2N6576

2H6576 2H6577 2N6578 I NPN SILICON POWER DARLINGTON General-purpose EpiBase power darl ington TRANSISTORS transistors, suitable for linear and switching Replacement applications. and Driver for 2N3055 High Gain Darlington Built-In Performance for Reverse Polarity Logic Protection Diode Protection Can Be Driven from Popular Voltage Operating Low-Level Range to t200°C Range – -65 I Total Power Dissipation Derate above 25°C @ Tc = 25°C —120— A ~-65 0.685 — ~ Watts Wloc LFA’~l*c ~ _; STYLEi: PIN 1. BASE 2. EMITTER CASE: OLLECTOR C Q H B DIM T ‘~~> SEATING PLANE & I ! Y Operating and Storage Junction,+~~!{i‘3* TJ ,T~tg ~., ,., ‘~:p.! ,y, , Temperature Range to t200 Oc ‘ 4 F J THERMAL CHARAC,@~lS*~CS ~T\>U... : Character& l&~.s$s” to Case for Soldering Symbol R~JC TL Max 1.46 265 Unit Thermal Maximum , flesistang~+~~~$ion Lea@T~~&ature Oclw ‘c Purposq#N4 j$~’ }rom Case for 10s. MILLIMETERS I INCHES MIN I MAX I MIN MAX I I DAR LINGTON SCHEMATIC Collector ~----Base d! it 1 CASE 11-03 TO-3 ‘4’ =150’ Lz4 k__ ~ J Emitter Epi Base is a Trademerk ,...,,,, of Motorole Inc. I. ~MOTOROLAINC., 197a u> 6JD3 (Replaces AD I 327) -- ---- *ELECTRICAL characteristics Characteristic (TC = 25°c unless otherwise noted.) symbol Min I Max I Unit I I OFF CHARACTERISTICS Collector-Emitter ([c= 200mAdc, Sustaining IB =0) Voltage(l) 2N6576 2N6577 A., fi --- VCEO($”s) 60 Vdc 1 II v- I I ,Lcu I — Collector (VCER Collector VCEX Collector Cutoff Current Value, RBE = 10,kQ, TC = 150°C) ICEV V’alue, VgE(off) = 1.5 Vdc) ICBO — .~~,,+ ~~,,,t~~ ,,< r,, ,-u,.~l, ... .:> . >. +.. , ~:~,>;$~ mAdc ‘\:?i=“’i~$~j,, ~.~’~ %*,.,,, .. .@ie>;, ., ~,s;ti~.,. \~~ ,., i,” ..3$$’ ‘%ti 2 ,.i\._ 5,000 20,000 – Vdc (1C = 4.0 Adc, VCE = 3.0 Vdcl (IC = 0.4 Adc, VCE = 3.0 Vdc) Collector-Emitter ([c= Saturation Voltage (IC = 15 Adc, IB= 0.15 Adc) Adc) Voltage Adc) Drop 10 Adc, IB=O.l Saturation ‘::*,,,, ,,.:.~~} >,::$ ,-.J \,.t. ,$$.~.,.’ ~,:sv;g~wt) ~.~:> ~:: .,tJ.,. . \,,\\?, VF, “.’jJ, ‘ , .+~f&&T;.\.~?.>,&:*:i?t+ ,a,l, s, ,.,, *t:. ***,, , , .;,? ., Adc, Ihfel 10 200 — (IC = 3.0 Adc, VCE = 3.0 Vdc; f,= 1.0 MHz) SWITCHING RESISTIVE Delay Time Rise Time Storage Time Fall Time * Indicates JEDEC CHARACTERISTICS LOAD (Figure 2) (Vcc = 30 Vdc, IC =’10 Ad$;$~~8.1 CVCl$a*3~@~+ td tr — — — — 0.15 1.0 ~ #s Ps Ps ps tp = 300 PS, Dutv (Vcc = 30 Vdc, IC ‘i~~~~’YIBl = IB2= 0.1 Adc, t~ tf tp = 300 ps, DuK$~v’c~&+@ 2.0%) $i ,i~ ..,&$~&:#::’ Registered Data $’ Cvcle < 2.0%. 2.0 7.0 (1) Pulse test: Pulse Width < 30,Q,4/$~&&& .:?. , ,,\\ ~:\t;\: -%?. ,;$ l\:)~? ,>? ,:.,/ ,., FIGURE 1 – ~’~fij@ORWARD SA,~@;&’%ATING AREA There are two limitations on the power handling abilitv of BIASED a transistor: average junction temperature IC-VCE and second breakdown. limits of the transisi.e., the transistor than TJ(pk) the curves is variable are Safe operating must not area curves indicate to greater tor that must be’observed be subjected indicate. for reliable operation; dissipation The data of Figure 1 is based on Tc = 25°C; I % 1.o~-”B~ndingwirsLimit JUwll !- depending TJ(pk) on power level. Second breakdown pulse I imits valid for duty cycles to 10%. may be calculated thermal to values from the data in Figure 7. At high will reduce the power that the limitations imposed by case temperatures can be handled second breakdown. limitations less than ,. ‘L VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) ~ MOTOROLA Semiconductor Products /nc. FIGURE 2– DC CURRENT GAIN FIGURE”3 – COLLECTOR-SATURATION REGION 5UU - -JUQL- 1 \ 200 1 I 0.2 I I I I I I II I 0.5 T,0 I .2.0 I I [ I I I II 5:0 “lo \l 15 Ic, COLLECTORCURRENT (AMPS) FIGURE 4 – COLLECTOR SATURATION VOLTAGE 1 ~ ‘i”’ I I I I U.UL ---.. ---,-. I ,,.L @Jc(t) r(t)eJc oJc = 1.46 m ti DcuRvESAPPLYFORPOWER = ‘ 0.01 0,2 0,3 0,5 0.7 1,0 2.0 3,0 , I I 1 I I 1 I I I 1 1 11 I I II I 5.0 11111! ti iii 0.01 0.1 I 7.0 10 t, TIME (msl 20 30 I I 50 I I 70 Ill 100 I [ I 200 I 300 I I I Ill] 500 700 1000 m MOTOROLA SemiconductorProductsInc. -,:,:, .,, ., , ,, .,, ,’ ,’.. ., q a q q : ,, FIGURE 7WITCHING TIMES TEST CIRCUIT -9.0 tr, Dutv tf