MHL21336

MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MHL21336/D The RF Line 3G Band RF Linear LDMOS Amplifier Designed for ultra–linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems. • Third Order Intercept: 45 dBm Typ • Power Gain: 31 dB Typ (@ f = 2140 MHz) • Excellent Phase Linearity and Group Delay Characteristics • Ideal for Feedforward Base Station Applications MHL21336 2110–2170 MHz 3.0 W, 31 dB RF LINEAR LDMOS AMPLIFIER Freescale Semiconductor, Inc... CASE 301AP–02, STYLE 1 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating DC Supply Voltage RF Input Power Storage Temperature Range Operating Case Temperature Range Symbol VDD Pin Tstg TC Value 30 +5 –40 to +100 –20 to +100 Unit Vdc dBm °C °C ELECTRICAL CHARACTERISTICS (VDD = 26 Vdc, TC = 25°C; 50 Ω System) Characteristic Supply Current Power Gain Gain Flatness Power Output @ 1 dB Comp. Input VSWR (f = 2140 MHz) (f = 2110–2170 MHz) (f = 2140 MHz) (f = 2110–2170 MHz) Symbol IDD Gp GF Pout 1 dB VSWRin ITO NF Min — 30 — 34 — 44 — Typ 500 31 0.15 35 1.2:1 45 4.5 Max 525 32 0.4 — 1.5:1 — 5 dBm dB Unit mA dB dB dBm Third Order Intercept (f1 = 2137 MHz, f2 = 2142 MHz) Noise Figure (f = 2170 MHz) REV 3 MOTOROLA RF  Motorola, Inc. 2002 DEVICE DATA For More Information On This Product, Go to: www.freescale.com MHL21336 1 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 40 G p , POWER GAIN/RETURN LOSS (dB) 30 20 10 0 -10 -20 -30 -40 1400 1600 1800 2000 2200 2400 2600 2800 ORL IRL P1dB, ITO (dBm) 45 40 35 30 25 1800 P1dB Gp VDD = 26 Vdc TC = 25_C 55 50 ITO VDD = 26 Vdc TC = 25_C 1900 2000 2100 2200 2300 2400 2500 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Freescale Semiconductor, Inc... Figure 1. Power Gain, Input Return Loss, Output Return Loss versus Frequency Figure 2. P1dB, ITO versus Frequency 40 VDD = 26 Vdc f = 2140 MHz Gp 600 48 47 VDD = 26 Vdc f = 2140 MHz 38 37 36 35 G p , POWER GAIN (dB) 35 550 I DD (mA) ITO (dBm) ITO P1dB (dBm) PHASE LINEARITY ( _ ) 46 500 45 44 450 43 33 32 120 P1dB 30 IDD 34 25 20 -40 -20 0 20 40 60 80 100 400 120 42 -40 -20 0 20 40 60 80 100 TEMPERATURE (_C) TEMPERATURE (_C) Figure 3. Power Gain, IDD versus Temperature Figure 4. ITO, P1dB versus Temperature -1400 -1420 -1440 -1460 -1480 -1500 -40 GROUP DELAY VDD = 26 Vdc f = 2140 MHz 2.4 2.3 GROUP DELAY (nS) 2.2 2.1 2 1.9 120 0.6 0.5 0.4 0.3 0.2 PHASE LINEARITY 0.1 0 -40 GF VDD = 26 Vdc f = 2110 - 2170 MHz 0.6 0.5 0.4 0.3 0.2 0.1 0 120 PHASE -20 0 20 40 60 80 100 G F , GAIN FLATNESS (dB) PHASE ( _ ) -20 0 20 40 60 80 100 TEMPERATURE (_C) TEMPERATURE (_C) Figure 5. Phase(1), Group Delay(1) versus Temperature (1)In Production Test Fixture Figure 6. Gain Flatness, Phase Linearity versus Temperature MHL21336 2 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. 31.8 31.6 G p , POWER GAIN (dB) IDD 31.4 31.2 31 30.8 22 Gp 500 400 300 200 23 24 25 26 27 28 29 30 VOLTAGE (VOLTS) f = 2140 MHz TC = 25_C 700 600 I DD (mA) ITO (dBm) 47.5 47 46.5 46 P1dB ITO f = 2140 MHz TC = 25_C 37 36.5 P1dB (dBm) PHASE LINEARITY ( _ ) 36 35.5 35 34.5 34 23 24 25 26 27 28 29 30 VOLTAGE (VOLTS) 45.5 45 44.5 22 Figure 7. Power Gain, IDD versus Voltage Figure 8. ITO, P1dB versus Voltage Freescale Semiconductor, Inc... -1435 f = 2140 MHz TC = 25_C GROUP DELAY 2.3 0.35 0.3 f = 2110 - 2170 MHz TC = 25_C 0.35 0.3 0.25 GF 0.2 -1436 PHASE ( _ ) 2.25 -1437 PHASE -1438 2.2 GROUP DELAY (nS) G F , GAIN FLATNESS (dB) 0.25 0.2 0.15 0.1 PHASE LINEARITY 0.15 0.1 2.15 0.05 -1439 22 2.1 23 24 25 26 27 28 29 30 VOLTAGE (VOLTS) 0 22 23 24 25 26 27 28 29 30 0.05 0 VOLTAGE (VOLTS) Figure 9. Phase(1), (1)In Production Test Fixture Group Voltage Delay(1) versus Figure 10. Phase Linearity, Gain Flatness versus Voltage MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MHL21336 3 Freescale Semiconductor, Inc. PACKAGE DIMENSIONS A G 0.020 (0.51) M A S 2X Q 0.008 (0.20) M TS M A M TA M B R J K W 4X 1 2 3 4 S NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION "F" TO CENTER OF LEADS. DIM A B C D E F G H J K L N P Q R S W INCHES MIN MAX 1.760 1.780 1.370 1.390 0.245 0.265 0.017 0.023 0.080 0.100 0.086 BSC 1.650 BSC 1.290 BSC 0.266 0.280 0.125 0.165 0.990 BSC 0.390 BSC 0.008 0.013 0.118 0.132 0.535 0.555 0.445 0.465 0.090 BSC RF INPUT VDD1 VDD2 RF OUTPUT GROUND MILLIMETERS MIN MAX 44.70 45.21 34.80 35.31 6.22 6.73 0.43 0.58 2.03 2.54 2.18 BSC 41.91 BSC 32.77 BSC 6.76 7.11 3.18 4.19 25.15 BSC 9.91 BSC 0.20 0.33 3.00 3.35 13.59 14.10 11.30 11.81 2.29 BSC D M 0.020 (0.51) M TB N L H Freescale Semiconductor, Inc... F E T C 4X P 0.020 (0.51) M T SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. CASE: CASE 301AP–02 ISSUE C Motorola reserves the right to make changes without further notice to any products herein. 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All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MHL21336 4 F ◊ or More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA MHL21336/D