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S10C35CE

S10C35CE

  • 厂商:

    MOSPEC

  • 封装:

  • 描述:

    S10C35CE - Schottky Barrier Rectifiers - Mospec Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
S10C35CE 数据手册
MOSPEC Schottky Barrier Rectifiers S10C30CE thru S10C60CE SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 30-60 VOLTS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. *Low Forward Voltage. *Low Switching noise. *High Current Capacity *Guarantee Reverse Avalanche. *Guard-Ring for Stress Protection. *Low Power Loss & High efficiency. *150℃ Operating Junction Temperature *Low Stored Charge Majority Carrier Conduction. *Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O TO-220AB MAXIMUM RATINGS Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectifier Forward Current Total Device (Rated VR), TC=100℃ Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) Operating and Storage Junction Temperature Range Symbol VRRM VRW M VR VR(RMS) IF(AV) S10C 30CE 35CE 40CE 45CE 50CE 60CE 30 35 40 45 50 60 V Unit 21 25 28 5.0 10 10 32 35 42 V DIM A IFM A IFSM 125 A TJ , Tstg -65 to +150 ℃ A B C D E F G H I J K L M O MILLIMETERS MIN MAX 14.68 15.32 9.78 10.42 5.02 6.52 13.06 14.62 3.57 4.07 2.42 2.66 1.12 1.36 0.72 0.96 4.22 4.98 1.14 1.38 2.20 2.98 0.33 0.55 2.48 2.98 3.70 3.90 ELECTRIAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage ( IF =5.0 Amp TC = 25℃) ( IF =5.0 Amp TC = 125℃) Maximum Instantaneous Reverse Current ( Rated DC Voltage, TC = 25℃) ( Rated DC Voltage, TC = 125℃) Symbol S10C 30CE 35CE 40CE 45CE 50CE 60CE VF 0.57 0.46 0.70 0.52 V Common cathode Suffix “C” Unit IR 0.5 20 mA S10C30CE thru S10C60CE FIG-1 FORWARD CURRENT DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT (Amp.) NSTANTANEOUS FORWARD CURRENT (Amp.) FIG-2 TYPICAL FORWARD CHARACTERISITICS S10C30CE-45CE S10C50CE,60CE CASE TEMPERATURE (℃) FORWARD VOLTAGE (Volts) FIG-3 TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT (mA.) FIG-4 TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE (PF) S10C30CE-45CE S10C30CE-45CE S10C50CE,60CE S10C50CE,60C E PERCENT OF RATED REVERSE VOLTAGE (﹪) REVERSE VOLTAGE (Volts) FIG-5 PEAK FORWARD SURGE CURRENT CURRENT (Amp.) PEAK FORWARD SURGE NUMBER OF CYCLES AT 60 Hz
S10C35CE
物料型号: - S10C30CE至S10C60CE是肖特基势垒整流器,使用钼势垒金属,具有外延结构、氧化物钝化和金属覆盖层接触。

器件简介: - 这些器件适用于低电压、高频率整流,或作为自由轮流通路和极性保护二极管。

引脚分配: - 封装类型为TO-220AB。

参数特性: - 最大重复反向电压(VRRM):30V至60V不等。 - 工作峰值反向电压(VRWM):与VRRM相同。 - 直流阻断电压(VR):与VRRM相同。 - 有效值反向电压(VR(RMS)):21V至42V不等。 - 平均整流前向电流(IF(AV)):5.0A至10A不等。 - 最大重复前向电流(IFM):10A。 - 非重复峰值浪涌电流(IFSM):125A。 - 工作和储存结温范围(TJ,Tstg):-65至+150摄氏度。

功能详解: - 低正向电压、低开关噪声、高电流容量、保证反向雪崩、应力保护的防护环、低功耗高效率、150摄氏度工作结温、低存储电荷的多数载流子导电。

应用信息: - 适用于需要低电压、高频率整流的应用场合,或作为自由轮流通路和极性保护二极管使用。

封装信息: - 封装类型为TO-220AB,具体尺寸参数如下(单位:毫米): - A: 14.68至15.32(最小至最大) - B: 9.78至10.42 - ...(其他尺寸参数依此类推)
S10C35CE 价格&库存

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