MHPA21010

MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MHPA21010/D The RF Line UMTS Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems. • Typical W–CDMA Performance for VDD = 28 Volts, Vbias = 8 Volts, IDQ = 550 mA, Channel Bandwidth = 3.84 MHz, Adjacent Channels at ± 5 MHz, ACPR Measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF, 3GPP Test Model 1, 64 DTCH. • Adjacent Channel Power: –50 dBc @ 30 dBm, 5 MHz Channel Spacing • Power Gain: 23.7 dB Min (@ f = 2140 MHz) • Excellent Phase Linearity and Group Delay Characteristics • 0.2 dB Typical Gain Flatness • Ideal for Feedforward Base Station Applications MHPA21010 2110–2170 MHz 10 W, 23.7 dB RF HIGH POWER LDMOS AMPLIFIER Freescale Semiconductor, Inc... CASE 301AP–02, STYLE 3 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating DC Supply Voltage RF Input Power (Single Carrier CW) Storage Temperature Range Operating Case Temperature Range Quiescent Bias Current Symbol VDD Pin Tstg TC IDQ Value 30 +20 –40 to +100 –20 to +100 750 Unit Vdc dBm °C °C mA ELECTRICAL CHARACTERISTICS (VDD = 28 Vdc, VBIAS ≅ 8 V Set for Supply Current of 550 mA, TC = 25°C, 50 Ω System) Characteristic Supply Current Power Gain Gain Flatness Power Output @ 1 dB Comp. Input VSWR Noise Figure (f = 2140 MHz) (f = 2110–2170 MHz) (f = 2140 MHz) (f = 2110–2170 MHz) (f = 2140 MHz) Symbol IDD Gp GF P1dB VSWRin NF ACPR Min — 23.7 — — — — — Typ 550 25 0.2 41.5 1.5:1 — –55 Max — — 0.6 — 2:1 10 –50 dB dBc Unit mA dB dB dBm Adjacent Channel Power Rejection @ 30 dBm Avg., 3.84 MHz BW, 5 MHz Channel Spacing REV 2 MOTOROLA RF  Motorola, Inc. 2003 DEVICE DATA For More Information On This Product, Go to: www.freescale.com MHPA21010 1 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS IRL/ORL, INPUT/OUTPUT RETURN LOSS (dB) 20 15 10 5 0 -5 -10 -15 -20 2080 2100 2120 2140 2160 2180 VDD = 28 Vdc Pout = 5 W IDQ = 550 mA 10 MHz Tone Spacing Gps 28 27 26 25 24 ORL IRL 23 22 21 20 2200 30 28 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 26 24 22 20 18 2110 2120 2130 2140 2150 2160 η VDD = 28 Vdc Pout = 1 W (Avg.) IDQ = 550 mA 85_C 2-Carrier W-CDMA, 10 MHz Carrier Spacing BW = 3.84 MHz Carrier Bandwidth Gps 16 TC = -10_C 14 η, DRAIN EFFICIENCY (%) 40 G ps , POWER GAIN (dB) 25_C 12 85_C 10 8 -10_C 6 25_C 2170 4 16 2100 2 2180 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Freescale Semiconductor, Inc... Figure 1. Two–Tone Power Gain, Input Return Loss and Output Return Loss versus Frequency IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) Figure 2. 2–Carrier W–CDMA Power Gain and Efficiency versus Frequency IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -30 -35 -40 IM3 VDD = 28 Vdc Pout (Pin) = 1 W (Avg.) IDQ = 550 mA -10 TC = 85_C -20 -10_C -30 -40 -20 -25 -30 -35 -40 -45 -50 -55 -60 15 VDD = 28 Vdc, IDQ = 550 mA 100 kHz: f1 = 2139.95 MHz f2 = 2140.05 MHz 10 MHz: f1 = 2135 MHz f2 = 2145 MHz 2-Carrier W-CDMA, 10 MHz Carrier Spacing 3.84 MHz Carrier Bandwidth -45 ACPR @ 5 MHz, IM3 @ 10 MHz, Bandwidth = 3.84 MHz -50 25_C 85_C 100 kHz ACPR 2110 2120 2130 2140 2150 -10_C -50 25_C 2160 2170 -60 2180 -55 2100 10 MHz 20 25 30 35 f, FREQUENCY (MHz) Pout, OUTPUT POWER (WATTS) PEP Figure 3. 2–Carrier W–CDMA IM3 and ACPR versus Frequency IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) η, DRAIN EFFICIENCY (%), Pout , OUTPUT POWER (dBm) Figure 4. Two–Tone W–CDMA IM3 versus Output Power -20 -25 -30 -35 -40 -45 -50 -55 -60 15 20 550 mA 450 mA 25 30 VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz 35 40 IDQ = 750 mA 650 mA 48 40 32 24 16 8 0 Gps 26 25 24 Pout 23 22 VDD = 28 Vdc IDQ = 550 mA f = 2140 MHz 0 5 10 15 20 25 21 20 η -5 Pout, OUTPUT POWER (WATTS) PEP Pin, INPUT POWER (dBm) Figure 5. Third Order Intermodulation Distortion versus Output Power Figure 6. CW Output Power, Efficiency and Gain versus Input Power MHPA21010 2 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. -40 -45 IM3 (dBc), ACPR (dBc) -50 -55 -60 -65 IM3 ACPR η 5 10 15 20 25 30 Pout, OUTPUT POWER (dBm) VDD = 28 Vdc IDQ = 550 mA f1 = 2135 MHz f2 = 2145 MHz 10 8 6 4 2 0 35 Figure 7. 2–Carrier W–CDMA ACPR, IM3 and Efficiency versus Output Power Freescale Semiconductor, Inc... MOTOROLA RF DEVICE DATA η, DRAIN EFFICIENCY (%) For More Information On This Product, Go to: www.freescale.com MHPA21010 3 Freescale Semiconductor, Inc. PACKAGE DIMENSIONS A G 0.020 (0.51) M A S 2X Q 0.008 (0.20) M TS M A M TA M B R J K W 4X 1 2 3 4 S NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION "F" TO CENTER OF LEADS. DIM A B C D E F G H J K L N P Q R S W INCHES MIN MAX 1.760 1.780 1.370 1.390 0.245 0.265 0.017 0.023 0.080 0.100 0.086 BSC 1.650 BSC 1.290 BSC 0.266 0.280 0.125 0.165 0.990 BSC 0.390 BSC 0.008 0.013 0.118 0.132 0.535 0.555 0.445 0.465 0.090 BSC MILLIMETERS MIN MAX 44.70 45.21 34.80 35.31 6.22 6.73 0.43 0.58 2.03 2.54 2.18 BSC 41.91 BSC 32.77 BSC 6.76 7.11 3.18 4.19 25.15 BSC 9.91 BSC 0.20 0.33 3.00 3.35 13.59 14.10 11.30 11.81 2.29 BSC D M 0.020 (0.51) M TB N L H Freescale Semiconductor, Inc... F E T C 4X P 0.020 (0.51) M T SEATING PLANE STYLE 3: PIN 1. 2. 3. 4. CASE: RF INPUT VBIAS VDD RF OUTPUT GROUND CASE 301AP–02 ISSUE C NOTE: VDD (Pin 3) should always be applied before VBIAS (Pin 2). Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Motorola and the Stylized M Logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2003. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors MHPA21010 4 F ◊ or More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA MHPA21010/D