILDING 6F 2-14-6 SHINTOMI, CHUO-KU TOKYO 104-0041 PHONE: 03-3537-1400 FAX: 03-3537-1402 GERMANY (CONTINENTAL EUROPE & ISRAEL) BENZSTRASSE 32 71083 HERRENBERG GERMANY PHONE: +49 7032 2796-0 FAX: +49 7032 2796 22 U.S. SALES OFFICES NORTHWESTERN 3910 NORTH FIRST STREET SAN JOSE, CA 95134 PHONE: 408-433-6000 FAX: 408-433-0952 SOUTHWESTERN 302 N. EL CAMINO REAL #200 SAN CLEMENTE, CA 92672 PHONE: 949-361-7873 FAX: 949-361-7807 CENTRAL, NORTHEASTERN & SOUTHEASTERN 604 FIELDWOOD CIRCLE RICHARDSON, TX 75081 PHONE: 972-690-1402 FAX: 972-690-0341 © Copyright 2000, MOSEL VITELIC Inc. 10/00 Printed in U.S.A. The information in this document is subject to change without notice. MOSEL VITELIC makes no commitment to update or keep current the information contained in this document. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of MOSEL-VITELIC. MOSEL VITELIC subjects its products to normal quality control sampling techniques which are intended to provide an assurance of high quality products suitable for usual commercial applications. MOSEL VITELIC does not do testing appropriate to provide 100% product quality assurance and does not assume any liability for consequential or incidental arising from any use of its products. If such products are to be used in applications in which personal injury might occur from failure, purchaser must do its own quality assurance testing appropriate to such applications. MOSEL VITELIC 3910 N. First Street, San Jose, CA 95134-1501 Ph: (408) 433-6000 Fax: (408) 433-0952 Tlx: 371-9461