BCX70JLT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCX70GLT1/D General Purpose Transistors NPN Silicon COLLECTOR 3 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC Value 45 45 5.0 200 Unit Vdc Vdc Vdc mAdc BCX70GLT1 BCX70JLT1 BCX70KLT1 3 1 2 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 – 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C DEVICE MARKING BCX70GLT1 = AG; BCX70JLT1 = AJ; BCX70KLT1 = AK ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 2.0 mAdc, IE= 0) Emitter – Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 32 Vdc) (VCE = 32 Vdc, TA = 150°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)EBO ICES — — IEBO — 20 20 20 nAdc mAdc nAdc 45 5.0 — — Vdc Vdc   0.062 in.   0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BCX70GLT1 BCX70JLT1 BCX70KLT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) hFE BCX70G BCX70J BCX70K BCX70G BCX70J BCX70K BCX70G BCX70J BCX70K VCE(sat) — — VBE(sat) 0.7 0.6 VBE(on) 0.55 1.05 0.85 0.75 Vdc 0.55 0.35 Vdc — 40 100 120 250 380 60 90 100 — — — 220 460 630 — — — Vdc — (IC = 2.0 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) Collector – Emitter Saturation Voltage (IC = 50 mAdc, IB = 1.25 mAdc) (IC = 10 mAdc, IB = 0.25 mAdc) Base – Emitter Saturation Voltage (IC = 50 mAdc, IB = 1.25 mAdc) (IC = 50 mAdc, IB = 0.25 mAdc) Base – Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) SMALL– SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IC = 0, f = 1.0 MHz) Small – Signal Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) BCX70G BCX70J BCX70K NF fT Cobo hfe 125 250 350 — 250 500 700 6.0 dB 125 — — 4.5 MHz pF — Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) SWITCHING CHARACTERISTICS Turn–On Time (IC = 10 mAdc, IB1 = 1.0 mAdc) Turn–Off Time (IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 kΩ, RL = 990Ω) ton toff — — 150 800 ns ns EQUIVALENT SWITCHING TIME TEST CIRCUITS + 3.0 V 300 ns DUTY CYCLE = 2% – 0.5 V