MBD330DWT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBD110DWT1/D Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT–363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small six–leaded package. The SOT–363 is ideal for low–power surface mount applications where board space is at a premium, such as portable products. Surface Mount Comparisons: SOT–363 Area (mm2) Max Package PD (mW) Device Count 4.6 120 2 SOT–23 7.6 225 1 MBD110DWT1 MBD330DWT1 MBD770DWT1 Motorola Preferred Devices 6 5 4 1 2 3 CASE 419B–01, STYLE 6 SOT–363 Space Savings: Package SOT–363 1  SOT–23 40% 2  SOT–23 70% The MBD110DW, MBD330DW, and MBD770DW devices are spin–offs of our popular MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance • Low Reverse Leakage MAXIMUM RATINGS Rating Reverse Voltage MBD110DWT1 MBD330DWT1 MBD770DWT1 Symbol VR Value 7.0 30 70 120 – 55 to +125 – 55 to +150 Unit Vdc Forward Power Dissipation TA = 25°C Junction Temperature Storage Temperature Range PF TJ Tstg mW °C °C DEVICE MARKING MBD110DWT1 = M4 MBD330DWT1 = T4 MBD770DWT1 = H5 Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. © Motorola, Small–Signal Transistors, FETs and Diodes Device Data Motorola Inc. 1996 1 MBD110DWT1 MBD330DWT1 MBD770DWT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) MBD110DWT1 MBD330DWT1 MBD770DWT1 CT MBD110DWT1 CT MBD330DWT1 MBD770DWT1 IR MBD110DWT1 MBD330DWT1 MBD770DWT1 NF MBD110DWT1 VF MBD110DWT1 MBD330DWT1 MBD770DWT1 — — — — — 0.5 0.38 0.52 0.42 0.7 0.6 0.45 0.6 0.5 1.0 — 6.0 — Vdc — — — 0.02 13 9.0 0.25 200 200 — — 0.9 0.5 1.5 1.0 µA nAdc nAdc dB — 0.88 1.0 pF Symbol V(BR)R 7.0 30 70 10 — — — — — pF Min Typ Max Unit Volts Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1) Total Capacitance (VR = 15 Volts, f = 1.0 MHz) (VR = 20 Volts, f = 1.0 MHz) Reverse Leakage (VR = 3.0 V) (VR = 25 V) (VR = 35 V) Noise Figure (f = 1.0 GHz, Note 2) Forward Voltage (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA) 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MBD110DWT1 MBD330DWT1 MBD770DWT1 TYPICAL CHARACTERISTICS MBD110DWT1 1.0 0.7 0.5 IR, REVERSE LEAKAGE (m A) VR = 3.0 Vdc 0.2 0.1 0.07 0.05 100 IF, FORWARD CURRENT (mA) 10 TA = 85°C TA = – 40°C 1.0 TA = 25°C MBD110DWT1 0.02 MBD110DWT1 0.01 30 40 50 60 70 80 90 100 110 TA, AMBIENT TEMPERATURE (°C) 120 130 0.1 0.3 0.4 0.5 0.6 VF, FORWARD VOLTAGE (VOLTS) 0.7 0.8 Figure 1. Reverse Leakage Figure 2. Forward Voltage 1.0 11 10 NF, NOISE FIGURE (dB) LOCAL OSCILLATOR FREQUENCY = 1.0 GHz (Test Circuit Figure 5) C, CAPACITANCE (pF) 0.9 9 8 7 6 5 4 3 MBD110DWT1 2 4.0 1 0.1 0.2 0.8 0.7 MBD110DWT1 0.5 1.0 2.0 5.0 PLO, LOCAL OSCILLATOR POWER (mW) 10 0.6 0 1.0 2.0 3.0 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Capacitance Figure 4. Noise Figure LOCAL OSCILLATOR NOTES ON TESTING AND SPECIFICATIONS Note 1 – CC and CT are measured using a capacitance bridge (Boonton Electronics Model 75A or equivalent). Note 2 – Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. Note 3 – LS is measured on a package having a short instead of a die, using an impedance bridge (Boonton Radio Model 250A RX Meter). UHF NOISE SOURCE H.P. 349A DIODE IN TUNED MOUNT NOISE FIGURE METER H.P. 342A IF AMPLIFIER NF = 1.5 dB f = 30 MHz Figure 5. Noise Figure Test Circuit Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MBD110DWT1 MBD330DWT1 MBD770DWT1 TYPICAL CHARACTERISTICS MBD330DWT1 2.8 CT, TOTAL CAPACITANCE (pF) 2.4 2.0 1.6 1.2 0.8 0.4 0 f = 1.0 MHz 500 t , MINORITY CARRIER LIFETIME (ps) MBD330DWT1 MBD330DWT1 400 KRAKAUER METHOD 300 200 100 0 0 3.0 6.0 18 9.0 12 15 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 0 10 20 40 60 30 50 70 IF, FORWARD CURRENT (mA) 80 90 100 Figure 6. Total Capacitance Figure 7. Minority Carrier Lifetime 10 MBD330DWT1 1.0 TA = 100°C TA = 75°C 0.1 TA = 25°C 100 MBD330DWT1 IF, FORWARD CURRENT (mA) TA = – 40°C 10 TA = 85°C IR, REVERSE LEAKAGE (m A) 1.0 TA = 25°C 0.01 0.001 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30 0.1 0.2 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 1.2 Figure 8. Reverse Leakage Figure 9. Forward Voltage 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data MBD110DWT1 MBD330DWT1 MBD770DWT1 TYPICAL CHARACTERISTICS MBD770DWT1 2.0 CT, TOTAL CAPACITANCE (pF) f = 1.0 MHz 1.6 500 MBD770DWT1 MBD770DWT1 400 KRAKAUER METHOD 300 1.2 t , MINORITY CARRIER LIFETIME (ps) 50 0.8 200 0.4 100 0 0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 0 10 20 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 Figure 10. Total Capacitance Figure 11. Minority Carrier Lifetime 10 MBD770DWT1 1.0 TA = 100°C TA = 75°C 0.1 100 MBD770DWT1 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE (m A) 10 TA = 85°C TA = – 40°C 1.0 TA = 25°C 0.01 TA = 25°C 0.001 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 50 0.1 0.2 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) 1.6 2.0 Figure 12. Reverse Leakage Figure 13. Forward Voltage Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 MBD110DWT1 MBD330DWT1 MBD770DWT1 INFORMATION FOR USING THE SOT–363 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. SOT–363 0.5 mm (min) 1.9 mm SOT–363 POWER DISSIPATION The power dissipation of the SOT–363 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–363 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 120 milliwatts. PD = 125°C – 25°C 833°C/W = 120 milliwatts The 833°C/W for the SOT–363 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 120 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–363 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad™. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. 6 Motorola Small–Signal Transistors, FETs and Diodes Device Data ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ 0.4 mm (min) SOLDERING PRECAUTIONS 0.65 mm 0.65 mm MBD110DWT1 MBD330DWT1 MBD770DWT1 PACKAGE DIMENSIONS A G V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 6 5 4 S 1 2 3 –B– D 6 PL 0.2 (0.008) M B M N J C DIM A B C D G H J K N S V INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC ––– 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC ––– 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40 STYLE 6: PIN 1. 2. 3. 4. 5. 6. ANODE 2 N/C CATHODE 1 ANODE 1 N/C CATHODE 2 H K CASE 419B-01 ISSUE C Motorola Small–Signal Transistors, FETs and Diodes Device Data 7 MBD110DWT1 MBD330DWT1 MBD770DWT1 Motorola reserves the right to make changes without further notice to any products herein. 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