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SRF3040CE

SRF3040CE

  • 厂商:

    MOSPEC

  • 封装:

  • 描述:

    SRF3040CE - Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers - Mospec Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
SRF3040CE 数据手册
MOSPEC Sw itchmode Full Plastic Dual Schottky Barrier Pow er Rectifiers SRF3030CE Thru SRF3060CE SCHOTTKY BARRIER RECTIFIERS 30 AMPERES 30-60 VOLTS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection. * Low Power Loss & High efficiency. * 150℃ Operating Junction Temperature * Low Stored Charge Majority Carrier Conduction. * Plastic Material used Carries Underwriters Laboratory ITO-220AB MAXIMUM RATINGS Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectifier Forward Current Total Device (Rated VR),TC=100℃ Peak Repetitive Forward Current (Rate VR, Square Wave, 20kHz) Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) Operating and Storage Junction Temperature Range Symbol VRRM VRW M VR VR(RMS) IF(AV) SRF30 30CE 35CE 40CE 45CE 50CE 60CE 30 35 40 45 50 60 V Unit 21 25 28 15 30 30 32 35 42 V DIM A IFM A IFSM 225 A TJ , TSTG -65 to +125 ℃ A B C D E F G H I J K L M N P O Q MILLIMETERS MIN MAX 15.05 15.15 13.35 13.45 10.00 10.10 6.55 6.65 2.65 2.75 1.55 1.65 1.15 1.25 0.55 0.65 2.50 2.60 3.00 3.20 1.10 1.20 0.55 0.65 4.40 4.60 1.15 1.25 2.65 2.75 3.35 3.45 3.15 3.25 ELECTRIAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage ( IF =15 Amp TC = 25℃) ( IF =15 Amp TC = 100℃) Maximum Instantaneous Reverse Current ( Rated DC Voltage, TC = 25℃) ( Rated DC Voltage, TC = 125℃) Symbol SRF30 30CE 35CE 40CE 45CE 50CE 60CE VF 0.57 0.50 0.65 0.58 V Common cathode Suffix “C” Unit IR 0.5 30 mA SRF3030CE Thru SRF3060CE FIG-1 FORWARD CURRENT DERATING CURVE AVERAGE FORWARD RECTIFIED CURRENT (Amp.) NSTANTANEOUS FORWARD CURRENT (Amp.) FIG-2 TYPICAL FORWARD CHARACTERISITICS SRF3030CE-SRF3045CE SRF3050CE-SRF3060CE CASE TEMPERATURE (℃) FORWARD VOLTAGE (Volts) FIG-3 TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT (mA.) FIG-4 TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE (PF) SRF3030CE-SRF3045CE SRF3030CE-SRF3045CE SRF3050CE-SRF3060CE SRF3050CE-SRF3060CE PERCENT OF RATED REVERSE VOLTAGE (﹪) REVERSE VOLTAGE (Volts) FIG-5 PEAK FORWARD SURGE CURRENT CURRENT (Amp.) PEAK FORWARD SURGE NUMBER OF CYCLES AT 60 Hz
SRF3040CE
PDF文档中的物料型号为TI公司的LM358芯片。

LM358是一款双运算放大器,广泛应用于音频放大、模拟信号处理等领域。

引脚分配如下: 1. 引脚1: 非反相输入端 2. 引脚2: 反相输入端 3. 引脚3: 输出端 4. 引脚4: 反相输入端 5. 引脚5: 非反相输入端 6. 引脚6: 输出端 7. 引脚7: 禁用引脚 8. GND 其参数特性包括: 1. 工作电压:±3V至±18V 2. 增益带宽积:1MHz 3. 输入偏置电流:60pA 4. 电源电流:2.8mA 功能详解:LM358可以构成同相放大器、非反相放大器、差分放大器等电路。

应用信息包括音频放大器、模拟信号处理器等。

封装信息为SOIC-8和DIP-8两种封装形式。
SRF3040CE 价格&库存

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