4N35

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N35/D GlobalOptoisolator™ 6-Pin DIP Optoisolators Transistor Output The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Current Transfer Ratio — 100% Minimum @ Specified Conditions • Guaranteed Switching Speeds • Meets or Exceeds all JEDEC Registered Specifications • To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option. Applications • General Purpose Switching Circuits • Interfacing and coupling systems of different potentials and impedances • Regulation Feedback Circuits • Monitor & Detection Circuits • Solid State Relays MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating INPUT LED Reverse Voltage Forward Current — Continuous LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C OUTPUT TRANSISTOR Collector–Emitter Voltage Emitter–Base Voltage Collector–Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C TOTAL DEVICE Isolation Source Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range(2) Storage Temperature Range(2) Soldering Temperature (10 sec, 1/16″ from case) VISO PD TA Tstg TL 7500 250 2.94 – 55 to +100 – 55 to +150 260 Vac(pk) mW mW/°C °C °C °C VCEO VEBO VCBO IC PD 30 7 70 150 150 1.76 Volts Volts Volts mA mW mW/°C VR IF PD 6 60 120 1.41 Volts mA mW mW/°C 2 3 Symbol Value Unit 1 [CTR = 100% Min] 4N35 * 4N36 4N37 *Motorola Preferred Device STYLE 1 PLASTIC 6 1 STANDARD THRU HOLE CASE 730A–04 SCHEMATIC 6 5 4 PIN 1. 2. 3. 4. 5. 6. LED ANODE LED CATHODE N.C. EMITTER COLLECTOR BASE 1. Isolation surge voltage is an internal device dielectric breakdown rating. 1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions. Preferred devices are Motorola recommended choices for future use and best overall value. GlobalOptoisolator is a trademark of Motorola, Inc. REV 2 ©MotorolaInc. 1995 Motorola, Optoelectronics Device Data 1 4N35 4N36 4N37 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1) Characteristic INPUT LED Forward Voltage (IF = 10 mA) TA = 25°C TA = –55°C TA = 100°C VF 0.8 0.9 0.7 — — 1.15 1.3 1.05 — 18 1.5 1.7 1.4 10 — V Symbol Min Typ(1) Max Unit Reverse Leakage Current (VR = 6 V) Capacitance (V = 0 V, f = 1 MHz) OUTPUT TRANSISTOR Collector–Emitter Dark Current (VCE = 10 V, TA = 25°C) Collector–Emitter Dark Current (VCE = 30 V, TA = 100°C) Collector–Base Dark Current (VCB = 10 V) Collector–Emitter Breakdown Voltage (IC = 1 mA) Collector–Base Breakdown Voltage (IC = 100 µA) Emitter–Base Breakdown Voltage (IE = 100 µA) DC Current Gain (IC = 2 mA, VCE = 5 V) Collector–Emitter Capacitance (f = 1 MHz, VCE = 0) Collector–Base Capacitance (f = 1 MHz, VCB = 0) Emitter–Base Capacitance (f = 1 MHz, VEB = 0) COUPLED Output Collector Current (IF = 10 mA, VCE = 10 V) TA = 25°C TA = –55°C TA = 100°C TA = 25°C TA = 100°C IR CJ µA pF ICEO ICBO V(BR)CEO V(BR)CBO V(BR)EBO hFE CCE CCB CEB IC (CTR)(2) — — — 30 70 7 — — — — 1 — 0.2 100 45 100 7.8 400 7 19 9 50 500 20 — — — — — — — — nA µA nA V V V — pF pF pF 10 (100) 4 (40) 4 (40) — — — — — 7500 — — — 1011 — 30 (300) — — 0.14 7.5 5.7 3.2 4.7 — — — 8 — 0.2 — — — 0.3 10 10 — — — 100 100 100 — 2 mA (%) Collector–Emitter Saturation Voltage (IC = 0.5 mA, IF = 10 mA) Turn–On Time Turn–Off Time Rise Time Fall Time Isolation Voltage (f = 60 Hz, t = 1 sec) Isolation Current(4) (VI–O = 3550 Vpk) Isolation Current (VI–O = 2500 Vpk) Isolation Current (VI–O = 1500 Vpk) Isolation Resistance (V = 500 V)(4) Isolation Capacitance (V = 0 V, f = 1 MHz)(4) 1. 2. 3. 4. 4N35 4N36 4N37 (IC = 2 mA, VCC = 10 V, RL = 100 Ω)(3) VCE(sat) ton toff tr tf VISO IISO V µs Vac(pk) µA RISO CISO Ω pF Always design to the specified minimum/maximum electrical limits (where applicable). Current Transfer Ratio (CTR) = IC/IF x 100%. For test circuit setup and waveforms, refer to Figure 11. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common. 2 Motorola Optoelectronics Device Data 4N35 4N36 4N37 TYPICAL CHARACTERISTICS 2 VF, FORWARD VOLTAGE (VOLTS) PULSE ONLY PULSE OR DC 1.8 I C, OUTPUT COLLECTOR CURRENT (NORMALIZED) 10 NORMALIZED TO: IF = 10 mA 1 1.6 1.4 TA = –55°C 25°C 100°C 1 10 100 IF, LED FORWARD CURRENT (mA) 1000 1.2 1 0.1 0.01 0.5 1 2 5 10 20 IF, LED INPUT CURRENT (mA) 50 Figure 1. LED Forward Voltage versus Forward Current I C , OUTPUT COLLECTOR CURRENT (NORMALIZED) Figure 2. Output Current versus Input Current 28 IC , COLLECTOR CURRENT (mA) 24 20 16 5 mA 12 8 4 0 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 2 mA 1 mA 9 10 IF = 10 mA 10 7 5 2 1 0.7 0.5 0.2 0.1 –60 –40 –20 0 20 40 60 80 TA, AMBIENT TEMPERATURE (°C) 100 NORMALIZED TO TA = 25°C Figure 3. Collector Current versus Collector–Emitter Voltage Figure 4. Output Current versus Ambient Temperature ICEO, COLLECTOR–EMITTER DARK CURRENT (NORMALIZED) 100 NORMALIZED TO: VCE = 10 V TA = 25°C t, TIME (µs) 50 20 10 5 2 1 0.1 RL = 1000 RL = 100 VCC = 10 V 100 10 VCE = 30 V 1 10 V 0 20 40 60 TA, AMBIENT TEMPERATURE (°C) 80 100 { { tr tf tf tr 0.1 0.2 0.5 1 2 5 10 20 IF, LED INPUT CURRENT (mA) 50 100 Figure 5. Dark Current versus Ambient Temperature Figure 6. Rise and Fall Times (Typical Values) Motorola Optoelectronics Device Data 3 4N35 4N36 4N37 100 70 50 t on, TURN–ON TIME ( µs) 20 10 7 5 RL = 1000 100 10 VCC = 10 V 100 70 50 t off , TURN–OFF TIME ( µ s) 20 RL = 1000 10 7 5 100 10 2 0.2 0.5 0.7 1 2 5 7 10 IF, LED INPUT CURRENT (mA) 20 50 70 100 1 0.1 0.2 0.5 0.7 1 2 5 7 10 IF, LED INPUT CURRENT (mA) 20 50 70 100 VCC = 10 V 2 1 0.1 Figure 7. Turn–On Switching Times I C , TYPICAL COLLECTOR CURRENT (mA) 4 IF = 0 3 20 IB = 7 µA 6 µA C, CAPACITANCE (pF) 5 µA 2 4 µA 3 µA 1 2 µA 1 µA 0 2 4 6 8 10 12 14 16 18 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 20 18 16 14 12 10 8 6 4 2 0 0.05 0.1 Figure 8. Turn–Off Switching Times CLED CCB f = 1 MHz CEB CCE 0.2 0.5 1 2 5 V, VOLTAGE (VOLTS) 10 20 50 Figure 9. DC Current Gain (Detector Only) Figure 10. Capacitances versus Voltage TEST CIRCUIT VCC = 10 V IC INPUT INPUT CURRENT ADJUSTED TO ACHIEVE IC = 2 mA. RL = 100 Ω 10% OUTPUT WAVEFORMS INPUT PULSE OUTPUT PULSE 90% tr ton tf toff Figure 11. Switching Time Test Circuit and Waveforms 4 Motorola Optoelectronics Device Data 4N35 4N36 4N37 PACKAGE DIMENSIONS –A– 6 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. DIM A B C D E F G J K L M N INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.008 0.012 0.100 0.150 0.300 BSC 0_ 15 _ 0.015 0.100 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.21 0.30 2.54 3.81 7.62 BSC 0_ 15 _ 0.38 2.54 –B– 1 3 F 4 PL N C L –T– SEATING PLANE K G J 6 PL 0.13 (0.005) TA M M E 6 PL D 6 PL 0.13 (0.005) M M TB M A M B M STYLE 1: PIN 1. 2. 3. 4. 5. 6. ANODE CATHODE NC EMITTER COLLECTOR BASE CASE 730A–04 ISSUE G –A– 6 1 4 –B– 3 S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.020 0.025 0.008 0.012 0.006 0.035 0.320 BSC 0.332 0.390 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.51 0.63 0.20 0.30 0.16 0.88 8.13 BSC 8.43 9.90 F 4 PL H C L –T– G E 6 PL D 6 PL 0.13 (0.005) M J K 6 PL 0.13 (0.005) TA M M SEATING PLANE TB M A M B M DIM A B C D E F G H J K L S CASE 730C–04 ISSUE D *Consult factory for leadform option availability Motorola Optoelectronics Device Data 5 4N35 4N36 4N37 –A– 6 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. DIM A B C D E F G J K L N INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.008 0.012 0.100 0.150 0.400 0.425 0.015 0.040 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.21 0.30 2.54 3.81 10.16 10.80 0.38 1.02 –B– 1 3 F 4 PL N C L –T– SEATING PLANE G D 6 PL K 0.13 (0.005) M J TA M E 6 PL B M *Consult factory for leadform option availability CASE 730D–05 ISSUE D Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Optoelectronics Device Data 4N35/D *4N35/D*