BCW60DLT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCW60ALT1/D General Purpose Transistors NPN Silicon COLLECTOR 3 1 BASE BCW60ALT1 BCW60BLT1 BCW60DLT1 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 32 32 5.0 100 Unit Vdc Vdc Vdc mAdc CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING BCW60ALT1 = AA, BCW60BLT1 = AB, BCW60DLT1 = AD ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 2.0 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 32 Vdc) (VCE = 32 Vdc, TA = 150°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)EBO ICES — — IEBO — 20 20 20 nAdc µAdc nAdc 32 5.0 — — Vdc Vdc   0.062 in.   0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BCW60ALT1 BCW60BLT1 BCW60DLT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 10 µAdc, VCE = 5.0 Vdc) hFE BCW60A BCW60B BCW60D BCW60A BCW60B BCW60D BCW60A BCW60B BCW60D hfe BCW60A BCW60B BCW60D VCE(sat) — — VBE(sat) 0.7 0.6 VBE(on) 0.6 0.75 1.05 0.85 Vdc 0.55 0.35 Vdc 125 175 350 250 350 700 Vdc 20 30 100 120 175 380 60 70 100 — — — 220 310 630 — — — — — (IC = 2.0 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) AC Current Gain (VCE = 5.0 Vdc, IC = 2.0 mAdc, f = 1.0 kHz) Collector – Emitter Saturation Voltage (IC = 50 mAdc, IB = 1.25 mAdc) (IC = 10 mAdc, IB = 0.25 mAdc) Base – Emitter Saturation Voltage (IC = 50 mAdc, IB = 1.25 mAdc) (IC = 50 mAdc, IB = 0.25 mAdc) Base – Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCE = 10 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) fT 125 Cobo — NF — 6.0 4.5 dB — pF MHz SWITCHING CHARACTERISTICS Turn–On Time (IC = 10 mAdc, IB1 = 1.0 mAdc) Turn–Off Time (IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 kΩ, RL = 990 Ω) ton — toff — 800 150 ns ns EQUIVALENT SWITCHING TIME TEST CIRCUITS + 3.0 V 300 ns DUTY CYCLE = 2% – 0.5 V