BC847BLT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC846ALT1/D General Purpose Transistors BC846ALT1,BLT1 BC847ALT1, COLLECTOR 3 NPN Silicon 1 BASE BLT1,CLT1 thru BC850ALT1,BLT1, CLT1 BC846, BC847 and BC848 are Motorola Preferred Devices MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC BC846 65 80 6.0 100 BC847 BC850 45 50 6.0 100 BC848 BC849 30 30 5.0 100 2 EMITTER Unit V V V mAdc 1 2 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 mW mW/°C °C/W °C 556 mW mW/°C °C/W Max Unit CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) DEVICE MARKING BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F; BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850A,B,C BC848A,B,C, BC849A,B,C Collector – Emitter Breakdown Voltage BC846A,B (IC = 10 µA, VEB = 0) BC847A,B,C, BC850A,B,C BC848A,B,C, BC849A,B,C Collector – Base Breakdown Voltage (IC = 10 mA) Emitter – Base Breakdown Voltage (IE = 1.0 mA) BC846A,B BC847A,B,C, BC850A,B,C BC848A,B,C, BC849A,B,C BC846A,B BC847A,B,C BC848A,B,C, BC849A,B,C, BC850A,B,C V(BR)CEO 65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 — — — — — — — — — — — — — — — — — — — — — — — — — — — — 15 5.0 V V(BR)CES V V(BR)CBO V V(BR)EBO V Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) 1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. ICBO nA µA Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BC846ALT1, BLT1 BC847ALT1, BLT1, CLT1 thru BC850ALT1, BLT1, CLT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (IC = 10 µA, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC846A, BC847A, BC848A, BC849A, BC850A BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C, BC850C VCE(sat) VBE(sat) VBE(on) hFE — — — 110 200 420 — — — — 580 — 90 150 270 180 290 520 — — 0.7 0.9 660 — — — — 220 450 800 0.25 0.6 — — 700 770 V V mV — (IC = 2.0 mA, VCE = 5.0 V) Collector – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base – Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base – Emitter Voltage (IC = 10 mA, VCE = 5.0 V) SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC849A,B,C, BC850A,B,C 1.0 VCE = 10 V TA = 25°C V, VOLTAGE (VOLTS) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 VBE(on) @ VCE = 10 V TA = 25°C VBE(sat) @ IC/IB = 10 fT Cobo NF — — — — 10 4.0 100 — — — — 4.5 MHz pF dB 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 Figure 1. Normalized DC Current Gain 2.0 VCE , COLLECTOR–EMITTER VOLTAGE (V) TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = IC = 50 mA 10 mA 20 mA 0.8 IC = 100 mA θVB, TEMPERATURE COEFFICIENT (mV/ °C) 1.0 Figure 2. “Saturation” and “On” Voltages –55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0.4 0 0.02 0.1 1.0 IB, BASE CURRENT (mA) 10 20 0.2 10 1.0 IC, COLLECTOR CURRENT (mA) 100 Figure 3. Collector Saturation Region Figure 4. Base–Emitter Temperature Coefficient 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data BC846ALT1, BLT1 BC847ALT1, BLT1, CLT1 thru BC850ALT1, BLT1, CLT1 BC847/BC848 10 7.0 C, CAPACITANCE (pF) 5.0 Cib TA = 25°C f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) 400 300 200 3.0 Cob 2.0 100 80 60 40 30 20 0.5 0.7 VCE = 10 V TA = 25°C 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 50 Figure 5. Capacitances Figure 6. Current–Gain – Bandwidth Product 1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 5 V TA = 25°C 2.0 1.0 0.5 V, VOLTAGE (VOLTS) TA = 25°C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0.1 0.2 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0 0.2 0.5 1.0 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) 50 100 200 Figure 7. DC Current Gain Figure 8. “On” Voltage VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 2.0 TA = 25°C 1.6 20 mA 1.2 IC = 10 mA 50 mA 100 mA 200 mA θVB, TEMPERATURE COEFFICIENT (mV/ °C) –1.0 –1.4 –1.8 θVB for VBE –2.2 –55°C to 125°C 0.8 0.4 –2.6 0 –3.0 0.2 0.5 10 20 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) 50 100 200 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 Figure 9. Collector Saturation Region Figure 10. Base–Emitter Temperature Coefficient Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 BC846ALT1, BLT1 BC847ALT1, BLT1, CLT1 thru BC850ALT1, BLT1, CLT1 BC846 40 TA = 25°C C, CAPACITANCE (pF) 20 Cib 10 6.0 4.0 Cob f T, CURRENT–GAIN – BANDWIDTH PRODUCT 500 VCE = 5 V TA = 25°C 200 100 50 20 2.0 0.1 0.2 1.0 2.0 10 20 0.5 5.0 VR, REVERSE VOLTAGE (VOLTS) 50 100 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current–Gain – Bandwidth Product 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data BC846ALT1, BLT1 BC847ALT1, BLT1, CLT1 thru BC850ALT1, BLT1, CLT1 INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT–23 POWER DISSIPATION The power dissipation of the SOT–23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150°C – 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad™. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 BC846ALT1, BLT1 BC847ALT1, BLT1, CLT1 thru BC850ALT1, BLT1, CLT1 PACKAGE DIMENSIONS A L 3 BS 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 V G C D H K J DIM A B C D G H J K L S V CASE 318–08 ISSUE AE SOT–23 (TO–236AB) STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ Motorola Small–Signal Transistors, FETs and Diodes Device Data BC846ALT1/D *BC846ALT1/D*