MHL9318

MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MHL9318/D The RF Line Cellular Band RF Linear LDMOS Amplifier Designed for ultra–linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for the most demanding analog or digital modulation systems, such as TDMA and CDMA. • Third Order Intercept: 49 dBm Typ • Power Gain: 17.5 dB Typ (@ f = 880 MHz) • Excellent Phase Linearity and Group Delay Characteristics • Ideal for Feedforward Base Station Applications • For Use in TDMA and CDMA Multi–Carrier Applications MHL9318 3.0 W, 17.5 dB 860–900 MHz RF LINEAR LDMOS AMPLIFIER Freescale Semiconductor, Inc... CASE 301AS–01, STYLE 1 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating DC Supply Voltage RF Input Power Storage Temperature Range Operating Case Temperature Range Symbol VDD Pin Tstg TC Value 30 +20 –40 to +100 –20 to +100 Unit Vdc dBm °C °C ELECTRICAL CHARACTERISTICS (VDD = 28 Vdc, TC = 25°C; 50 Ω System) Characteristic Supply Current Power Gain Gain Flatness Power Output @ 1 dB Comp. Input VSWR Output VSWR (f = 880 MHz) (f = 860–900 MHz) (f = 880 MHz) (f = 860–900 MHz) (f = 860–900 MHz) Symbol IDD Gp GF Pout 1 dB VSWRin VSWRout ITO NF Min — 17 — — — — 47 — Typ 500 17.5 0.1 35.5 1.2:1 1.2:1 49 3 Max 560 18.5 0.2 — 1.5:1 1.5:1 — 4.5 dBm dB Unit mA dB dB dBm Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz) Noise Figure (f = 960 MHz) REV 2 MOTOROLA RF  Motorola, Inc. 2002 DEVICE DATA For More Information On This Product, Go to: www.freescale.com MHL9318 1 Freescale Semiconductor, Inc. 40 POWER GAIN/RETURN LOSS (dB) 55 50 20 P1dB, ITO (dBm) Gp 0 ORL -20 IRL -40 400 TC = 25°C VDD = 28 V 1600 2000 45 40 35 30 25 500 ITO TC = 25°C VDD = 28 V P1dB 800 1200 f, FREQUENCY (MHz) 600 700 900 800 1000 f, FREQUENCY (MHz) 1100 1200 Freescale Semiconductor, Inc... Figure 1. Power Gain, Input Return Loss, Output Return Loss versus Frequency Figure 2. P1dB, ITO versus Frequency 20 19 G p , POWER GAIN (dB) 18 17 16 15 -40 f = 880 MHz VDD = 28 V Gp IDD 515 510 505 500 495 490 120 52 50 48 ITO (dBm) I DD (mA) 46 44 42 40 -40 f = 880 MHz VDD = 28 V -20 0 P1dB 20 40 60 TEMPERATURE (°C) 80 100 ITO 40 39 38 37 36 35 34 120 P1dB (dBm) PHASE LINEARITY( ° ) -20 0 40 20 60 TEMPERATURE (°C) 80 100 Figure 3. Power Gain, IDD versus Temperature Figure 4. ITO, P1dB versus Temperature -250 -255 -260 PHASE ( ° ) -265 PHASE GROUP DELAY f = 880 MHz VDD = 28 V 2.2 2.1 GROUP DELAY (nS) 2.0 1.9 1.8 1.7 1.6 120 0.30 0.25 G F , GAIN FLATNESS (dB) 0.20 0.15 0.10 PHASE LINEARITY 0.05 0 -40 GF -20 0 20 40 60 TEMPERATURE (°C) 80 100 f = 860-900 MHz VDD = 28 V 0.60 0.50 0.40 0.30 0.20 0.10 0 120 -270 -275 -280 -40 -20 0 20 40 60 TEMPERATURE (°C) 80 100 Figure 5. Phase(1), Group Delay(1) versus Temperature (1)In Production Test Fixture Figure 6. Gain Flatness, Phase Linearity versus Temperature MHL9318 2 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 18.0 17.8 G p , POWER GAIN (dB) 17.6 17.4 IDD 700 600 500 400 f = 880 MHz TC = 25°C 24 26 VOLTAGE (VOLTS) 28 300 200 30 52 50 48 46 44 42 22 f = 880 MHz TC = 25°C 24 26 VOLTAGE (VOLTS) 28 30 ITO P1dB 34 33 32 37 36 35 Gp 17.2 17.0 22 Freescale Semiconductor, Inc... Figure 7. Power Gain, IDD versus Voltage Figure 8. ITO, P1dB versus Voltage -260.5 -261.0 PHASE PHASE ( ° ) -261.5 -262.0 -262.5 -263.0 22 GROUP DELAY 1.91 1.90 1.89 1.88 1.87 1.86 30 PHASE LINEARITY( ° ) GROUP DELAY (nS) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 22 24 26 VOLTAGE (VOLTS) GF PHASE LINEARITY 0.08 0.07 0.06 0.05 0.04 0.03 f = 860-900 MHz TC = 25°C 28 30 0.02 0.01 G F , GAIN FLATNESS (dB) f = 880 MHz TC = 25°C 24 26 VOLTAGE (VOLTS) 28 Figure 9. Phase(1), Group Delay(1) versus Voltage (1)In Production Test Fixture Figure 10. Phase Linearity, Gain Flatness versus Voltage MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MHL9318 3 P1dB (dBm) ITO (dBm) I DD (mA) Freescale Semiconductor, Inc. PACKAGE DIMENSIONS 0.51 (0.020) M TA M –A– G –B– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION F TO CENTER OF LEADS. R J 1 2 3 –S– K 0.51 (0.020) M W D 3 PL TBM N H Q 2 PL 0.20 (0.008) F M Freescale Semiconductor, Inc... TS M A M E C SEATING PLANE DIM A B C D E F G H J K N P Q R S W INCHES MIN MAX 1.760 1.780 1.370 1.390 0.245 0.265 0.017 0.023 0.080 0.100 0.086 BSC 1.650 BSC 1.290 BSC 0.266 0.280 0.125 0.165 0.390 BSC 0.008 0.013 0.118 0.132 0.535 0.555 0.445 0.465 0.090 BSC RF INPUT VDD RF OUTPUT GROUND MILLIMETERS MIN MAX 44.70 45.21 34.80 35.31 6.22 6.73 0.43 0.58 2.03 2.54 2.18 BSC 41.91 BSC 32.77 BSC 6.76 7.11 3.18 4.19 9.91 BSC 0.20 0.33 3.00 3.35 13.59 14.10 11.30 11.81 2.29 BSC –T– P 3 PL 0.51 (0.020) M T STYLE 1: PIN 1. 2. 3. CASE: CASE 301AS–01 ISSUE A Motorola reserves the right to make changes without further notice to any products herein. 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MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MHL9318 4 MHL9318/D ◊For More Information On This Product,MOTOROLA RF DEVICE DATA Go to: www.freescale.com